DE2612551A1 - Verfahren zur herstellung eines mittels licht steuerbaren halbleiter- gleichrichters - Google Patents

Verfahren zur herstellung eines mittels licht steuerbaren halbleiter- gleichrichters

Info

Publication number
DE2612551A1
DE2612551A1 DE19762612551 DE2612551A DE2612551A1 DE 2612551 A1 DE2612551 A1 DE 2612551A1 DE 19762612551 DE19762612551 DE 19762612551 DE 2612551 A DE2612551 A DE 2612551A DE 2612551 A1 DE2612551 A1 DE 2612551A1
Authority
DE
Germany
Prior art keywords
light
semiconductor body
main surface
electrode
reflecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19762612551
Other languages
German (de)
English (en)
Inventor
John S Roberts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/561,732 external-priority patent/US3991460A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of DE2612551A1 publication Critical patent/DE2612551A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
    • G02B6/2817—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using reflective elements to split or combine optical signals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Thyristors (AREA)
DE19762612551 1975-03-25 1976-03-24 Verfahren zur herstellung eines mittels licht steuerbaren halbleiter- gleichrichters Withdrawn DE2612551A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/561,732 US3991460A (en) 1973-08-29 1975-03-25 Method of making a light activated semiconductor controlled rectifier

Publications (1)

Publication Number Publication Date
DE2612551A1 true DE2612551A1 (de) 1976-10-07

Family

ID=24243197

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762612551 Withdrawn DE2612551A1 (de) 1975-03-25 1976-03-24 Verfahren zur herstellung eines mittels licht steuerbaren halbleiter- gleichrichters

Country Status (7)

Country Link
JP (1) JPS51122390A (enrdf_load_stackoverflow)
BE (1) BE839851A (enrdf_load_stackoverflow)
CA (1) CA1042534A (enrdf_load_stackoverflow)
DE (1) DE2612551A1 (enrdf_load_stackoverflow)
FR (1) FR2305856A1 (enrdf_load_stackoverflow)
GB (1) GB1500473A (enrdf_load_stackoverflow)
IN (1) IN143215B (enrdf_load_stackoverflow)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1339543A (fr) * 1962-06-08 1963-10-11 Europ Des Semi Conducteurs Soc Cellule photovoltaïque à haut rendement
US3487223A (en) * 1968-07-10 1969-12-30 Us Air Force Multiple internal reflection structure in a silicon detector which is obtained by sandblasting
US3590344A (en) * 1969-06-20 1971-06-29 Westinghouse Electric Corp Light activated semiconductor controlled rectifier
US3830665A (en) * 1972-12-07 1974-08-20 Motorola Inc Method for delineating semiconductor junctions

Also Published As

Publication number Publication date
JPS51122390A (en) 1976-10-26
CA1042534A (en) 1978-11-14
JPS5410838B2 (enrdf_load_stackoverflow) 1979-05-10
GB1500473A (en) 1978-02-08
FR2305856A1 (fr) 1976-10-22
IN143215B (enrdf_load_stackoverflow) 1977-10-15
BE839851A (fr) 1976-09-22

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination