DE2124847A1 - Schottky Sperrschicht Halbleiter schaltelement - Google Patents

Schottky Sperrschicht Halbleiter schaltelement

Info

Publication number
DE2124847A1
DE2124847A1 DE19712124847 DE2124847A DE2124847A1 DE 2124847 A1 DE2124847 A1 DE 2124847A1 DE 19712124847 DE19712124847 DE 19712124847 DE 2124847 A DE2124847 A DE 2124847A DE 2124847 A1 DE2124847 A1 DE 2124847A1
Authority
DE
Germany
Prior art keywords
layer
switching element
semiconductor switching
anode contact
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712124847
Other languages
German (de)
English (en)
Inventor
Derrick J Pittsburgh Pa Page (V St A)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of DE2124847A1 publication Critical patent/DE2124847A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H10P95/00—

Landscapes

  • Electrodes Of Semiconductors (AREA)
DE19712124847 1970-05-26 1971-05-19 Schottky Sperrschicht Halbleiter schaltelement Pending DE2124847A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4062570A 1970-05-26 1970-05-26

Publications (1)

Publication Number Publication Date
DE2124847A1 true DE2124847A1 (de) 1971-12-09

Family

ID=21912022

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712124847 Pending DE2124847A1 (de) 1970-05-26 1971-05-19 Schottky Sperrschicht Halbleiter schaltelement

Country Status (7)

Country Link
US (1) US3652905A (enExample)
BE (1) BE767579A (enExample)
BR (1) BR7103161D0 (enExample)
CA (1) CA923633A (enExample)
DE (1) DE2124847A1 (enExample)
FR (1) FR2090302A1 (enExample)
GB (1) GB1343501A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849789A (en) * 1972-11-01 1974-11-19 Gen Electric Schottky barrier diodes
JPS49115481A (enExample) * 1973-02-20 1974-11-05
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
US4310568A (en) * 1976-12-29 1982-01-12 International Business Machines Corporation Method of fabricating improved Schottky barrier contacts
US4141020A (en) * 1976-12-29 1979-02-20 International Business Machines Corporation Intermetallic aluminum-transition metal compound Schottky contact
US4215156A (en) * 1977-08-26 1980-07-29 International Business Machines Corporation Method for fabricating tantalum semiconductor contacts
US4586063A (en) * 1984-04-02 1986-04-29 Oki Electric Industry Co., Ltd. Schottky barrier gate FET including tungsten-aluminum alloy
US5027166A (en) * 1987-12-04 1991-06-25 Sanken Electric Co., Ltd. High voltage, high speed Schottky semiconductor device and method of fabrication
JPH0618276B2 (ja) * 1988-11-11 1994-03-09 サンケン電気株式会社 半導体装置
JP2648519B2 (ja) * 1989-10-03 1997-09-03 日立粉末冶金株式会社 シンクロナイザーハブの製造方法
US6229193B1 (en) * 1998-04-06 2001-05-08 California Institute Of Technology Multiple stage high power diode
US20100264488A1 (en) * 2009-04-15 2010-10-21 Force Mos Technology Co. Ltd. Low Qgd trench MOSFET integrated with schottky rectifier

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL269131A (enExample) * 1960-10-25
US3265542A (en) * 1962-03-15 1966-08-09 Philco Corp Semiconductor device and method for the fabrication thereof

Also Published As

Publication number Publication date
BR7103161D0 (pt) 1973-04-10
FR2090302A1 (enExample) 1972-01-14
CA923633A (en) 1973-03-27
GB1343501A (en) 1974-01-10
BE767579A (fr) 1971-11-25
US3652905A (en) 1972-03-28

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