DE2064110A1 - Mittels einer Gate-Elektrode steuerbare Schalteinrichtung - Google Patents

Mittels einer Gate-Elektrode steuerbare Schalteinrichtung

Info

Publication number
DE2064110A1
DE2064110A1 DE19702064110 DE2064110A DE2064110A1 DE 2064110 A1 DE2064110 A1 DE 2064110A1 DE 19702064110 DE19702064110 DE 19702064110 DE 2064110 A DE2064110 A DE 2064110A DE 2064110 A1 DE2064110 A1 DE 2064110A1
Authority
DE
Germany
Prior art keywords
area
switching device
areas
cathode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19702064110
Other languages
German (de)
English (en)
Inventor
Thomas P. Greensburg Pa. Nowalk (V.StA.). HOIl 1-16
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of DE2064110A1 publication Critical patent/DE2064110A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors

Landscapes

  • Thyristors (AREA)
DE19702064110 1970-01-02 1970-12-28 Mittels einer Gate-Elektrode steuerbare Schalteinrichtung Pending DE2064110A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13270A 1970-01-02 1970-01-02

Publications (1)

Publication Number Publication Date
DE2064110A1 true DE2064110A1 (de) 1971-07-08

Family

ID=21690069

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702064110 Pending DE2064110A1 (de) 1970-01-02 1970-12-28 Mittels einer Gate-Elektrode steuerbare Schalteinrichtung

Country Status (4)

Country Link
JP (1) JPS57660B1 (enrdf_load_stackoverflow)
BE (1) BE761109A (enrdf_load_stackoverflow)
DE (1) DE2064110A1 (enrdf_load_stackoverflow)
FR (1) FR2075910A1 (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022355A1 (en) * 1979-07-06 1981-01-14 Hitachi, Ltd. Gate turn-off thyristor
EP0066850A3 (en) * 1981-06-05 1983-08-17 Hitachi, Ltd. Semiconductor switching device
EP0111166A1 (en) * 1982-11-10 1984-06-20 Hitachi, Ltd. Gate turn-off thyristor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2191267B1 (enrdf_load_stackoverflow) * 1972-06-28 1977-02-18 Westinghouse Brake Semi Conduc
EP0220469B1 (de) * 1985-10-15 1989-12-06 Siemens Aktiengesellschaft Leistungsthyristor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022355A1 (en) * 1979-07-06 1981-01-14 Hitachi, Ltd. Gate turn-off thyristor
EP0066850A3 (en) * 1981-06-05 1983-08-17 Hitachi, Ltd. Semiconductor switching device
EP0111166A1 (en) * 1982-11-10 1984-06-20 Hitachi, Ltd. Gate turn-off thyristor

Also Published As

Publication number Publication date
BE761109A (fr) 1971-06-30
JPS57660B1 (enrdf_load_stackoverflow) 1982-01-07
FR2075910A1 (enrdf_load_stackoverflow) 1971-10-15

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