CA1042534A - Method of making a light activated semiconductor controlled rectifier - Google Patents

Method of making a light activated semiconductor controlled rectifier

Info

Publication number
CA1042534A
CA1042534A CA246,903A CA246903A CA1042534A CA 1042534 A CA1042534 A CA 1042534A CA 246903 A CA246903 A CA 246903A CA 1042534 A CA1042534 A CA 1042534A
Authority
CA
Canada
Prior art keywords
major surface
light radiation
light
solution
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA246,903A
Other languages
English (en)
French (fr)
Inventor
John S. Roberts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/561,732 external-priority patent/US3991460A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of CA1042534A publication Critical patent/CA1042534A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
    • G02B6/2817—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using reflective elements to split or combine optical signals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Thyristors (AREA)
CA246,903A 1975-03-25 1976-03-02 Method of making a light activated semiconductor controlled rectifier Expired CA1042534A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/561,732 US3991460A (en) 1973-08-29 1975-03-25 Method of making a light activated semiconductor controlled rectifier

Publications (1)

Publication Number Publication Date
CA1042534A true CA1042534A (en) 1978-11-14

Family

ID=24243197

Family Applications (1)

Application Number Title Priority Date Filing Date
CA246,903A Expired CA1042534A (en) 1975-03-25 1976-03-02 Method of making a light activated semiconductor controlled rectifier

Country Status (7)

Country Link
JP (1) JPS51122390A (enrdf_load_stackoverflow)
BE (1) BE839851A (enrdf_load_stackoverflow)
CA (1) CA1042534A (enrdf_load_stackoverflow)
DE (1) DE2612551A1 (enrdf_load_stackoverflow)
FR (1) FR2305856A1 (enrdf_load_stackoverflow)
GB (1) GB1500473A (enrdf_load_stackoverflow)
IN (1) IN143215B (enrdf_load_stackoverflow)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1339543A (fr) * 1962-06-08 1963-10-11 Europ Des Semi Conducteurs Soc Cellule photovoltaïque à haut rendement
US3487223A (en) * 1968-07-10 1969-12-30 Us Air Force Multiple internal reflection structure in a silicon detector which is obtained by sandblasting
US3590344A (en) * 1969-06-20 1971-06-29 Westinghouse Electric Corp Light activated semiconductor controlled rectifier
US3830665A (en) * 1972-12-07 1974-08-20 Motorola Inc Method for delineating semiconductor junctions

Also Published As

Publication number Publication date
JPS51122390A (en) 1976-10-26
JPS5410838B2 (enrdf_load_stackoverflow) 1979-05-10
GB1500473A (en) 1978-02-08
DE2612551A1 (de) 1976-10-07
FR2305856A1 (fr) 1976-10-22
IN143215B (enrdf_load_stackoverflow) 1977-10-15
BE839851A (fr) 1976-09-22

Similar Documents

Publication Publication Date Title
US3293513A (en) Semiconductor radiant diode
CA1062799A (en) Solar cell device having improved efficiency
US4322253A (en) Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment
US4516314A (en) Method of making a high intensity solar cell
EP0051669B1 (en) Semiconductor fabrication utilizing laser radiation
US4371406A (en) Solid-state device
US3988771A (en) Spatial control of lifetime in semiconductor device
US4690714A (en) Method of making active solid state devices
US3991460A (en) Method of making a light activated semiconductor controlled rectifier
US3920495A (en) Method of forming reflective means in a light activated semiconductor controlled rectifier
US3590344A (en) Light activated semiconductor controlled rectifier
US4443493A (en) Laser induced flow glass materials
US12125933B2 (en) Method for manufacturing a uv-radiation detector device based on sic, and uv- radiation detector device based on sic
US4343832A (en) Semiconductor devices by laser enhanced diffusion
US6218682B1 (en) Optically controlled thyristor
GB2038092A (en) Reducing the switching time of semiconductor devices by neutron irradiation
US4137100A (en) Forming isolation and device regions due to enhanced diffusion of impurities in semiconductor material by laser
CA1042534A (en) Method of making a light activated semiconductor controlled rectifier
CN107039256B (zh) 用于热退火的方法以及通过该方法形成的半导体器件
US4677740A (en) Forming monolithic planar opto-isolators by selective implantation and proton bombardment
US3636354A (en) Near-infrared detector employing cadmium tin phosphide
US4431900A (en) Laser induced flow Ge-O based materials
JPH0248147B2 (enrdf_load_stackoverflow)
JPS60178673A (ja) アバランシフオトダイオ−ド
US3988768A (en) Deep diode silicon controlled rectifier