DE1947060A1 - Verfahren zur Herstellung von ohmschen Kontakten an einem Halbleitersubstrat - Google Patents
Verfahren zur Herstellung von ohmschen Kontakten an einem HalbleitersubstratInfo
- Publication number
- DE1947060A1 DE1947060A1 DE19691947060 DE1947060A DE1947060A1 DE 1947060 A1 DE1947060 A1 DE 1947060A1 DE 19691947060 DE19691947060 DE 19691947060 DE 1947060 A DE1947060 A DE 1947060A DE 1947060 A1 DE1947060 A1 DE 1947060A1
- Authority
- DE
- Germany
- Prior art keywords
- weight
- percent
- alloy composition
- lanthanide
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000956 alloy Substances 0.000 claims description 39
- 229910045601 alloy Inorganic materials 0.000 claims description 32
- 239000000203 mixture Substances 0.000 claims description 23
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 16
- 150000002602 lanthanoids Chemical class 0.000 claims description 16
- 238000002844 melting Methods 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 230000005294 ferromagnetic effect Effects 0.000 claims description 4
- 229910000967 As alloy Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 229910000743 fusible alloy Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052798 chalcogen Inorganic materials 0.000 description 4
- 150000001787 chalcogens Chemical class 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001786 chalcogen compounds Chemical class 0.000 description 1
- -1 chalcogenide compound Chemical class 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000009991 pite Nutrition 0.000 description 1
- 244000293655 pite Species 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
Landscapes
- Conductive Materials (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76090068A | 1968-09-19 | 1968-09-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1947060A1 true DE1947060A1 (de) | 1970-03-26 |
Family
ID=25060509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691947060 Pending DE1947060A1 (de) | 1968-09-19 | 1969-09-17 | Verfahren zur Herstellung von ohmschen Kontakten an einem Halbleitersubstrat |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3574676A (https=) |
| DE (1) | DE1947060A1 (https=) |
| FR (1) | FR2018388A1 (https=) |
| GB (1) | GB1225105A (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3656029A (en) * | 1970-12-31 | 1972-04-11 | Ibm | BISTABLE RESISTOR OF EUROPIUM OXIDE, EUROPIUM SULFIDE, OR EUROPIUM SELENIUM DOPED WITH THREE d TRANSITION OR VA ELEMENT |
| JPS5295972A (en) * | 1976-02-09 | 1977-08-12 | Hitachi Ltd | Semiconductor element |
| US4577322A (en) * | 1983-10-19 | 1986-03-18 | General Motors Corporation | Lead-ytterbium-tin telluride heterojunction semiconductor laser |
| US4598338A (en) * | 1983-12-21 | 1986-07-01 | The United States Of America As Represented By The United States Department Of Energy | Reusable fast opening switch |
| US4608694A (en) * | 1983-12-27 | 1986-08-26 | General Motors Corporation | Lead-europium selenide-telluride heterojunction semiconductor laser |
-
1968
- 1968-09-19 US US760900A patent/US3574676A/en not_active Expired - Lifetime
-
1969
- 1969-08-19 FR FR6928453A patent/FR2018388A1/fr not_active Withdrawn
- 1969-08-27 GB GB1225105D patent/GB1225105A/en not_active Expired
- 1969-09-17 DE DE19691947060 patent/DE1947060A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2018388A1 (https=) | 1970-05-29 |
| GB1225105A (https=) | 1971-03-17 |
| US3574676A (en) | 1971-04-13 |
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