DE2627440C2 - Halbleiterschalteeinrichtung - Google Patents

Halbleiterschalteeinrichtung

Info

Publication number
DE2627440C2
DE2627440C2 DE2627440A DE2627440A DE2627440C2 DE 2627440 C2 DE2627440 C2 DE 2627440C2 DE 2627440 A DE2627440 A DE 2627440A DE 2627440 A DE2627440 A DE 2627440A DE 2627440 C2 DE2627440 C2 DE 2627440C2
Authority
DE
Germany
Prior art keywords
thyristor
transistor
control
current
control electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2627440A
Other languages
German (de)
English (en)
Other versions
DE2627440A1 (de
Inventor
Masahiko Amagasaki Hyogo Akamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE2627440A1 publication Critical patent/DE2627440A1/de
Application granted granted Critical
Publication of DE2627440C2 publication Critical patent/DE2627440C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/125—Modifications for increasing the maximum permissible switched current in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Electronic Switches (AREA)
DE2627440A 1975-06-18 1976-06-18 Halbleiterschalteeinrichtung Expired DE2627440C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50074688A JPS51150285A (en) 1975-06-18 1975-06-18 Transistor switch device

Publications (2)

Publication Number Publication Date
DE2627440A1 DE2627440A1 (de) 1976-12-23
DE2627440C2 true DE2627440C2 (de) 1986-01-30

Family

ID=13554394

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2627440A Expired DE2627440C2 (de) 1975-06-18 1976-06-18 Halbleiterschalteeinrichtung

Country Status (6)

Country Link
US (1) US4491742A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS51150285A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH616779A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2627440C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2316801A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE7606967L (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646122A (en) * 1983-03-11 1987-02-24 Hitachi, Ltd. Semiconductor device with floating remote gate turn-off means
US4651189A (en) * 1983-12-19 1987-03-17 Hitachi, Ltd. Semiconductor device provided with electrically floating control electrode
DE3705403A1 (de) * 1987-02-20 1988-09-01 Standard Elektrik Lorenz Ag Schaltung zur verstaerkung und formung eines wechselspannungssignals
US4894567A (en) * 1988-10-17 1990-01-16 Honeywell Inc. Active snubber circuit
US5436786A (en) * 1992-12-21 1995-07-25 Dairyland Electrical Industries, Inc. Isolator surge protector for DC isolation and AC grounding of cathodically protected systems
CA2183176C (en) * 1995-08-18 2000-10-24 Brian R. Pelly High power dc blocking device for ac and fault current grounding
US5856904A (en) * 1996-11-15 1999-01-05 Dairyland Electrical Industries, Inc. Voltage and current based control and triggering for isolator surge protector
JP3456120B2 (ja) * 1997-09-09 2003-10-14 三菱電機株式会社 レーザダイオード用電源制御装置
JP3456121B2 (ja) * 1997-09-09 2003-10-14 三菱電機株式会社 レーザダイオード用電源制御装置
JP3751561B2 (ja) 2000-04-25 2006-03-01 株式会社神戸製鋼所 オゾン水による食材類の洗浄装置及び該洗浄装置を用いる食材類の洗浄方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1103389B (de) * 1959-10-14 1961-03-30 Siemens Ag Schaltanordnung mit einer Vierschichthalbleiteranordnung
US3131311A (en) * 1960-06-21 1964-04-28 Bell Telephone Labor Inc Semiconductor pulse generators
DE1464960A1 (de) * 1963-09-03 1969-08-28 Gen Electric Halbleiter-Schalter
US3532903A (en) * 1967-09-15 1970-10-06 Sperry Rand Corp Solid state switch
US3694670A (en) * 1971-10-26 1972-09-26 Joseph M Marzolf Easily switched silicon controlled rectifier
JPS5254272Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-07-26 1977-12-08
US3938027A (en) * 1974-06-12 1976-02-10 Mitsubishi Denki Kabushiki Kaisha Electrical thyristor circuit

Also Published As

Publication number Publication date
DE2627440A1 (de) 1976-12-23
US4491742A (en) 1985-01-01
FR2316801B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-10-08
FR2316801A1 (fr) 1977-01-28
SE7606967L (sv) 1976-12-19
CH616779A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-04-15
JPS51150285A (en) 1976-12-23

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Legal Events

Date Code Title Description
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee