DE2361171A1 - Halbleitervorrichtung - Google Patents
HalbleitervorrichtungInfo
- Publication number
- DE2361171A1 DE2361171A1 DE2361171A DE2361171A DE2361171A1 DE 2361171 A1 DE2361171 A1 DE 2361171A1 DE 2361171 A DE2361171 A DE 2361171A DE 2361171 A DE2361171 A DE 2361171A DE 2361171 A1 DE2361171 A1 DE 2361171A1
- Authority
- DE
- Germany
- Prior art keywords
- junction
- film
- semiconductor device
- layer
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47122517A JPS4979782A (enrdf_load_stackoverflow) | 1972-12-08 | 1972-12-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2361171A1 true DE2361171A1 (de) | 1974-06-27 |
Family
ID=14837798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2361171A Pending DE2361171A1 (de) | 1972-12-08 | 1973-12-07 | Halbleitervorrichtung |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS4979782A (enrdf_load_stackoverflow) |
| DE (1) | DE2361171A1 (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3490241T1 (de) * | 1983-05-16 | 1985-05-15 | Sony Corp., Tokio/Tokyo | Halbleitervorrichtung |
| DE3542166A1 (de) * | 1985-11-29 | 1987-06-04 | Telefunken Electronic Gmbh | Halbleiterbauelement |
| FR2650122A1 (fr) * | 1989-07-21 | 1991-01-25 | Motorola Semiconducteurs | Dispositif semi-conducteur a haute tension et son procede de fabrication |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5187115A (en) | 1977-12-05 | 1993-02-16 | Plasma Physics Corp. | Method of forming semiconducting materials and barriers using a dual enclosure apparatus |
| JPS567463A (en) * | 1979-06-29 | 1981-01-26 | Hitachi Ltd | Semiconductor device and its manufacture |
| JPS59161864A (ja) * | 1983-03-04 | 1984-09-12 | Fujitsu Ltd | 半導体装置 |
| KR890004495B1 (ko) * | 1984-11-29 | 1989-11-06 | 가부시끼가이샤 도오시바 | 반도체 장치 |
-
1972
- 1972-12-08 JP JP47122517A patent/JPS4979782A/ja active Pending
-
1973
- 1973-12-07 DE DE2361171A patent/DE2361171A1/de active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3490241T1 (de) * | 1983-05-16 | 1985-05-15 | Sony Corp., Tokio/Tokyo | Halbleitervorrichtung |
| DE3542166A1 (de) * | 1985-11-29 | 1987-06-04 | Telefunken Electronic Gmbh | Halbleiterbauelement |
| US4879586A (en) * | 1985-11-29 | 1989-11-07 | Telefunken Electronic Gmbh | Semiconductor component |
| FR2650122A1 (fr) * | 1989-07-21 | 1991-01-25 | Motorola Semiconducteurs | Dispositif semi-conducteur a haute tension et son procede de fabrication |
| EP0408868A3 (en) * | 1989-07-21 | 1991-03-20 | Motorola Semiconducteurs S.A. | High voltage semiconductor device and fabrication process |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4979782A (enrdf_load_stackoverflow) | 1974-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |