DE2520556A1 - Verfahren zum selektiven entfernen von material von der oberflaeche eines werkstueckes - Google Patents

Verfahren zum selektiven entfernen von material von der oberflaeche eines werkstueckes

Info

Publication number
DE2520556A1
DE2520556A1 DE19752520556 DE2520556A DE2520556A1 DE 2520556 A1 DE2520556 A1 DE 2520556A1 DE 19752520556 DE19752520556 DE 19752520556 DE 2520556 A DE2520556 A DE 2520556A DE 2520556 A1 DE2520556 A1 DE 2520556A1
Authority
DE
Germany
Prior art keywords
workpiece
axis
ion current
munich
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19752520556
Other languages
German (de)
English (en)
Inventor
Paul David Cruzan
Thomas Charles Tisone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2520556A1 publication Critical patent/DE2520556A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE19752520556 1974-05-10 1975-05-09 Verfahren zum selektiven entfernen von material von der oberflaeche eines werkstueckes Withdrawn DE2520556A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/468,813 US3943047A (en) 1974-05-10 1974-05-10 Selective removal of material by sputter etching

Publications (1)

Publication Number Publication Date
DE2520556A1 true DE2520556A1 (de) 1975-11-20

Family

ID=23861343

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752520556 Withdrawn DE2520556A1 (de) 1974-05-10 1975-05-09 Verfahren zum selektiven entfernen von material von der oberflaeche eines werkstueckes

Country Status (8)

Country Link
US (1) US3943047A (https=)
JP (1) JPS50152937A (https=)
CA (1) CA1032450A (https=)
DE (1) DE2520556A1 (https=)
FR (1) FR2270678B1 (https=)
GB (1) GB1499847A (https=)
IT (1) IT1032833B (https=)
NL (1) NL7505474A (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS604652Y2 (ja) * 1976-04-06 1985-02-12 株式会社島津製作所 イオンエツチング装置
US4238312A (en) * 1979-07-23 1980-12-09 International Business Machines Corporation Sputtering system for optimizing quartz deposition uniformity
US4278493A (en) * 1980-04-28 1981-07-14 International Business Machines Corporation Method for cleaning surfaces by ion milling
US4309267A (en) * 1980-07-21 1982-01-05 Bell Telephone Laboratories, Incorporated Reactive sputter etching apparatus
GB8319716D0 (en) * 1983-07-21 1983-08-24 Secr Defence Reactive ion etching
GB2148769A (en) * 1983-10-22 1985-06-05 Standard Telephones Cables Ltd Topographic feature formation by ion beam milling of a substrate
US5238532A (en) * 1992-02-27 1993-08-24 Hughes Aircraft Company Method and apparatus for removal of subsurface damage in semiconductor materials by plasma etching
US5376224A (en) * 1992-02-27 1994-12-27 Hughes Aircraft Company Method and apparatus for non-contact plasma polishing and smoothing of uniformly thinned substrates
KR19990028592A (ko) * 1995-06-30 1999-04-15 와이너 길버트 피. 분리장치 및 방법
US5656535A (en) * 1996-03-04 1997-08-12 Siemens Aktiengesellschaft Storage node process for deep trench-based DRAM
US7360299B2 (en) * 2005-03-31 2008-04-22 Hitachi Global Storage Technologies Netherlands B. V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
US7672090B2 (en) * 2005-03-31 2010-03-02 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
US7360300B2 (en) * 2005-03-31 2008-04-22 Hitachi Global Storage Technologies Netherlands B.V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer
US7460343B2 (en) * 2005-03-31 2008-12-02 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
US7363699B2 (en) * 2005-03-31 2008-04-29 Hitachi Global Storage Technologies Netherlands B. V. Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
US7382586B2 (en) * 2005-03-31 2008-06-03 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer
US7457085B2 (en) 2005-03-31 2008-11-25 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
US8084346B1 (en) * 2010-10-20 2011-12-27 International Business Machines Corporation Replacement metal gate method
US10002764B1 (en) 2016-12-16 2018-06-19 Varian Semiconductor Equipment Associates, Inc. Sputter etch material selectivity
US11053580B2 (en) 2018-02-21 2021-07-06 Varian Semiconductor Equipment Associates, Inc. Techniques for selective deposition using angled ions
CN113658855A (zh) * 2020-05-12 2021-11-16 江苏鲁汶仪器有限公司 一种侧壁金属的刻蚀方法及其应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325393A (en) * 1964-05-28 1967-06-13 Gen Electric Electrical discharge cleaning and coating process
US3526584A (en) * 1964-09-25 1970-09-01 Western Electric Co Method of providing a field free region above a substrate during sputter-depositing thereon
US3410775A (en) * 1966-04-14 1968-11-12 Bell Telephone Labor Inc Electrostatic control of electron movement in cathode sputtering
US3361659A (en) * 1967-08-14 1968-01-02 Ibm Process of depositing thin films by cathode sputtering using a controlled grid
FR1594542A (https=) * 1967-12-22 1970-06-08
US3558351A (en) * 1968-12-19 1971-01-26 Bell Telephone Labor Inc Thin semiconductor films
FR2082505A5 (https=) * 1970-03-18 1971-12-10 Radiotechnique Compelec
US3699034A (en) * 1971-03-15 1972-10-17 Sperry Rand Corp Method for sputter depositing dielectric materials
US3820994A (en) * 1972-06-07 1974-06-28 Westinghouse Electric Corp Penetration of polyimide films

Also Published As

Publication number Publication date
FR2270678B1 (https=) 1978-03-17
US3943047A (en) 1976-03-09
FR2270678A1 (https=) 1975-12-05
CA1032450A (en) 1978-06-06
JPS50152937A (https=) 1975-12-09
IT1032833B (it) 1979-06-20
GB1499847A (en) 1978-02-01
NL7505474A (nl) 1975-11-12

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination