DE2106119A1 - HF-Lateral-Transistor für inte grierte Schaltkreise - Google Patents
HF-Lateral-Transistor für inte grierte SchaltkreiseInfo
- Publication number
- DE2106119A1 DE2106119A1 DE19712106119 DE2106119A DE2106119A1 DE 2106119 A1 DE2106119 A1 DE 2106119A1 DE 19712106119 DE19712106119 DE 19712106119 DE 2106119 A DE2106119 A DE 2106119A DE 2106119 A1 DE2106119 A1 DE 2106119A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- base
- emitter
- conductivity
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 4
- 239000012141 concentrate Substances 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000000969 carrier Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/645—Combinations of only lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1080670A | 1970-02-12 | 1970-02-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2106119A1 true DE2106119A1 (de) | 1971-09-23 |
Family
ID=21747522
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712106119 Pending DE2106119A1 (de) | 1970-02-12 | 1971-02-10 | HF-Lateral-Transistor für inte grierte Schaltkreise |
| DE19717104979U Expired DE7104979U (de) | 1970-02-12 | 1971-02-10 | Hf-lateral-transistor fuer integrierte schaltkreise |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19717104979U Expired DE7104979U (de) | 1970-02-12 | 1971-02-10 | Hf-lateral-transistor fuer integrierte schaltkreise |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE762341A (OSRAM) |
| DE (2) | DE2106119A1 (OSRAM) |
| FR (1) | FR2079392B3 (OSRAM) |
| NL (1) | NL7101918A (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2544907A1 (de) * | 1974-10-07 | 1976-04-08 | Nippon Telegraph & Telephone | Halbleiteranordnung |
-
1971
- 1971-02-01 BE BE762341A patent/BE762341A/xx unknown
- 1971-02-10 DE DE19712106119 patent/DE2106119A1/de active Pending
- 1971-02-10 DE DE19717104979U patent/DE7104979U/de not_active Expired
- 1971-02-12 FR FR7104895A patent/FR2079392B3/fr not_active Expired
- 1971-02-12 NL NL7101918A patent/NL7101918A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2544907A1 (de) * | 1974-10-07 | 1976-04-08 | Nippon Telegraph & Telephone | Halbleiteranordnung |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2079392B3 (OSRAM) | 1973-10-19 |
| BE762341A (fr) | 1971-08-02 |
| NL7101918A (OSRAM) | 1971-08-16 |
| DE7104979U (de) | 1971-06-24 |
| FR2079392A7 (OSRAM) | 1971-11-12 |
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