DE2351254C3 - Verfahren zum Herstellen einer Multidioden-Speicherplatte für eine Bildaufnahmeröhre - Google Patents
Verfahren zum Herstellen einer Multidioden-Speicherplatte für eine BildaufnahmeröhreInfo
- Publication number
- DE2351254C3 DE2351254C3 DE2351254A DE2351254A DE2351254C3 DE 2351254 C3 DE2351254 C3 DE 2351254C3 DE 2351254 A DE2351254 A DE 2351254A DE 2351254 A DE2351254 A DE 2351254A DE 2351254 C3 DE2351254 C3 DE 2351254C3
- Authority
- DE
- Germany
- Prior art keywords
- layer
- resistance layer
- storage disk
- cadmium telluride
- final resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003860 storage Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 14
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 13
- 229910052735 hafnium Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- -1 hafnium nitride Chemical class 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 2
- 238000005496 tempering Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000889 atomisation Methods 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 239000012300 argon atmosphere Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000003847 radiation curing Methods 0.000 description 2
- 238000005510 radiation hardening Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229940007424 antimony trisulfide Drugs 0.000 description 1
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/026—Mounting or supporting arrangements for charge storage screens not deposited on the frontplate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Light Receiving Elements (AREA)
- Physical Vapour Deposition (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00297715A US3830717A (en) | 1972-10-16 | 1972-10-16 | Semiconductor camera tube target |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2351254A1 DE2351254A1 (de) | 1974-04-25 |
| DE2351254B2 DE2351254B2 (de) | 1979-06-28 |
| DE2351254C3 true DE2351254C3 (de) | 1980-03-06 |
Family
ID=23147444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2351254A Expired DE2351254C3 (de) | 1972-10-16 | 1973-10-12 | Verfahren zum Herstellen einer Multidioden-Speicherplatte für eine Bildaufnahmeröhre |
Country Status (8)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5639020B2 (US20100154141A1-20100624-C00001.png) * | 1973-10-05 | 1981-09-10 | ||
| US3964986A (en) * | 1975-03-31 | 1976-06-22 | Rca Corporation | Method of forming an overlayer including a blocking contact for cadmium selenide photoconductive imaging bodies |
| US4160188A (en) * | 1976-04-23 | 1979-07-03 | The United States Of America As Represented By The Secretary Of The Navy | Electron beam tube |
| US4513308A (en) * | 1982-09-23 | 1985-04-23 | The United States Of America As Represented By The Secretary Of The Navy | p-n Junction controlled field emitter array cathode |
| US4521713A (en) * | 1983-01-27 | 1985-06-04 | Rca Corporation | Silicon target support assembly for an image sensing device |
| EP1196746B1 (en) * | 1999-07-16 | 2006-03-29 | Honeywell Inc. | HIGH TEMPERATURE ZrN AND HfN IR SCENE PROJECTOR PIXELS |
| US7634127B1 (en) * | 2004-07-01 | 2009-12-15 | Advanced Micro Devices, Inc. | Efficient storage of fail data to aid in fault isolation |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3513035A (en) * | 1967-11-01 | 1970-05-19 | Fairchild Camera Instr Co | Semiconductor device process for reducing surface recombination velocity |
-
1972
- 1972-10-16 US US00297715A patent/US3830717A/en not_active Expired - Lifetime
-
1973
- 1973-10-12 GB GB4774773A patent/GB1447806A/en not_active Expired
- 1973-10-12 DE DE2351254A patent/DE2351254C3/de not_active Expired
- 1973-10-12 IT IT70016/73A patent/IT996819B/it active
- 1973-10-12 NL NL7314035.A patent/NL162781C/xx not_active IP Right Cessation
- 1973-10-13 JP JP48115273A patent/JPS5234327B2/ja not_active Expired
- 1973-10-15 CA CA183,396A patent/CA987726A/en not_active Expired
- 1973-10-16 FR FR7336832A patent/FR2209212B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL7314035A (US20100154141A1-20100624-C00001.png) | 1974-04-18 |
| CA987726A (en) | 1976-04-20 |
| GB1447806A (en) | 1976-09-02 |
| DE2351254B2 (de) | 1979-06-28 |
| JPS5234327B2 (US20100154141A1-20100624-C00001.png) | 1977-09-02 |
| JPS4995532A (US20100154141A1-20100624-C00001.png) | 1974-09-10 |
| FR2209212A1 (US20100154141A1-20100624-C00001.png) | 1974-06-28 |
| US3830717A (en) | 1974-08-20 |
| FR2209212B1 (US20100154141A1-20100624-C00001.png) | 1978-08-04 |
| IT996819B (it) | 1975-12-10 |
| NL162781B (nl) | 1980-01-15 |
| DE2351254A1 (de) | 1974-04-25 |
| NL162781C (nl) | 1980-06-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: MEIER, F., DIPL.-ING., PAT.-ANW., 2000 HAMBURG |
|
| 8339 | Ceased/non-payment of the annual fee |