DE2025779C3 - Verfahren zum Abscheiden einer Schicht aus einer binären Verbindung an der Oberfläche eines Halbleiterkristalls - Google Patents

Verfahren zum Abscheiden einer Schicht aus einer binären Verbindung an der Oberfläche eines Halbleiterkristalls

Info

Publication number
DE2025779C3
DE2025779C3 DE2025779A DE2025779A DE2025779C3 DE 2025779 C3 DE2025779 C3 DE 2025779C3 DE 2025779 A DE2025779 A DE 2025779A DE 2025779 A DE2025779 A DE 2025779A DE 2025779 C3 DE2025779 C3 DE 2025779C3
Authority
DE
Germany
Prior art keywords
semiconductor crystal
heated
binary compound
nozzle
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2025779A
Other languages
German (de)
English (en)
Other versions
DE2025779A1 (de
DE2025779B2 (de
Inventor
Erich Dipl.-Chem. Dr. 8000 Muenchen Pammer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2025779A priority Critical patent/DE2025779C3/de
Priority to NL7106930A priority patent/NL7106930A/xx
Priority to US00146098A priority patent/US3793068A/en
Priority to GB1665571A priority patent/GB1356591A/en
Priority to FR7119123A priority patent/FR2090306A1/fr
Priority to CA113908A priority patent/CA926524A/en
Publication of DE2025779A1 publication Critical patent/DE2025779A1/de
Publication of DE2025779B2 publication Critical patent/DE2025779B2/de
Application granted granted Critical
Publication of DE2025779C3 publication Critical patent/DE2025779C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
DE2025779A 1970-05-26 1970-05-26 Verfahren zum Abscheiden einer Schicht aus einer binären Verbindung an der Oberfläche eines Halbleiterkristalls Expired DE2025779C3 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE2025779A DE2025779C3 (de) 1970-05-26 1970-05-26 Verfahren zum Abscheiden einer Schicht aus einer binären Verbindung an der Oberfläche eines Halbleiterkristalls
NL7106930A NL7106930A (enExample) 1970-05-26 1971-05-19
US00146098A US3793068A (en) 1970-05-26 1971-05-24 Method of producing coatings to be used as masking, passivation, contacting and doping layers on semiconductor surfaces
GB1665571A GB1356591A (en) 1970-05-26 1971-05-24 Coating of semiconductor crystals
FR7119123A FR2090306A1 (enExample) 1970-05-26 1971-05-26
CA113908A CA926524A (en) 1970-05-26 1971-05-26 Coating of semiconductor crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2025779A DE2025779C3 (de) 1970-05-26 1970-05-26 Verfahren zum Abscheiden einer Schicht aus einer binären Verbindung an der Oberfläche eines Halbleiterkristalls

Publications (3)

Publication Number Publication Date
DE2025779A1 DE2025779A1 (de) 1971-12-02
DE2025779B2 DE2025779B2 (de) 1980-03-20
DE2025779C3 true DE2025779C3 (de) 1980-11-06

Family

ID=5772179

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2025779A Expired DE2025779C3 (de) 1970-05-26 1970-05-26 Verfahren zum Abscheiden einer Schicht aus einer binären Verbindung an der Oberfläche eines Halbleiterkristalls

Country Status (6)

Country Link
US (1) US3793068A (enExample)
CA (1) CA926524A (enExample)
DE (1) DE2025779C3 (enExample)
FR (1) FR2090306A1 (enExample)
GB (1) GB1356591A (enExample)
NL (1) NL7106930A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3914515A (en) * 1973-07-16 1975-10-21 Rca Corp Process for forming transition metal oxide films on a substrate and photomasks therefrom
US4331737A (en) 1978-04-01 1982-05-25 Zaidan Hojin Handotai Kenkyu Shinkokai Oxynitride film and its manufacturing method
DE3040693A1 (de) * 1979-11-08 1981-05-27 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur metallisierung von halbleiterbauelementen
US4468685A (en) * 1980-03-27 1984-08-28 Farrow Robin F C Infrared detector using grey tin
US4630343A (en) * 1981-03-16 1986-12-23 Fairchild Camera & Instrument Corp. Product for making isolated semiconductor structure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2732313A (en) * 1956-01-24 Titanium
US2873208A (en) * 1954-09-27 1959-02-10 Philips Corp Deposition of refractory metals and alloys thereof
US3219482A (en) * 1962-06-25 1965-11-23 Union Carbide Corp Method of gas plating adherent coatings on silicon
US3215570A (en) * 1963-03-15 1965-11-02 Texas Instruments Inc Method for manufacture of semiconductor devices
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
GB1172230A (en) * 1965-12-16 1969-11-26 Matsushita Electronics Corp A Method of Manufacturing Semiconductor Device
GB1217716A (en) * 1967-06-14 1970-12-31 Matsushita Electronics Corp A process for forming a titanium dioxide film
US3594227A (en) * 1968-07-12 1971-07-20 Bell Telephone Labor Inc Method for treating semiconductor slices with gases
US3657006A (en) * 1969-11-06 1972-04-18 Peter D Fisher Method and apparatus for depositing doped and undoped glassy chalcogenide films at substantially atmospheric pressure
US3700498A (en) * 1970-12-10 1972-10-24 Ibm Process for making electrophotographic plates

Also Published As

Publication number Publication date
DE2025779A1 (de) 1971-12-02
NL7106930A (enExample) 1971-11-30
CA926524A (en) 1973-05-15
DE2025779B2 (de) 1980-03-20
FR2090306A1 (enExample) 1972-01-14
US3793068A (en) 1974-02-19
GB1356591A (en) 1974-06-12

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee