DE1964632A1 - Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterplatte zur Anwendung als Ausgangsmaterial bei diesem Verfahren - Google Patents

Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterplatte zur Anwendung als Ausgangsmaterial bei diesem Verfahren

Info

Publication number
DE1964632A1
DE1964632A1 DE19691964632 DE1964632A DE1964632A1 DE 1964632 A1 DE1964632 A1 DE 1964632A1 DE 19691964632 DE19691964632 DE 19691964632 DE 1964632 A DE1964632 A DE 1964632A DE 1964632 A1 DE1964632 A1 DE 1964632A1
Authority
DE
Germany
Prior art keywords
zone
semiconductor
plate
contact
zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19691964632
Other languages
German (de)
English (en)
Inventor
Jacques Thillays
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1964632A1 publication Critical patent/DE1964632A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor

Landscapes

  • Light Receiving Elements (AREA)
  • Thyristors (AREA)
DE19691964632 1968-12-31 1969-12-23 Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterplatte zur Anwendung als Ausgangsmaterial bei diesem Verfahren Withdrawn DE1964632A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR182743 1968-12-31

Publications (1)

Publication Number Publication Date
DE1964632A1 true DE1964632A1 (de) 1970-07-09

Family

ID=8659750

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691964632 Withdrawn DE1964632A1 (de) 1968-12-31 1969-12-23 Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterplatte zur Anwendung als Ausgangsmaterial bei diesem Verfahren

Country Status (6)

Country Link
BE (1) BE743827A (https=)
CH (1) CH513520A (https=)
DE (1) DE1964632A1 (https=)
FR (1) FR1602834A (https=)
GB (1) GB1292346A (https=)
NL (1) NL6919465A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4841348A (en) * 1986-07-09 1989-06-20 Fuji Photo Film Co., Ltd. Solid state image pickup device
EP0285820A3 (en) * 1987-04-06 1990-06-13 International Business Machines Corporation Method and structure for identifying non-functional chip connect pads

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4841348A (en) * 1986-07-09 1989-06-20 Fuji Photo Film Co., Ltd. Solid state image pickup device
EP0285820A3 (en) * 1987-04-06 1990-06-13 International Business Machines Corporation Method and structure for identifying non-functional chip connect pads

Also Published As

Publication number Publication date
CH513520A (de) 1971-09-30
GB1292346A (en) 1972-10-11
BE743827A (https=) 1970-06-29
FR1602834A (https=) 1971-02-01
NL6919465A (https=) 1970-07-02

Similar Documents

Publication Publication Date Title
DE2160427C3 (https=)
DE1197549B (de) Halbleiterbauelement mit mindestens einem pn-UEbergang und mindestens einer Kontakt-elektrode auf einer Isolierschicht
DE2849511A1 (de) Photodetektor-anordnung
DE1764565C3 (de) Strahlungsempfindliches Halbleiterbauelement
DE2342637A1 (de) Zenerdiode mit drei elektrischen anschlussbereichen
DE1924726A1 (de) Feldeffektvorrichtung mit steuerbarem pn-UEbergang
DE1614300B2 (de) Feldeffekttransistor mit isolierter Steuerelektrode
DE2133979C3 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE2734997C2 (https=)
DE2754412A1 (de) Leistungstransistor und verfahren zu dessen herstellung
DE3637817A1 (de) Hochempfindliche photodiode
DE2236897B2 (https=)
DE1808406C3 (de) Strahlungsdetektor und Verfahren zu seiner Herstellung
DE2906122A1 (de) Transistor mit einer in seinem emittergebiet integrierten widerstandszone
AT392704B (de) Strahlungsempfindliche halbleiteranordnung
DE1964632A1 (de) Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterplatte zur Anwendung als Ausgangsmaterial bei diesem Verfahren
DE2203007A1 (de) Bipolar-Unipolar-Transistor
DE1614250C3 (de) Halbleiteranordnung mit Gruppen von sich kreuzenden Verbindungen
DE2607194C2 (de) Halbleiteranordnung
DE2403816C3 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE1564406C3 (de) Verfahren zur Herstellung einer Halbleiteranordnung und danach hergestellte Halbleiteranordnung
DE2521435C2 (de) Raumladungsbegrenzte Phototransistoranordnung
DE1957335A1 (de) Halbleiterbauelement mit einem strahlungsempfindlichen Halbleiterkoerper und Verfahren zu dessen Herstellung
DE2263075B2 (de) Elektrische spannungsversorgung fuer eine monolithisch integrierte halbleiteranordnung
DE2447289A1 (de) Photozelle

Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee