DE2304080A1 - Verfahren zur herstellung von integrierten magnetspeicherelementen - Google Patents
Verfahren zur herstellung von integrierten magnetspeicherelementenInfo
- Publication number
- DE2304080A1 DE2304080A1 DE19732304080 DE2304080A DE2304080A1 DE 2304080 A1 DE2304080 A1 DE 2304080A1 DE 19732304080 DE19732304080 DE 19732304080 DE 2304080 A DE2304080 A DE 2304080A DE 2304080 A1 DE2304080 A1 DE 2304080A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- magnetic
- intermediate layer
- conductor
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004020 conductor Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 8
- 238000003860 storage Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 230000035699 permeability Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000011162 core material Substances 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/06—Thin magnetic films, e.g. of one-domain structure characterised by the coupling or physical contact with connecting or interacting conductors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Magnetic Heads (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB760272A GB1377811A (en) | 1972-02-18 | 1972-02-18 | Manufacture of integrated magnetic storage elements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2304080A1 true DE2304080A1 (de) | 1973-08-23 |
Family
ID=9836279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732304080 Pending DE2304080A1 (de) | 1972-02-18 | 1973-01-27 | Verfahren zur herstellung von integrierten magnetspeicherelementen |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4896029A (OSRAM) |
| DE (1) | DE2304080A1 (OSRAM) |
| FR (1) | FR2172281A1 (OSRAM) |
| GB (1) | GB1377811A (OSRAM) |
| IT (1) | IT976258B (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7608002A (nl) * | 1976-07-20 | 1978-01-24 | Philips Nv | Werkwijze ter vervaardiging van een magnetische inrichting. |
-
1972
- 1972-02-18 GB GB760272A patent/GB1377811A/en not_active Expired
- 1972-12-29 IT IT7117272A patent/IT976258B/it active
-
1973
- 1973-01-27 DE DE19732304080 patent/DE2304080A1/de active Pending
- 1973-02-15 FR FR7305351A patent/FR2172281A1/fr not_active Withdrawn
- 1973-02-15 JP JP48017959A patent/JPS4896029A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4896029A (OSRAM) | 1973-12-08 |
| IT976258B (it) | 1974-08-20 |
| FR2172281A1 (OSRAM) | 1973-09-28 |
| GB1377811A (en) | 1974-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3343035C2 (de) | Verfahren zur Herstellung eines Magnetmeßfühlers mit mindestens zwei Elementen mit magnetischer Widerstandsänderung | |
| DE68924919T2 (de) | Herstellungsverfahren von magnetischen Aufzeichnungspolen. | |
| DE2259102A1 (de) | Elektromagnetischer wandler und verfahren zu dessen herstellung | |
| DE69310835T2 (de) | Verfahren zum Ätzen von Mustern in Sendust- und Chromschichten | |
| DE2453035B2 (de) | Verfahren zum Aufbringen einer metallischen Schicht in Form eines Musters auf einem mit einer ersten dünnen, metallischen Schicht überzogenen inerten Substrat | |
| DE3117950A1 (de) | Planare duennfilmtransistoren, transistoranordnungen und verfahren zu ihrer herstellung | |
| DE2722557A1 (de) | Verfahren zum aufbringen von metallisierungsmustern auf einem halbleitersubstrat | |
| DE2857725A1 (de) | Verfahren zur herstellung einer duennfilmspule | |
| DE69627562T2 (de) | Dünnfilmmagnetkernwicklung | |
| DE69125271T2 (de) | Dünnschicht-Wandler/Transformatoranordnung | |
| DE2407633B2 (OSRAM) | ||
| DE2835577C2 (de) | Verfahren zur Herstellung eines Dünnfilmmagnetkopfes und Dünnfilmmagnetkopf | |
| DE69124697T2 (de) | Josephson-Einrichtung und Prozess zu deren Herstellung | |
| DE2509866A1 (de) | Register mit magnetbereichsfortpflanzung in duennen magnetischen schichten | |
| DE3702212A1 (de) | Duennschicht-magnetkopf und herstellungsverfahren dafuer | |
| DE3142949C2 (OSRAM) | ||
| DE2931825A1 (de) | Magnetblasen-speichervorrichtung | |
| DE3390321C2 (OSRAM) | ||
| DE69130472T2 (de) | Ein dc SQUID Element und Verfahren zu dessen Herstellung | |
| DE112017007188T5 (de) | Ferromagnetisches tunnel-junction-element und verfahren zur herstellung desselben | |
| DE2304080A1 (de) | Verfahren zur herstellung von integrierten magnetspeicherelementen | |
| DE69119709T2 (de) | Substrat für Matrizenanordnung | |
| DE1146539B (de) | Magnetische Speicher-Matrix unter Verwendung von duennem magnetischem Film | |
| DE2333812A1 (de) | Magnetwandlerstruktur und verfahren zu ihrer herstellung | |
| DE2329488C3 (de) | Magnetischer Fühler mit einem parametrisch erregten zweiten harmonischen Oszillator |