DE19939658A1 - Elektrolumineszente Dünnfilmvorrichtung und Verfahren zu deren Herstellung - Google Patents
Elektrolumineszente Dünnfilmvorrichtung und Verfahren zu deren HerstellungInfo
- Publication number
- DE19939658A1 DE19939658A1 DE1999139658 DE19939658A DE19939658A1 DE 19939658 A1 DE19939658 A1 DE 19939658A1 DE 1999139658 DE1999139658 DE 1999139658 DE 19939658 A DE19939658 A DE 19939658A DE 19939658 A1 DE19939658 A1 DE 19939658A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- zns
- metal sulfide
- intermediate layer
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI981802A FI105643B (sv) | 1998-08-21 | 1998-08-21 | Tunnfilms-elektroluminiscens-anordning och förfarande för framställning därav |
Publications (1)
Publication Number | Publication Date |
---|---|
DE19939658A1 true DE19939658A1 (de) | 2000-03-23 |
Family
ID=8552342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1999139658 Withdrawn DE19939658A1 (de) | 1998-08-21 | 1999-08-20 | Elektrolumineszente Dünnfilmvorrichtung und Verfahren zu deren Herstellung |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2000068072A (sv) |
DE (1) | DE19939658A1 (sv) |
FI (1) | FI105643B (sv) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
US7732327B2 (en) | 2000-06-28 | 2010-06-08 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6734020B2 (en) | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US6729824B2 (en) | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
US6620670B2 (en) | 2002-01-18 | 2003-09-16 | Applied Materials, Inc. | Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US6827978B2 (en) | 2002-02-11 | 2004-12-07 | Applied Materials, Inc. | Deposition of tungsten films |
US6833161B2 (en) | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
US6720027B2 (en) | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
KR20050111311A (ko) | 2002-12-20 | 2005-11-24 | 이화이어 테크놀로지 코포레이션 | 후막 유전체 전자발광 디스플레이를 위한 장벽 층 |
-
1998
- 1998-08-21 FI FI981802A patent/FI105643B/sv not_active IP Right Cessation
-
1999
- 1999-08-20 JP JP11233749A patent/JP2000068072A/ja active Pending
- 1999-08-20 DE DE1999139658 patent/DE19939658A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FI981802A (sv) | 2000-02-22 |
FI981802A0 (sv) | 1998-08-21 |
JP2000068072A (ja) | 2000-03-03 |
FI105643B (sv) | 2000-09-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8139 | Disposal/non-payment of the annual fee |