DE2211875B2 - - Google Patents

Info

Publication number
DE2211875B2
DE2211875B2 DE2211875A DE2211875A DE2211875B2 DE 2211875 B2 DE2211875 B2 DE 2211875B2 DE 2211875 A DE2211875 A DE 2211875A DE 2211875 A DE2211875 A DE 2211875A DE 2211875 B2 DE2211875 B2 DE 2211875B2
Authority
DE
Germany
Prior art keywords
layer
irradiation
coating
electron beam
groups
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE2211875A
Other languages
German (de)
English (en)
Other versions
DE2211875C3 (OSRAM
DE2211875A1 (de
Inventor
Barry Forester Burgess Hill Sussex Martin
Edward David Purley Surrey Roberts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2211875A1 publication Critical patent/DE2211875A1/de
Publication of DE2211875B2 publication Critical patent/DE2211875B2/de
Application granted granted Critical
Publication of DE2211875C3 publication Critical patent/DE2211875C3/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Silicon Compounds (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
DE19722211875 1971-03-15 1972-03-11 Verfahren zur Herstellung von mit Öffnungen versehenen Filmen aus einem Material auf Basis von Siliciumoxyd auf einem Substrat Granted DE2211875A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB688471 1971-03-15

Publications (3)

Publication Number Publication Date
DE2211875A1 DE2211875A1 (de) 1972-09-28
DE2211875B2 true DE2211875B2 (OSRAM) 1979-01-11
DE2211875C3 DE2211875C3 (OSRAM) 1979-09-13

Family

ID=9822552

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722211875 Granted DE2211875A1 (de) 1971-03-15 1972-03-11 Verfahren zur Herstellung von mit Öffnungen versehenen Filmen aus einem Material auf Basis von Siliciumoxyd auf einem Substrat

Country Status (6)

Country Link
US (1) US3825466A (OSRAM)
JP (1) JPS5328879B1 (OSRAM)
DE (1) DE2211875A1 (OSRAM)
FR (1) FR2130196B1 (OSRAM)
GB (1) GB1316711A (OSRAM)
IT (1) IT952963B (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4041190A (en) * 1971-06-29 1977-08-09 Thomson-Csf Method for producing a silica mask on a semiconductor substrate
US3922206A (en) * 1972-12-29 1975-11-25 Atomic Energy Of Australia Method of photo-etching and photogravure using fission fragment and/or alpha ray etch tracks from toned photographs
GB1451623A (en) * 1973-10-01 1976-10-06 Mullard Ltd Method of prov8ding a patterned layer of silicon-containing oxide on a substrate
JPS552041U (OSRAM) * 1978-06-20 1980-01-08
JPS5945946A (ja) * 1982-09-06 1984-03-15 Toyota Central Res & Dev Lab Inc 中空糸状多孔質ガラスの製造法
JPS6221151A (ja) * 1985-07-19 1987-01-29 Matsushita Electric Ind Co Ltd パタ−ン形成方法
AU587913B2 (en) * 1986-10-03 1989-08-31 Denki Kagaku Kogyo Kabushiki Kaisha Heat resistant vessel and process for manufacturing same

Also Published As

Publication number Publication date
GB1316711A (en) 1973-05-16
FR2130196B1 (OSRAM) 1977-09-02
DE2211875C3 (OSRAM) 1979-09-13
DE2211875A1 (de) 1972-09-28
US3825466A (en) 1974-07-23
FR2130196A1 (OSRAM) 1972-11-03
IT952963B (it) 1973-07-30
JPS5328879B1 (OSRAM) 1978-08-17

Similar Documents

Publication Publication Date Title
DE3221180C2 (OSRAM)
DE2638799B2 (de) Verfahren zur Verbesserung der Haftung von metallischen Leiterzügen auf Polyimidschichten in integrierten Schaltungen
DE2547792B2 (de) Verfahren zur herstellung eines halbleiterbauelementes
DE2264407B2 (de) Flüssigkristall-Anzeigeeinrichtung und Verfahren zu ihrer Herstellung Ausscheidung aus: 2238429
DE1444496A1 (de) Epitaxialer Wachstumsprozess
US3314871A (en) Method of cataphoretic deposition of luminescent materials
EP0022280B1 (de) Verfahren zum Ätzen von Silizium-Substraten
DE2211875C3 (OSRAM)
DE2302148C2 (de) Verfahren zur Herstellung eines Phosphorsilicatglasschichtmusters
DE3490105T1 (de) Verbesserungen an Belägen, die geeignet sind, hohen thermischen Belastungen zu widerstehen, und insbesondere an Belägen für Satelliten und Raumschiffe, sowie Verfahren zur Herstellung dieser Beläge
DE2726813A1 (de) Verfahren zur herstellung eines fotowiderstandes
EP1658647A2 (de) Integrierte schaltung mit einem organischen halbleiter und verfahren zur herstellung einer integrierten schaltung
DE3744368C1 (de) Verfahren zur Herstellung von festen optischen Einfach- und Mehrfach-Interferenz-Schichten
EP0166893A1 (de) Trockenätzverfahren
DE1521950A1 (de) Verfahren zur Herstellung eines Oxydbelages auf einem vorzugsweise einkristallinen Koerper aus Halbleitermaterial
DE2506457C3 (de) Verfahren zur Herstellung einer silikatischen Abdeckschicht auf einer Halbleiterscheibe öder auf einer auf ihr befindlichen Schicht
DE2316520B2 (de) Verfahren zum Dotieren von Halbleiterplättchen durch Diffusion aus einer auf das Halbleitermaterial aufgebrachten Schicht
DE2331516A1 (de) Verfahren zur herstellung von tiefdiffundierten halbleitenden bauteilen
DE2231912C2 (de) Verfahren zur Herstellung einer Siliciumdioxydmaske
JP2506801B2 (ja) 導電性有機膜の形成方法
JPS5524923A (en) Manufacture of transparent titanium oxide film
DE3150420A1 (de) Verfahren zur bildung einer duennen phosphorschicht auf siliziumsubstraten durch aufdampfen von h 3 po 4
Martin et al. Improvements relating to methods of producing films comprising siliceous material
DE1521492C3 (de) Verfahren zum Herstellen von Aluminiumstrukturen auf Halbleiteroberflächen, Vorrichtung zur Durchführung des Verfahrens und Verwendung des Verfahrens
DE2306474C3 (de) Verfahren zum Herstellen farbiger Lüsterüberzüge

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee