DE2031818A1 - Verfahren zur Herstellung elektro migrationsfreier Metallubergange - Google Patents
Verfahren zur Herstellung elektro migrationsfreier MetallubergangeInfo
- Publication number
- DE2031818A1 DE2031818A1 DE19702031818 DE2031818A DE2031818A1 DE 2031818 A1 DE2031818 A1 DE 2031818A1 DE 19702031818 DE19702031818 DE 19702031818 DE 2031818 A DE2031818 A DE 2031818A DE 2031818 A1 DE2031818 A1 DE 2031818A1
- Authority
- DE
- Germany
- Prior art keywords
- metal
- diffusion
- transition
- metals
- diffusion coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 108
- 239000002184 metal Substances 0.000 title claims description 108
- 230000007704 transition Effects 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 24
- 230000008569 process Effects 0.000 title claims description 4
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 52
- 150000002500 ions Chemical class 0.000 claims description 30
- 150000002739 metals Chemical class 0.000 claims description 28
- 239000000956 alloy Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 238000001556 precipitation Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 238000005324 grain boundary diffusion Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 230000008859 change Effects 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- 230000035508 accumulation Effects 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000001803 electron scattering Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 101100116903 Caulobacter vibrioides (strain ATCC 19089 / CB15) divJ gene Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- NSAODVHAXBZWGW-UHFFFAOYSA-N cadmium silver Chemical compound [Ag].[Cd] NSAODVHAXBZWGW-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83777869A | 1969-06-30 | 1969-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2031818A1 true DE2031818A1 (de) | 1971-01-14 |
Family
ID=25275395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702031818 Withdrawn DE2031818A1 (de) | 1969-06-30 | 1970-06-26 | Verfahren zur Herstellung elektro migrationsfreier Metallubergange |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS493310B1 (enrdf_load_stackoverflow) |
| AU (1) | AU1686870A (enrdf_load_stackoverflow) |
| CH (1) | CH536557A (enrdf_load_stackoverflow) |
| DE (1) | DE2031818A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2048036B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1312811A (enrdf_load_stackoverflow) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL292995A (enrdf_load_stackoverflow) * | 1962-05-25 | 1900-01-01 | ||
| US3241931A (en) * | 1963-03-01 | 1966-03-22 | Rca Corp | Semiconductor devices |
-
1970
- 1970-05-15 FR FR7017727A patent/FR2048036B1/fr not_active Expired
- 1970-05-29 CH CH804170A patent/CH536557A/de not_active IP Right Cessation
- 1970-06-01 GB GB2625370A patent/GB1312811A/en not_active Expired
- 1970-06-11 JP JP4996070A patent/JPS493310B1/ja active Pending
- 1970-06-26 DE DE19702031818 patent/DE2031818A1/de not_active Withdrawn
- 1970-06-26 AU AU16868/70A patent/AU1686870A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2048036B1 (enrdf_load_stackoverflow) | 1974-10-31 |
| JPS493310B1 (enrdf_load_stackoverflow) | 1974-01-25 |
| AU1686870A (en) | 1972-01-06 |
| FR2048036A1 (enrdf_load_stackoverflow) | 1971-03-19 |
| GB1312811A (en) | 1973-04-11 |
| CH536557A (de) | 1973-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69637333T2 (de) | Kupferlegierungen für Chipverbindungen und Herstellungsverfahren | |
| DE3876655T2 (de) | Verbindungssystem hoher geschwindigkeit mit feuerfesten kontakten vom "non-dogbone-typ" und ein aktiver elektromigrationsunterdrueckender mechanismus. | |
| DE69322180T2 (de) | Halbleiteranordnung mit einer Leiterschicht | |
| DE3339957C2 (enrdf_load_stackoverflow) | ||
| DE112014006069B4 (de) | Halbleitereinrichtung und Herstellverfahren der Halbleitereinrichtung | |
| DE68918773T2 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung mit mindestens einer kleine Kontaktlöcher enthaltenden Leiterbahn. | |
| DE112012003823T5 (de) | Mikrostrukturmodifikation in Kupferverbindungsstrukturen | |
| DE4309542A1 (de) | Verfahren und Vorrichtung zur Herstellung von Aluminium-Einkristall-Zwischenverbindungen auf Isolatoren | |
| DE2647566A1 (de) | Leiterstreifenstruktur, ihre verwendung und herstellung | |
| DE1789106A1 (de) | Halbleiteranordnung | |
| DE10041565B4 (de) | Metallzwischenverbindung, Halbleitervorrichtung, Verfahren zum Bilden einer Metallzwischenverbindung und Verfahren zum Herstellen einer Halbleitervorrichtung | |
| DE10223957B4 (de) | Ein verbessertes Verfahren zum Elektroplattieren von Kupfer auf einer strukturierten dielektrischen Schicht | |
| DE2917654A1 (de) | Anordnung und verfahren zum selektiven, elektrochemischen aetzen | |
| DE69132190T2 (de) | Verfahren zum Herstellen von gestapelten Verbindungs/kontaktlöchern aus Aluminium für Mehrschichtverbindungen | |
| EP1497859B1 (de) | Verfahren zur herstellung dünner metallhaltiger schichten mit geringem elektrischen widerstand | |
| DE10308275A1 (de) | Strahlungsresistentes Halbleiterbauteil | |
| DE102005034182B4 (de) | Halbleitervorrichtung und Herstellungsverfahren dafür | |
| DE2831035A1 (de) | Verfahren zur herstellung eines waermeempfindlichen halbleiter-schaltelements | |
| DE69318880T2 (de) | Planarisierungsverfahren von einer integrierten Schaltung | |
| DE2457488B2 (de) | Elektrische Verbindung zwischen Bauelementen aus verschiedenen Materialien, sowie Verfahren zur Herstellung | |
| DE69728205T2 (de) | Herstellungsverfahren von Verbindungen in einer integrierten Schaltung | |
| DE102006045750A1 (de) | Leitendes Klebemittel, Verfahren zu dessen Herstellung und Klebeverbindungs-Verfahren | |
| DE2031818A1 (de) | Verfahren zur Herstellung elektro migrationsfreier Metallubergange | |
| DE4443424B4 (de) | Anordnungen aus einem mehrschichtigen Substrat und einem Leistungselement und Verfahren zu ihrer Herstellung | |
| DE3105517C2 (de) | Mit einer profilierten Oberfläche versehener Verbundsupraleiter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |