DE2640621C3 - Halbleiter-Schalteinrichtung - Google Patents

Halbleiter-Schalteinrichtung

Info

Publication number
DE2640621C3
DE2640621C3 DE2640621A DE2640621A DE2640621C3 DE 2640621 C3 DE2640621 C3 DE 2640621C3 DE 2640621 A DE2640621 A DE 2640621A DE 2640621 A DE2640621 A DE 2640621A DE 2640621 C3 DE2640621 C3 DE 2640621C3
Authority
DE
Germany
Prior art keywords
transistor
cathode
connection
emitter
pnpn switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2640621A
Other languages
German (de)
English (en)
Other versions
DE2640621A1 (de
DE2640621B2 (de
Inventor
Yoshikazu Hosokawa
Masayoshi Hitachi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2640621A1 publication Critical patent/DE2640621A1/de
Publication of DE2640621B2 publication Critical patent/DE2640621B2/de
Application granted granted Critical
Publication of DE2640621C3 publication Critical patent/DE2640621C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches

Landscapes

  • Electronic Switches (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
DE2640621A 1975-09-10 1976-09-09 Halbleiter-Schalteinrichtung Expired DE2640621C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50108968A JPS5233466A (en) 1975-09-10 1975-09-10 Semiconductor switch

Publications (3)

Publication Number Publication Date
DE2640621A1 DE2640621A1 (de) 1977-03-17
DE2640621B2 DE2640621B2 (de) 1981-07-09
DE2640621C3 true DE2640621C3 (de) 1982-03-18

Family

ID=14498214

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2640621A Expired DE2640621C3 (de) 1975-09-10 1976-09-09 Halbleiter-Schalteinrichtung

Country Status (4)

Country Link
US (1) US4063115A (enExample)
JP (1) JPS5233466A (enExample)
CA (1) CA1064108A (enExample)
DE (1) DE2640621C3 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474981A (en) * 1977-11-28 1979-06-15 Giichi Kuze Abnormality detecting and stop controller with preset counter
JPS5418664A (en) * 1977-07-13 1979-02-10 Hitachi Ltd Semiconductor switch
JPS5617067A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Semiconductor switch
EP0027888B1 (en) * 1979-09-21 1986-04-16 Hitachi, Ltd. Semiconductor switch
JPH0666421B2 (ja) * 1982-02-09 1994-08-24 ウエスタ−ン エレクトリツク カムパニ−，インコ−ポレ−テツド スイツチング装置
DE3230741A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter mit einem abschaltbaren thyristor
US4553041A (en) * 1983-08-22 1985-11-12 Motorola, Inc. Monolithic zero crossing triac driver
JPS60187120A (ja) * 1984-03-07 1985-09-24 Toshiba Corp 単安定マルチバイブレ−タ回路
JPS63181376A (ja) * 1987-01-23 1988-07-26 Toshiba Corp 半導体装置
US5686857A (en) * 1996-02-06 1997-11-11 Motorola, Inc. Zero-crossing triac and method
US6104045A (en) * 1998-05-13 2000-08-15 Micron Technology, Inc. High density planar SRAM cell using bipolar latch-up and gated diode breakdown
JP5540801B2 (ja) * 2010-03-19 2014-07-02 富士通セミコンダクター株式会社 Ｅｓｄ保護回路及び半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3549905A (en) * 1967-04-13 1970-12-22 Johnson Controls Inc Electronic oscillator switch
US3609413A (en) * 1969-11-03 1971-09-28 Fairchild Camera Instr Co Circuit for the protection of monolithic silicon-controlled rectifiers from false triggering
JPS5085266A (enExample) * 1973-11-28 1975-07-09

Also Published As

Publication number Publication date
JPS5626220B2 (enExample) 1981-06-17
DE2640621A1 (de) 1977-03-17
US4063115A (en) 1977-12-13
DE2640621B2 (de) 1981-07-09
JPS5233466A (en) 1977-03-14
AU1755676A (en) 1978-03-16
CA1064108A (en) 1979-10-09

Similar Documents

Publication Publication Date Title
EP0096944B1 (de) Schaltungsanordnung mit mehreren, durch aktive Schaltungen gebildeten Signalpfaden
DE1211334B (de) Halbleiterbauelement mit eingelassenen Zonen
DE19525237A1 (de) Pegelschieberschaltung
DE1537263A1 (de) Transistortreiberschaltung mit kapazitiver Rueckkopplung
DE2640621C3 (de) Halbleiter-Schalteinrichtung
DE2718696C3 (de) Halbleiterschalterkreis
DE3546524C2 (enExample)
DE3587924T2 (de) Schaltung zur Beschleunigung des Hoch-Tief-Überganges für TTL-Gatter.
EP0000169B1 (de) Halbleitersperrschichtkapazität in integrierter Bauweise und Bootstrap-Schaltung mit einer derartigen Halbleitersperrschichtkapazität
DE2558489C3 (enExample)
DE1286098B (de) Elektronische Relaisschaltung
DE2938122A1 (de) Transistorschaltkreis und verfahren zu dessen betrieb
EP1987591B1 (de) Schaltung zum schalten eines spannungsgesteuerten transistors
DE2712742A1 (de) Feldeffekt-transistorschaltkreis
DE1537185B2 (de) Amplitudenfilter
DE2637356C3 (de) Halbleiterschalter
DE2200580A1 (de) Vergleichsverstaerker mit Einzelzufuehrung
DE2752739C2 (de) Verstärker
DE3727948C2 (enExample)
DE2643935A1 (de) Halbleiter-schalteinrichtung
DE69220987T2 (de) Klemmschaltung
DE2148437B2 (de) Schaltungsanordnung zur verbesserung der kurzschlussfestigkeit von schaltkreisen vom typ der langsamen stoersicheren logik
EP0029920B1 (de) Integrierte Verzögerungsschaltung
DE2431523C3 (de) Halbleiter-Sprechweg-Schaltanordnung
DE3824694A1 (de) Halbleiterschaltung fuer schnelle schaltvorgaenge

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee