DE2356170A1 - Siliziumhalbleitervorrichtung - Google Patents

Siliziumhalbleitervorrichtung

Info

Publication number
DE2356170A1
DE2356170A1 DE2356170A DE2356170A DE2356170A1 DE 2356170 A1 DE2356170 A1 DE 2356170A1 DE 2356170 A DE2356170 A DE 2356170A DE 2356170 A DE2356170 A DE 2356170A DE 2356170 A1 DE2356170 A1 DE 2356170A1
Authority
DE
Germany
Prior art keywords
silicon
insulating layer
semiconductor device
conditioning
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2356170A
Other languages
German (de)
English (en)
Inventor
Yiu Chung Cheng
Douglas Roy Colton
Rudolph John Kriegler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Electric Co Ltd filed Critical Northern Electric Co Ltd
Publication of DE2356170A1 publication Critical patent/DE2356170A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
DE2356170A 1972-11-10 1973-11-09 Siliziumhalbleitervorrichtung Pending DE2356170A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US30560172A 1972-11-10 1972-11-10

Publications (1)

Publication Number Publication Date
DE2356170A1 true DE2356170A1 (de) 1974-05-22

Family

ID=23181491

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2356170A Pending DE2356170A1 (de) 1972-11-10 1973-11-09 Siliziumhalbleitervorrichtung

Country Status (4)

Country Link
JP (1) JPS4996674A (cs)
DE (1) DE2356170A1 (cs)
FR (1) FR2206582A1 (cs)
NL (1) NL7315136A (cs)

Also Published As

Publication number Publication date
JPS4996674A (cs) 1974-09-12
FR2206582A1 (en) 1974-06-07
NL7315136A (cs) 1974-05-14

Similar Documents

Publication Publication Date Title
DE3779556T2 (de) Nach der oxidation auszufuehrendes verguetungsverfahren fuer siliziumdioxid.
DE3853668T2 (de) Verfahren zum Herstellen einer Halbleiteranordnung mit einem Oxid niedriger Fehlerdichte.
DE10392870B4 (de) Verfahren zur Herstellung einer Halbleitervorrichtung und Halbleitervorrichtung
DE69838532T2 (de) Plasmanitridierung eines Siliziumoxidfilms
EP0087581B1 (de) Verfahren zur Herstellung von Siliziumoxidschichten
DE69329233T2 (de) Wärmebehandlung einer halbleiterscheibe
DE2425382C2 (de) Verfahren zur Herstellung von Isolierschicht-Feldeffekttransistoren
DE19611043B4 (de) Verfahren zum Herstellen eines Siliciumwafers, Verfahren zum Bilden eines Siliciumwafers und Verfahren zur Herstellung eines Halbleiterbauelements
DE3132905C2 (cs)
DE19627017A1 (de) Verfahren zur selektiven Ablagerung eines Metallfilms
DE69518418T2 (de) Verfahren zur herstellung einer struktur mit niedrigen konzentrationsdefekten mit einer in einem halbleitersubstrat begrabenen oxydschicht
DE1589810A1 (de) Halbleiterbauelement
DE3925070C2 (de) Verfahren zum Erhalt einer sauberen Siliziumoberfläche
DE19824192B4 (de) Quartzglas, Verfahren zu seiner Herstellung und Verwendung
EP0013711B1 (de) Verfahren zum Ätzen von Chrom
DE1564963B2 (de) Verfahren zum herstellen eines stabilisierten halbleiter bauelements
DE1913718C2 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE19751784A1 (de) Verfahren zum Herstellen einer Barriereschicht
EP1382062A2 (de) Verfahren zur minimierung der wolframoxidausdampfung bei der selektiven seitenwandoxidation von wolfram-silizium-gates
DE2356170A1 (de) Siliziumhalbleitervorrichtung
DE102006025342B4 (de) Halbleitervorrichtung mit isoliertem Gate und Herstellungsverfahren dafür
DE69029014T2 (de) Verfahren und Vorrichtung zur Oberflächenbehandlung
DE60005541T2 (de) Verfahren zur Kontrollierung von Zwischenoxyd bei einer monokristallinischen/polykristallinischen Silizium-Zwischenschicht
EP0912995B1 (de) Halbleiterbauelement mit niedrigem kontaktwiderstand zu hochdotierten gebieten
DE3852543T2 (de) Dünne dielektrische Schicht auf einem Substrat und Verfahren zu deren Herstellung.

Legal Events

Date Code Title Description
OHJ Non-payment of the annual fee