IT1032833B - Procedimento per l incisione selettiva di superfici particolarmente di semiconduttori mediante polverizzazione catodica - Google Patents
Procedimento per l incisione selettiva di superfici particolarmente di semiconduttori mediante polverizzazione catodicaInfo
- Publication number
- IT1032833B IT1032833B IT68173/75A IT6817375A IT1032833B IT 1032833 B IT1032833 B IT 1032833B IT 68173/75 A IT68173/75 A IT 68173/75A IT 6817375 A IT6817375 A IT 6817375A IT 1032833 B IT1032833 B IT 1032833B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductors
- procedure
- surfaces particularly
- selective engraving
- cathodic pulverization
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/468,813 US3943047A (en) | 1974-05-10 | 1974-05-10 | Selective removal of material by sputter etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1032833B true IT1032833B (it) | 1979-06-20 |
Family
ID=23861343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT68173/75A IT1032833B (it) | 1974-05-10 | 1975-05-07 | Procedimento per l incisione selettiva di superfici particolarmente di semiconduttori mediante polverizzazione catodica |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3943047A (https=) |
| JP (1) | JPS50152937A (https=) |
| CA (1) | CA1032450A (https=) |
| DE (1) | DE2520556A1 (https=) |
| FR (1) | FR2270678B1 (https=) |
| GB (1) | GB1499847A (https=) |
| IT (1) | IT1032833B (https=) |
| NL (1) | NL7505474A (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS604652Y2 (ja) * | 1976-04-06 | 1985-02-12 | 株式会社島津製作所 | イオンエツチング装置 |
| US4238312A (en) * | 1979-07-23 | 1980-12-09 | International Business Machines Corporation | Sputtering system for optimizing quartz deposition uniformity |
| US4278493A (en) * | 1980-04-28 | 1981-07-14 | International Business Machines Corporation | Method for cleaning surfaces by ion milling |
| US4309267A (en) * | 1980-07-21 | 1982-01-05 | Bell Telephone Laboratories, Incorporated | Reactive sputter etching apparatus |
| GB8319716D0 (en) * | 1983-07-21 | 1983-08-24 | Secr Defence | Reactive ion etching |
| GB2148769A (en) * | 1983-10-22 | 1985-06-05 | Standard Telephones Cables Ltd | Topographic feature formation by ion beam milling of a substrate |
| US5238532A (en) * | 1992-02-27 | 1993-08-24 | Hughes Aircraft Company | Method and apparatus for removal of subsurface damage in semiconductor materials by plasma etching |
| US5376224A (en) * | 1992-02-27 | 1994-12-27 | Hughes Aircraft Company | Method and apparatus for non-contact plasma polishing and smoothing of uniformly thinned substrates |
| KR19990028592A (ko) * | 1995-06-30 | 1999-04-15 | 와이너 길버트 피. | 분리장치 및 방법 |
| US5656535A (en) * | 1996-03-04 | 1997-08-12 | Siemens Aktiengesellschaft | Storage node process for deep trench-based DRAM |
| US7360299B2 (en) * | 2005-03-31 | 2008-04-22 | Hitachi Global Storage Technologies Netherlands B. V. | Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer |
| US7672090B2 (en) * | 2005-03-31 | 2010-03-02 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer |
| US7360300B2 (en) * | 2005-03-31 | 2008-04-22 | Hitachi Global Storage Technologies Netherlands B.V. | Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer |
| US7460343B2 (en) * | 2005-03-31 | 2008-12-02 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer |
| US7363699B2 (en) * | 2005-03-31 | 2008-04-29 | Hitachi Global Storage Technologies Netherlands B. V. | Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers |
| US7382586B2 (en) * | 2005-03-31 | 2008-06-03 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer |
| US7457085B2 (en) | 2005-03-31 | 2008-11-25 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers |
| US8084346B1 (en) * | 2010-10-20 | 2011-12-27 | International Business Machines Corporation | Replacement metal gate method |
| US10002764B1 (en) | 2016-12-16 | 2018-06-19 | Varian Semiconductor Equipment Associates, Inc. | Sputter etch material selectivity |
| US11053580B2 (en) | 2018-02-21 | 2021-07-06 | Varian Semiconductor Equipment Associates, Inc. | Techniques for selective deposition using angled ions |
| CN113658855A (zh) * | 2020-05-12 | 2021-11-16 | 江苏鲁汶仪器有限公司 | 一种侧壁金属的刻蚀方法及其应用 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3325393A (en) * | 1964-05-28 | 1967-06-13 | Gen Electric | Electrical discharge cleaning and coating process |
| US3526584A (en) * | 1964-09-25 | 1970-09-01 | Western Electric Co | Method of providing a field free region above a substrate during sputter-depositing thereon |
| US3410775A (en) * | 1966-04-14 | 1968-11-12 | Bell Telephone Labor Inc | Electrostatic control of electron movement in cathode sputtering |
| US3361659A (en) * | 1967-08-14 | 1968-01-02 | Ibm | Process of depositing thin films by cathode sputtering using a controlled grid |
| FR1594542A (https=) * | 1967-12-22 | 1970-06-08 | ||
| US3558351A (en) * | 1968-12-19 | 1971-01-26 | Bell Telephone Labor Inc | Thin semiconductor films |
| FR2082505A5 (https=) * | 1970-03-18 | 1971-12-10 | Radiotechnique Compelec | |
| US3699034A (en) * | 1971-03-15 | 1972-10-17 | Sperry Rand Corp | Method for sputter depositing dielectric materials |
| US3820994A (en) * | 1972-06-07 | 1974-06-28 | Westinghouse Electric Corp | Penetration of polyimide films |
-
1974
- 1974-05-10 US US05/468,813 patent/US3943047A/en not_active Expired - Lifetime
- 1974-12-19 CA CA216,413A patent/CA1032450A/en not_active Expired
-
1975
- 1975-05-06 JP JP50054166A patent/JPS50152937A/ja active Pending
- 1975-05-07 IT IT68173/75A patent/IT1032833B/it active
- 1975-05-09 NL NL7505474A patent/NL7505474A/xx not_active Application Discontinuation
- 1975-05-09 GB GB19651/75A patent/GB1499847A/en not_active Expired
- 1975-05-09 DE DE19752520556 patent/DE2520556A1/de not_active Withdrawn
- 1975-05-09 FR FR7514538A patent/FR2270678B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2520556A1 (de) | 1975-11-20 |
| FR2270678B1 (https=) | 1978-03-17 |
| US3943047A (en) | 1976-03-09 |
| FR2270678A1 (https=) | 1975-12-05 |
| CA1032450A (en) | 1978-06-06 |
| JPS50152937A (https=) | 1975-12-09 |
| GB1499847A (en) | 1978-02-01 |
| NL7505474A (nl) | 1975-11-12 |
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