DE2350947C2 - Verfahren zur Herstellung eines Ladungsspeicherschirms für eine Bildaufnahmeröhre - Google Patents
Verfahren zur Herstellung eines Ladungsspeicherschirms für eine BildaufnahmeröhreInfo
- Publication number
- DE2350947C2 DE2350947C2 DE19732350947 DE2350947A DE2350947C2 DE 2350947 C2 DE2350947 C2 DE 2350947C2 DE 19732350947 DE19732350947 DE 19732350947 DE 2350947 A DE2350947 A DE 2350947A DE 2350947 C2 DE2350947 C2 DE 2350947C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- charge storage
- temperature
- evaporation
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
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- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 230000007704 transition Effects 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 125000005842 heteroatom Chemical group 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 description 32
- 230000008020 evaporation Effects 0.000 description 31
- 230000035945 sensitivity Effects 0.000 description 24
- 238000007740 vapor deposition Methods 0.000 description 21
- 238000005496 tempering Methods 0.000 description 13
- 238000001228 spectrum Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 206010047571 Visual impairment Diseases 0.000 description 6
- 238000010276 construction Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 230000007847 structural defect Effects 0.000 description 3
- 239000005341 toughened glass Substances 0.000 description 3
- 230000004304 visual acuity Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
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- 230000007547 defect Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000516 activation analysis Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 206010016256 fatigue Diseases 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47102516A JPS524405B2 (OSRAM) | 1972-10-12 | 1972-10-12 | |
| JP47122722A JPS524406B2 (OSRAM) | 1972-12-05 | 1972-12-05 | |
| JP47122724A JPS524408B2 (OSRAM) | 1972-12-05 | 1972-12-05 | |
| JP47122725A JPS524409B2 (OSRAM) | 1972-12-05 | 1972-12-05 | |
| JP47122723A JPS524407B2 (OSRAM) | 1972-12-05 | 1972-12-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2350947A1 DE2350947A1 (de) | 1974-04-25 |
| DE2350947C2 true DE2350947C2 (de) | 1983-01-13 |
Family
ID=27526093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732350947 Expired DE2350947C2 (de) | 1972-10-12 | 1973-10-10 | Verfahren zur Herstellung eines Ladungsspeicherschirms für eine Bildaufnahmeröhre |
Country Status (5)
| Country | Link |
|---|---|
| CA (1) | CA995989A (OSRAM) |
| DE (1) | DE2350947C2 (OSRAM) |
| FR (1) | FR2213580B1 (OSRAM) |
| GB (1) | GB1424608A (OSRAM) |
| NL (1) | NL162506C (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4236829A (en) * | 1978-01-31 | 1980-12-02 | Matsushita Electric Industrial Co., Ltd. | Solid-state image sensor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5027326B1 (OSRAM) * | 1970-04-22 | 1975-09-06 | ||
| JPS4830193B1 (OSRAM) * | 1970-08-17 | 1973-09-18 |
-
1973
- 1973-10-10 FR FR7336207A patent/FR2213580B1/fr not_active Expired
- 1973-10-10 GB GB4736973A patent/GB1424608A/en not_active Expired
- 1973-10-10 CA CA183,030A patent/CA995989A/en not_active Expired
- 1973-10-10 DE DE19732350947 patent/DE2350947C2/de not_active Expired
- 1973-10-11 NL NL7313990A patent/NL162506C/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NL162506B (nl) | 1979-12-17 |
| FR2213580B1 (OSRAM) | 1977-09-09 |
| NL7313990A (OSRAM) | 1974-04-16 |
| FR2213580A1 (OSRAM) | 1974-08-02 |
| NL162506C (nl) | 1980-05-16 |
| CA995989A (en) | 1976-08-31 |
| GB1424608A (en) | 1976-02-11 |
| DE2350947A1 (de) | 1974-04-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |