DE19882110T1 - Verfahren und Vorrichtung zum Reinigen von Werkstückoberflächen und von Überwachungs-Abtasteinrichtungen während einer Werkstückbehandlung - Google Patents

Verfahren und Vorrichtung zum Reinigen von Werkstückoberflächen und von Überwachungs-Abtasteinrichtungen während einer Werkstückbehandlung

Info

Publication number
DE19882110T1
DE19882110T1 DE19882110T DE19882110T DE19882110T1 DE 19882110 T1 DE19882110 T1 DE 19882110T1 DE 19882110 T DE19882110 T DE 19882110T DE 19882110 T DE19882110 T DE 19882110T DE 19882110 T1 DE19882110 T1 DE 19882110T1
Authority
DE
Germany
Prior art keywords
devices during
scanning devices
workpiece
treatment
monitoring scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19882110T
Other languages
English (en)
Inventor
Paul Holzapfel
Iii Andrew Yednak
John Natalicio
Chad Goudie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Speedfam IPEC Corp
Original Assignee
Speedfam Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/798,803 external-priority patent/US5872633A/en
Application filed by Speedfam Corp filed Critical Speedfam Corp
Publication of DE19882110T1 publication Critical patent/DE19882110T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/013Devices or means for detecting lapping completion
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
DE19882110T 1997-02-12 1998-02-06 Verfahren und Vorrichtung zum Reinigen von Werkstückoberflächen und von Überwachungs-Abtasteinrichtungen während einer Werkstückbehandlung Withdrawn DE19882110T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/798,803 US5872633A (en) 1996-07-26 1997-02-12 Methods and apparatus for detecting removal of thin film layers during planarization
US08/895,284 US5958148A (en) 1996-07-26 1997-07-16 Method for cleaning workpiece surfaces and monitoring probes during workpiece processing
PCT/US1998/002554 WO1998034760A1 (en) 1997-02-12 1998-02-06 Method and apparatus for cleaning workpiece surfaces and monitoring probes during workpiece processing

Publications (1)

Publication Number Publication Date
DE19882110T1 true DE19882110T1 (de) 2000-05-11

Family

ID=27122037

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19882110T Withdrawn DE19882110T1 (de) 1997-02-12 1998-02-06 Verfahren und Vorrichtung zum Reinigen von Werkstückoberflächen und von Überwachungs-Abtasteinrichtungen während einer Werkstückbehandlung

Country Status (7)

Country Link
US (2) US5958148A (de)
JP (1) JP2000514251A (de)
KR (1) KR20000070934A (de)
DE (1) DE19882110T1 (de)
GB (1) GB2337476B (de)
TW (1) TW380079B (de)
WO (1) WO1998034760A1 (de)

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US6240651B1 (en) * 1998-06-17 2001-06-05 Mycrona Gmbh Coordinate measuring machine having a non-sensing probe
US6293845B1 (en) * 1999-09-04 2001-09-25 Mitsubishi Materials Corporation System and method for end-point detection in a multi-head CMP tool using real-time monitoring of motor current
US20030040105A1 (en) * 1999-09-30 2003-02-27 Sklar Larry A. Microfluidic micromixer
US6469518B1 (en) * 2000-01-07 2002-10-22 Advanced Micro Devices, Inc. Method and apparatus for determining measurement frequency based on hardware age and usage
US6309276B1 (en) * 2000-02-01 2001-10-30 Applied Materials, Inc. Endpoint monitoring with polishing rate change
JP2001225261A (ja) * 2000-02-16 2001-08-21 Ebara Corp ポリッシング装置
EP1143222A3 (de) * 2000-04-06 2002-01-02 Applied Materials, Inc. Verfahren und Vorrichtung zur Messung der Schichtdicke von Kupferoxyd
US7751609B1 (en) * 2000-04-20 2010-07-06 Lsi Logic Corporation Determination of film thickness during chemical mechanical polishing
US6609950B2 (en) * 2000-07-05 2003-08-26 Ebara Corporation Method for polishing a substrate
US6634930B1 (en) * 2000-08-09 2003-10-21 Taiwan Semiconductor Manufacturing Co. Ltd Method and apparatus for preventing metal corrosion during chemical mechanical polishing
US6652357B1 (en) 2000-09-22 2003-11-25 Lam Research Corporation Methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing
US6585572B1 (en) 2000-08-22 2003-07-01 Lam Research Corporation Subaperture chemical mechanical polishing system
US7481695B2 (en) 2000-08-22 2009-01-27 Lam Research Corporation Polishing apparatus and methods having high processing workload for controlling polishing pressure applied by polishing head
US6640155B2 (en) 2000-08-22 2003-10-28 Lam Research Corporation Chemical mechanical polishing apparatus and methods with central control of polishing pressure applied by polishing head
US20020023667A1 (en) * 2000-08-31 2002-02-28 Thuan Pham Apparatus and method for cleaning a probe tip
US6471566B1 (en) 2000-09-18 2002-10-29 Lam Research Corporation Sacrificial retaining ring CMP system and methods for implementing the same
US6443815B1 (en) 2000-09-22 2002-09-03 Lam Research Corporation Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing
US6579149B2 (en) 2001-02-06 2003-06-17 International Business Machines Corporation Support and alignment device for enabling chemical mechanical polishing rinse and film measurements
US6319093B1 (en) 2001-02-06 2001-11-20 International Business Machines Corporation Chemical-mechanical polishing system and method for integrated spin dry-film thickness measurement
US6738142B2 (en) * 2001-02-28 2004-05-18 International Business Machines Corporation Integrated wafer cassette metrology assembly
US6736720B2 (en) * 2001-12-26 2004-05-18 Lam Research Corporation Apparatus and methods for controlling wafer temperature in chemical mechanical polishing
KR100434189B1 (ko) * 2002-03-21 2004-06-04 삼성전자주식회사 화학 기계적 연마장치 및 그 제어방법
US6937915B1 (en) * 2002-03-28 2005-08-30 Lam Research Corporation Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control
US7101257B2 (en) * 2003-05-21 2006-09-05 Ebara Corporation Substrate polishing apparatus
JP4467571B2 (ja) * 2003-09-19 2010-05-26 アプライド マテリアルズ インコーポレイテッド 無電解堆積のエンドポイントを検出するための装置および方法
US6955588B1 (en) 2004-03-31 2005-10-18 Lam Research Corporation Method of and platen for controlling removal rate characteristics in chemical mechanical planarization
US7195535B1 (en) 2004-07-22 2007-03-27 Applied Materials, Inc. Metrology for chemical mechanical polishing
US20060062897A1 (en) * 2004-09-17 2006-03-23 Applied Materials, Inc Patterned wafer thickness detection system
US7108588B1 (en) 2005-04-05 2006-09-19 Hitachi Global Storage Technologies Netherlands B.V. System, method, and apparatus for wetting slurry delivery tubes in a chemical mechanical polishing process to prevent clogging thereof
DE102005027721A1 (de) * 2005-06-16 2007-01-04 Dürr Ecoclean GmbH Reinigungsvorrichtung und Verfahren zum Reinigen von Werkstücken
US7210980B2 (en) 2005-08-26 2007-05-01 Applied Materials, Inc. Sealed polishing pad, system and methods
JP2007130583A (ja) * 2005-11-10 2007-05-31 Fuji Clean Kogyo Kk 水処理装置及び水処理方法
CN101966687B (zh) * 2009-07-27 2012-11-28 中芯国际集成电路制造(上海)有限公司 化学机械研磨方法
US20170053794A1 (en) * 2015-08-21 2017-02-23 Globalfoundries Inc. Automatic control of spray bar and units for chemical mechanical polishing in-situ brush cleaning
JP6844971B2 (ja) * 2016-09-02 2021-03-17 株式会社ディスコ 研削装置
US10955439B2 (en) * 2019-03-12 2021-03-23 International Business Machines Corporation Electrochemical cleaning of test probes

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US4307741A (en) * 1980-08-01 1981-12-29 Bethlehem Steel Corporation Probe cleaner
US4462860A (en) 1982-05-24 1984-07-31 At&T Bell Laboratories End point detection
US4768713B1 (en) * 1982-12-15 1995-03-21 Bert E Roper Grove sprayer
GB2173300B (en) * 1985-04-06 1989-06-28 Schaudt Maschinenbau Gmbh Apparatus for optically monitoring the surface finish of ground workpieces
DE3644854A1 (de) 1985-07-31 1987-07-30 Speedfam Corp Werkstueckhalter
JPS6362673A (ja) 1986-09-01 1988-03-18 Speedfam Co Ltd 定寸機構付き平面研磨装置
US4989783A (en) * 1989-08-14 1991-02-05 Fmc Corporation Sensor mounting
USRE34425E (en) 1990-08-06 1993-11-02 Micron Technology, Inc. Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer
US5081796A (en) * 1990-08-06 1992-01-21 Micron Technology, Inc. Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer
EP0532933B1 (de) * 1991-08-21 1995-11-02 Tokyo Seimitsu Co.,Ltd. Blattpositiondetektionsvorrichtung
US5240552A (en) 1991-12-11 1993-08-31 Micron Technology, Inc. Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection
US5498199A (en) 1992-06-15 1996-03-12 Speedfam Corporation Wafer polishing method and apparatus
US5329732A (en) 1992-06-15 1994-07-19 Speedfam Corporation Wafer polishing method and apparatus
US5486701A (en) 1992-06-16 1996-01-23 Prometrix Corporation Method and apparatus for measuring reflectance in two wavelength bands to enable determination of thin film thickness
US5562529A (en) 1992-10-08 1996-10-08 Fujitsu Limited Apparatus and method for uniformly polishing a wafer
IL109589A0 (en) 1993-05-14 1994-08-26 Hughes Aircraft Co Apparatus and method for performing high spatial resolution thin film layer thickness metrology
US5486129A (en) 1993-08-25 1996-01-23 Micron Technology, Inc. System and method for real-time control of semiconductor a wafer polishing, and a polishing head
US5555472A (en) 1993-12-22 1996-09-10 Integrated Process Equipment Corp. Method and apparatus for measuring film thickness in multilayer thin film stack by comparison to a reference library of theoretical signatures
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP2856666B2 (ja) 1993-12-28 1999-02-10 大日本スクリーン製造株式会社 半導体ウェハの絶縁膜厚測定方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5679060A (en) * 1994-07-14 1997-10-21 Silicon Technology Corporation Wafer grinding machine
EP0792515A1 (de) 1994-11-18 1997-09-03 Advanced Micro Devices, Inc. Verfahren zum herstellen einer chemisch-mechanischen polieraufschlämmung und die polieraufschlämmung
US5555474A (en) 1994-12-21 1996-09-10 Integrated Process Equipment Corp. Automatic rejection of diffraction effects in thin film metrology
DE69632490T2 (de) 1995-03-28 2005-05-12 Applied Materials, Inc., Santa Clara Verfahren und Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen
US5559428A (en) 1995-04-10 1996-09-24 International Business Machines Corporation In-situ monitoring of the change in thickness of films
JP3297279B2 (ja) * 1995-12-07 2002-07-02 大日本スクリーン製造株式会社 表面処理終点検出装置
EP0806266A3 (de) * 1996-05-09 1998-12-09 Canon Kabushiki Kaisha Polierverfahren und -vorrichtung zur Verwendung desselben

Also Published As

Publication number Publication date
US6217410B1 (en) 2001-04-17
GB2337476A (en) 1999-11-24
US5958148A (en) 1999-09-28
GB9918179D0 (en) 1999-10-06
WO1998034760A1 (en) 1998-08-13
TW380079B (en) 2000-01-21
GB2337476B (en) 2001-05-30
JP2000514251A (ja) 2000-10-24
KR20000070934A (ko) 2000-11-25

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: SPEEDFAM-IPEC CORP.(N.D.GES.D.STAATES DELAWARE), C

8125 Change of the main classification

Ipc: H01L 21/302

8139 Disposal/non-payment of the annual fee