DE1949575B2 - Heterostruktur-Halbleiterlaserdiode - Google Patents
Heterostruktur-HalbleiterlaserdiodeInfo
- Publication number
- DE1949575B2 DE1949575B2 DE19691949575 DE1949575A DE1949575B2 DE 1949575 B2 DE1949575 B2 DE 1949575B2 DE 19691949575 DE19691949575 DE 19691949575 DE 1949575 A DE1949575 A DE 1949575A DE 1949575 B2 DE1949575 B2 DE 1949575B2
- Authority
- DE
- Germany
- Prior art keywords
- band
- heterojunction
- junction
- states
- band gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 239000000463 material Substances 0.000 claims description 27
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 26
- 239000002800 charge carrier Substances 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 11
- 238000005452 bending Methods 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims 1
- 210000003041 ligament Anatomy 0.000 claims 1
- 238000002347 injection Methods 0.000 description 18
- 239000007924 injection Substances 0.000 description 18
- 239000000370 acceptor Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 10
- 230000005855 radiation Effects 0.000 description 10
- 230000006798 recombination Effects 0.000 description 10
- 238000005215 recombination Methods 0.000 description 10
- 230000007704 transition Effects 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 6
- 230000001427 coherent effect Effects 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 235000013601 eggs Nutrition 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 241000251730 Chondrichthyes Species 0.000 description 1
- 101100102516 Clonostachys rogersoniana vern gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76690268A | 1968-10-11 | 1968-10-11 | |
| US78745968A | 1968-12-27 | 1968-12-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1949575A1 DE1949575A1 (de) | 1970-04-23 |
| DE1949575B2 true DE1949575B2 (de) | 1980-03-27 |
Family
ID=27117815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691949575 Ceased DE1949575B2 (de) | 1968-10-11 | 1969-10-01 | Heterostruktur-Halbleiterlaserdiode |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4947316B1 (OSRAM) |
| BE (1) | BE739896A (OSRAM) |
| CH (1) | CH502702A (OSRAM) |
| DE (1) | DE1949575B2 (OSRAM) |
| FR (1) | FR2020380A1 (OSRAM) |
| GB (1) | GB1288082A (OSRAM) |
| NL (1) | NL159828B (OSRAM) |
| SE (1) | SE374850B (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3758875A (en) * | 1970-05-01 | 1973-09-11 | Bell Telephone Labor Inc | Double heterostructure junction lasers |
| DE2042517A1 (de) * | 1970-08-27 | 1972-03-02 | Pilkuhn M | Halbleiterlaser |
| DE3043581A1 (de) * | 1980-11-19 | 1982-06-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiteranordnung |
| CN119765014B (zh) * | 2024-12-13 | 2025-10-17 | 中国科学院半导体研究所 | 一种半导体激光器及其制备方法 |
-
1969
- 1969-10-01 SE SE1350769D patent/SE374850B/xx unknown
- 1969-10-01 DE DE19691949575 patent/DE1949575B2/de not_active Ceased
- 1969-10-06 BE BE739896D patent/BE739896A/xx not_active IP Right Cessation
- 1969-10-07 FR FR6934184A patent/FR2020380A1/fr active Pending
- 1969-10-10 NL NL6915370A patent/NL159828B/xx not_active IP Right Cessation
- 1969-10-10 CH CH1526869A patent/CH502702A/de not_active IP Right Cessation
- 1969-10-10 GB GB1288082D patent/GB1288082A/en not_active Expired
- 1969-10-11 JP JP8074669A patent/JPS4947316B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE374850B (OSRAM) | 1975-03-17 |
| DE1949575A1 (de) | 1970-04-23 |
| NL159828B (nl) | 1979-03-15 |
| FR2020380A1 (OSRAM) | 1970-07-10 |
| GB1288082A (OSRAM) | 1972-09-06 |
| JPS4947316B1 (OSRAM) | 1974-12-14 |
| NL6915370A (OSRAM) | 1970-04-14 |
| BE739896A (OSRAM) | 1970-03-16 |
| CH502702A (de) | 1971-01-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8235 | Patent refused |