DE1942897A1 - Speicherplatte fuer eine Kameraroehre - Google Patents
Speicherplatte fuer eine KameraroehreInfo
- Publication number
- DE1942897A1 DE1942897A1 DE19691942897 DE1942897A DE1942897A1 DE 1942897 A1 DE1942897 A1 DE 1942897A1 DE 19691942897 DE19691942897 DE 19691942897 DE 1942897 A DE1942897 A DE 1942897A DE 1942897 A1 DE1942897 A1 DE 1942897A1
- Authority
- DE
- Germany
- Prior art keywords
- plate
- storage disk
- zone
- disk according
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003860 storage Methods 0.000 title claims description 39
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 239000002019 doping agent Substances 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229940007424 antimony trisulfide Drugs 0.000 description 1
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 description 1
- YGUXVEHFNLRTTD-UHFFFAOYSA-N bis(sulfanylidene)antimony Chemical compound S=[Sb]=S YGUXVEHFNLRTTD-UHFFFAOYSA-N 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Light Receiving Elements (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75485068A | 1968-08-23 | 1968-08-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1942897A1 true DE1942897A1 (de) | 1970-02-26 |
Family
ID=25036628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691942897 Pending DE1942897A1 (de) | 1968-08-23 | 1969-08-22 | Speicherplatte fuer eine Kameraroehre |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3585430A (enrdf_load_stackoverflow) |
| JP (1) | JPS4741047B1 (enrdf_load_stackoverflow) |
| DE (1) | DE1942897A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2016269A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1279276A (enrdf_load_stackoverflow) |
| NL (1) | NL6912847A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3786294A (en) * | 1971-02-22 | 1974-01-15 | Gen Electric | Protective coating for diode array targets |
| US3965385A (en) * | 1974-01-28 | 1976-06-22 | Raytheon Company | Semiconductor heterojunction television imaging tube |
| US4103203A (en) | 1974-09-09 | 1978-07-25 | Rca Corporation | Wafer mounting structure for pickup tube |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL290119A (enrdf_load_stackoverflow) * | 1963-03-12 | |||
| US3403278A (en) * | 1967-02-07 | 1968-09-24 | Bell Telephone Labor Inc | Camera tube target including n-type semiconductor having higher concentration of deep donors than shallow donors |
| US3458782A (en) * | 1967-10-18 | 1969-07-29 | Bell Telephone Labor Inc | Electron beam charge storage device employing diode array and establishing an impurity gradient in order to reduce the surface recombination velocity in a region of electron-hole pair production |
| US3474285A (en) * | 1968-03-27 | 1969-10-21 | Bell Telephone Labor Inc | Information storage devices |
-
1968
- 1968-08-23 US US754850A patent/US3585430A/en not_active Expired - Lifetime
-
1969
- 1969-08-21 FR FR6928660A patent/FR2016269A1/fr not_active Withdrawn
- 1969-08-22 GB GB42003/69A patent/GB1279276A/en not_active Expired
- 1969-08-22 DE DE19691942897 patent/DE1942897A1/de active Pending
- 1969-08-22 NL NL6912847A patent/NL6912847A/xx unknown
-
1972
- 1972-10-17 JP JP6682469A patent/JPS4741047B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1279276A (en) | 1972-06-28 |
| US3585430A (en) | 1971-06-15 |
| JPS4741047B1 (enrdf_load_stackoverflow) | 1972-10-17 |
| NL6912847A (enrdf_load_stackoverflow) | 1970-02-25 |
| FR2016269A1 (enrdf_load_stackoverflow) | 1970-05-08 |
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