DE2031444A1 - Optoelektronische Anordnung - Google Patents
Optoelektronische AnordnungInfo
- Publication number
- DE2031444A1 DE2031444A1 DE19702031444 DE2031444A DE2031444A1 DE 2031444 A1 DE2031444 A1 DE 2031444A1 DE 19702031444 DE19702031444 DE 19702031444 DE 2031444 A DE2031444 A DE 2031444A DE 2031444 A1 DE2031444 A1 DE 2031444A1
- Authority
- DE
- Germany
- Prior art keywords
- arrangement according
- layer
- optoelectronic
- optoelectronic arrangement
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005693 optoelectronics Effects 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 25
- 230000005855 radiation Effects 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
- 238000010521 absorption reaction Methods 0.000 claims description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 230000006798 recombination Effects 0.000 claims description 5
- 238000005215 recombination Methods 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 241000272525 Anas platyrhynchos Species 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 230000005070 ripening Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR6923357A FR2126462A5 (enrdf_load_stackoverflow) | 1969-07-09 | 1969-07-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2031444A1 true DE2031444A1 (de) | 1971-01-14 |
Family
ID=9037210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702031444 Pending DE2031444A1 (de) | 1969-07-09 | 1970-06-25 | Optoelektronische Anordnung |
Country Status (5)
| Country | Link |
|---|---|
| AU (1) | AU1717570A (enrdf_load_stackoverflow) |
| BE (1) | BE753117A (enrdf_load_stackoverflow) |
| DE (1) | DE2031444A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2126462A5 (enrdf_load_stackoverflow) |
| NL (1) | NL7009929A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2197297A1 (enrdf_load_stackoverflow) * | 1972-06-22 | 1974-03-22 | Ibm | |
| US4199777A (en) * | 1976-02-02 | 1980-04-22 | Hitachi, Ltd. | Semiconductor device and a method of manufacturing the same |
| EP0080945A3 (en) * | 1981-11-30 | 1985-06-12 | Fujitsu Limited | Optical semiconductor device |
| US4607368A (en) * | 1981-11-30 | 1986-08-19 | Fujitsu Limited | Optical semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4626878A (en) * | 1981-12-11 | 1986-12-02 | Sanyo Electric Co., Ltd. | Semiconductor optical logical device |
-
1969
- 1969-07-09 FR FR6923357A patent/FR2126462A5/fr not_active Expired
-
1970
- 1970-06-25 DE DE19702031444 patent/DE2031444A1/de active Pending
- 1970-07-04 NL NL7009929A patent/NL7009929A/xx unknown
- 1970-07-06 AU AU17175/70A patent/AU1717570A/en not_active Expired
- 1970-07-07 BE BE753117D patent/BE753117A/nl unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2197297A1 (enrdf_load_stackoverflow) * | 1972-06-22 | 1974-03-22 | Ibm | |
| US4199777A (en) * | 1976-02-02 | 1980-04-22 | Hitachi, Ltd. | Semiconductor device and a method of manufacturing the same |
| EP0080945A3 (en) * | 1981-11-30 | 1985-06-12 | Fujitsu Limited | Optical semiconductor device |
| US4607368A (en) * | 1981-11-30 | 1986-08-19 | Fujitsu Limited | Optical semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7009929A (enrdf_load_stackoverflow) | 1971-01-12 |
| AU1717570A (en) | 1972-01-13 |
| BE753117A (nl) | 1971-01-07 |
| FR2126462A5 (enrdf_load_stackoverflow) | 1972-10-06 |
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