DE2225787C2 - Magnetfeldempfindliches Halbleiterbauelement - Google Patents
Magnetfeldempfindliches HalbleiterbauelementInfo
- Publication number
- DE2225787C2 DE2225787C2 DE2225787A DE2225787A DE2225787C2 DE 2225787 C2 DE2225787 C2 DE 2225787C2 DE 2225787 A DE2225787 A DE 2225787A DE 2225787 A DE2225787 A DE 2225787A DE 2225787 C2 DE2225787 C2 DE 2225787C2
- Authority
- DE
- Germany
- Prior art keywords
- zone
- shaped
- electrode
- highly doped
- disk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 75
- 239000002344 surface layer Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/40—Devices controlled by magnetic fields
Landscapes
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3652671 | 1971-05-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2225787A1 DE2225787A1 (de) | 1972-12-07 |
| DE2225787C2 true DE2225787C2 (de) | 1983-06-01 |
Family
ID=12472229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2225787A Expired DE2225787C2 (de) | 1971-05-26 | 1972-05-26 | Magnetfeldempfindliches Halbleiterbauelement |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3811075A (oth) |
| CA (1) | CA963170A (oth) |
| DE (1) | DE2225787C2 (oth) |
| FR (1) | FR2139178B1 (oth) |
| GB (1) | GB1389472A (oth) |
| NL (1) | NL7207150A (oth) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3911468A (en) * | 1970-05-22 | 1975-10-07 | Kyoichiro Fujikawa | Magnetic-to-electric conversion semiconductor device |
| US4015148A (en) * | 1976-05-05 | 1977-03-29 | Bell Telephone Laboratories, Incorporated | Hall effect device for use in obtaining square or square root of a voltage amplitude |
| US4253107A (en) * | 1978-10-06 | 1981-02-24 | Sprague Electric Company | Integrated circuit with ion implanted hall-cell |
| CH656746A5 (de) * | 1982-06-15 | 1986-07-15 | Landis & Gyr Ag | Magnetfeldsensor. |
| JPH0671104B2 (ja) * | 1987-08-31 | 1994-09-07 | 株式会社東芝 | 磁電変換素子と磁電変換装置 |
| US5637532A (en) * | 1995-06-07 | 1997-06-10 | Advanced Micro Devices, Inc. | Interconnect decoupling scheme |
| US5880513A (en) * | 1996-04-18 | 1999-03-09 | Harris Corporation | Asymmetric snubber resistor |
| CN100520434C (zh) * | 2003-04-28 | 2009-07-29 | 美商楼氏电子有限公司 | 磁场检测器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3416049A (en) * | 1963-05-17 | 1968-12-10 | Sylvania Electric Prod | Integrated bias resistors for micro-logic circuitry |
| US3533159A (en) * | 1967-01-06 | 1970-10-13 | Hudson Corp | Method of making a semiconductive transducer |
| NL158658B (nl) * | 1967-09-08 | 1978-11-15 | Philips Nv | Hall-element, alsmede collectorloze elektromotor waarin dit hall-element is toegepast. |
| US3668439A (en) * | 1969-09-11 | 1972-06-06 | Mitsubishi Electric Corp | Magnetically operated semiconductor device |
| US3596114A (en) * | 1969-11-25 | 1971-07-27 | Honeywell Inc | Hall effect contactless switch with prebiased schmitt trigger |
-
1972
- 1972-05-23 US US00256157A patent/US3811075A/en not_active Expired - Lifetime
- 1972-05-26 FR FR7219014A patent/FR2139178B1/fr not_active Expired
- 1972-05-26 NL NL7207150A patent/NL7207150A/xx not_active Application Discontinuation
- 1972-05-26 DE DE2225787A patent/DE2225787C2/de not_active Expired
- 1972-05-26 GB GB2495372A patent/GB1389472A/en not_active Expired
- 1972-05-26 CA CA143,174A patent/CA963170A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2139178B1 (oth) | 1979-03-16 |
| FR2139178A1 (oth) | 1973-01-05 |
| GB1389472A (en) | 1975-04-03 |
| DE2225787A1 (de) | 1972-12-07 |
| US3811075A (en) | 1974-05-14 |
| NL7207150A (oth) | 1972-11-28 |
| CA963170A (en) | 1975-02-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |