DE2404645A1 - Strahlungsmess- bzw. detektoreinrichtung - Google Patents
Strahlungsmess- bzw. detektoreinrichtungInfo
- Publication number
- DE2404645A1 DE2404645A1 DE2404645A DE2404645A DE2404645A1 DE 2404645 A1 DE2404645 A1 DE 2404645A1 DE 2404645 A DE2404645 A DE 2404645A DE 2404645 A DE2404645 A DE 2404645A DE 2404645 A1 DE2404645 A1 DE 2404645A1
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- photocell
- film layer
- electrically conductive
- conductive thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005855 radiation Effects 0.000 title claims description 10
- 239000010409 thin film Substances 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 20
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- YYKKIWDAYRDHBY-UHFFFAOYSA-N [In]=S.[Zn] Chemical compound [In]=S.[Zn] YYKKIWDAYRDHBY-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000031700 light absorption Effects 0.000 claims description 2
- 230000035699 permeability Effects 0.000 claims 1
- 238000005299 abrasion Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- UKUVVAMSXXBMRX-UHFFFAOYSA-N 2,4,5-trithia-1,3-diarsabicyclo[1.1.1]pentane Chemical compound S1[As]2S[As]1S2 UKUVVAMSXXBMRX-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- YPMOSINXXHVZIL-UHFFFAOYSA-N sulfanylideneantimony Chemical compound [Sb]=S YPMOSINXXHVZIL-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US39730873A | 1973-09-14 | 1973-09-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2404645A1 true DE2404645A1 (de) | 1975-03-27 |
Family
ID=23570683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2404645A Withdrawn DE2404645A1 (de) | 1973-09-14 | 1974-01-31 | Strahlungsmess- bzw. detektoreinrichtung |
Country Status (9)
| Country | Link |
|---|---|
| JP (2) | JPS5057482A (enrdf_load_stackoverflow) |
| BE (1) | BE810459A (enrdf_load_stackoverflow) |
| CA (1) | CA1022659A (enrdf_load_stackoverflow) |
| CH (1) | CH575659A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2404645A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2246075B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1457343A (enrdf_load_stackoverflow) |
| IT (1) | IT1002816B (enrdf_load_stackoverflow) |
| NL (1) | NL7401317A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2652608C3 (de) * | 1976-11-19 | 1979-12-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Anordnung zur Regelung der Ausgangsleistung eines Halbleiterlasers |
| JPS5734535A (en) * | 1980-08-12 | 1982-02-24 | Mamiya Koki Kk | Photometric method in camera |
| JPS6032031A (ja) * | 1983-08-03 | 1985-02-19 | Canon Inc | 撮影装置 |
| JPS60167534A (ja) * | 1984-02-10 | 1985-08-30 | Fujitsu Ltd | 光分岐・光電変換器 |
| US4745426A (en) * | 1985-10-04 | 1988-05-17 | Canon Kabushiki Kaisha | Light measuring device for a camera |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4125387Y1 (enrdf_load_stackoverflow) * | 1964-10-09 | 1966-12-27 | ||
| JPS4826981A (enrdf_load_stackoverflow) * | 1971-07-23 | 1973-04-09 |
-
1974
- 1974-01-31 BE BE140425A patent/BE810459A/xx not_active IP Right Cessation
- 1974-01-31 CA CA191,422A patent/CA1022659A/en not_active Expired
- 1974-01-31 JP JP49012284A patent/JPS5057482A/ja active Pending
- 1974-01-31 NL NL7401317A patent/NL7401317A/xx active Search and Examination
- 1974-01-31 CH CH131174A patent/CH575659A5/xx not_active IP Right Cessation
- 1974-01-31 DE DE2404645A patent/DE2404645A1/de not_active Withdrawn
- 1974-01-31 FR FR7403263A patent/FR2246075B1/fr not_active Expired
- 1974-01-31 GB GB454774A patent/GB1457343A/en not_active Expired
- 1974-01-31 IT IT48063/74A patent/IT1002816B/it active
-
1982
- 1982-08-10 JP JP1982120666U patent/JPS5860243U/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5057482A (enrdf_load_stackoverflow) | 1975-05-19 |
| BE810459A (fr) | 1974-07-31 |
| JPS5860243U (ja) | 1983-04-23 |
| GB1457343A (en) | 1976-12-01 |
| FR2246075B1 (enrdf_load_stackoverflow) | 1978-01-06 |
| NL7401317A (nl) | 1975-03-18 |
| IT1002816B (it) | 1976-05-20 |
| CH575659A5 (enrdf_load_stackoverflow) | 1976-05-14 |
| FR2246075A1 (enrdf_load_stackoverflow) | 1975-04-25 |
| CA1022659A (en) | 1977-12-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OGA | New person/name/address of the applicant | ||
| 8110 | Request for examination paragraph 44 | ||
| 8139 | Disposal/non-payment of the annual fee |