DE2144942C3 - Verfahren zur Herstellung insbesondere nachfolgend zu oxydierender oder diffundierender HalbleiterplBttchen - Google Patents

Verfahren zur Herstellung insbesondere nachfolgend zu oxydierender oder diffundierender HalbleiterplBttchen

Info

Publication number
DE2144942C3
DE2144942C3 DE2144942A DE2144942A DE2144942C3 DE 2144942 C3 DE2144942 C3 DE 2144942C3 DE 2144942 A DE2144942 A DE 2144942A DE 2144942 A DE2144942 A DE 2144942A DE 2144942 C3 DE2144942 C3 DE 2144942C3
Authority
DE
Germany
Prior art keywords
semiconductor
rod
furnace
semiconductor wafers
cut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2144942A
Other languages
German (de)
English (en)
Other versions
DE2144942B2 (de
DE2144942A1 (de
Inventor
Kinji Sagamihara Hoshi
Kazuhiro Yokohama Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7858370A external-priority patent/JPS5013112B1/ja
Priority claimed from JP45096065A external-priority patent/JPS506305B1/ja
Priority claimed from JP46004885A external-priority patent/JPS5217278B1/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2144942A1 publication Critical patent/DE2144942A1/de
Publication of DE2144942B2 publication Critical patent/DE2144942B2/de
Application granted granted Critical
Publication of DE2144942C3 publication Critical patent/DE2144942C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/18—Preparing bulk and homogeneous wafers by shaping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B28D5/0088—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being angularly adjustable
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B28D5/028—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a ring blade having an inside cutting edge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/042—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with blades or wires mounted in a reciprocating frame
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE2144942A 1970-09-08 1971-09-08 Verfahren zur Herstellung insbesondere nachfolgend zu oxydierender oder diffundierender HalbleiterplBttchen Expired DE2144942C3 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP8942270 1970-09-08
JP7858370A JPS5013112B1 (https=) 1970-09-08 1970-09-08
JP45096065A JPS506305B1 (https=) 1970-10-30 1970-10-30
JP46004885A JPS5217278B1 (https=) 1971-02-05 1971-02-05

Publications (3)

Publication Number Publication Date
DE2144942A1 DE2144942A1 (de) 1972-04-06
DE2144942B2 DE2144942B2 (de) 1978-08-17
DE2144942C3 true DE2144942C3 (de) 1979-04-05

Family

ID=27454181

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2144942A Expired DE2144942C3 (de) 1970-09-08 1971-09-08 Verfahren zur Herstellung insbesondere nachfolgend zu oxydierender oder diffundierender HalbleiterplBttchen

Country Status (4)

Country Link
CA (1) CA970073A (https=)
DE (1) DE2144942C3 (https=)
GB (1) GB1378876A (https=)
NL (1) NL7112376A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3010866A1 (de) * 1980-03-21 1981-10-01 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum zersaegen von kristallstaeben
US4738272A (en) * 1984-05-21 1988-04-19 Mcconnell Christopher F Vessel and system for treating wafers with fluids
DE3716943A1 (de) * 1987-05-20 1988-12-08 Hans J Scheel Verfahren und vorrichtung zum trennen von insbesondere stabfoermigem material
WO2008102938A1 (en) * 2007-02-22 2008-08-28 Hana Silicon, Inc. Method for manufacturing silicon matter for plasma processing apparatus

Also Published As

Publication number Publication date
GB1378876A (en) 1974-12-27
CA970073A (en) 1975-06-24
DE2144942B2 (de) 1978-08-17
NL7112376A (https=) 1972-03-10
DE2144942A1 (de) 1972-04-06

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee