DE19851813B4 - System und Verfahren zum Bewerten der Abnutzung eines Flash-Speichers - Google Patents

System und Verfahren zum Bewerten der Abnutzung eines Flash-Speichers Download PDF

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Publication number
DE19851813B4
DE19851813B4 DE19851813A DE19851813A DE19851813B4 DE 19851813 B4 DE19851813 B4 DE 19851813B4 DE 19851813 A DE19851813 A DE 19851813A DE 19851813 A DE19851813 A DE 19851813A DE 19851813 B4 DE19851813 B4 DE 19851813B4
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Germany
Prior art keywords
evaluating
wear
flash memory
flash
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19851813A
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English (en)
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DE19851813A1 (de
Inventor
Sang-Wook Han
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
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LG Semicon Co Ltd
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Application filed by LG Semicon Co Ltd filed Critical LG Semicon Co Ltd
Publication of DE19851813A1 publication Critical patent/DE19851813A1/de
Application granted granted Critical
Publication of DE19851813B4 publication Critical patent/DE19851813B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/14Circuits for erasing electrically, e.g. erase voltage switching circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/005Circuit means for protection against loss of information of semiconductor storage devices
DE19851813A 1998-03-13 1998-11-10 System und Verfahren zum Bewerten der Abnutzung eines Flash-Speichers Expired - Fee Related DE19851813B4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980008487A KR100297986B1 (ko) 1998-03-13 1998-03-13 플래쉬 메모리 셀 어레이의 웨어 레벨링 시스템 및 웨어 레벨링 방법

Publications (2)

Publication Number Publication Date
DE19851813A1 DE19851813A1 (de) 1999-09-16
DE19851813B4 true DE19851813B4 (de) 2005-10-20

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Application Number Title Priority Date Filing Date
DE19851813A Expired - Fee Related DE19851813B4 (de) 1998-03-13 1998-11-10 System und Verfahren zum Bewerten der Abnutzung eines Flash-Speichers

Country Status (4)

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US (1) US6016275A (de)
JP (1) JPH11297079A (de)
KR (1) KR100297986B1 (de)
DE (1) DE19851813B4 (de)

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Also Published As

Publication number Publication date
JPH11297079A (ja) 1999-10-29
KR100297986B1 (ko) 2001-10-25
KR19990074703A (ko) 1999-10-05
DE19851813A1 (de) 1999-09-16
US6016275A (en) 2000-01-18

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