DE1931149B2 - - Google Patents

Info

Publication number
DE1931149B2
DE1931149B2 DE1931149A DE1931149A DE1931149B2 DE 1931149 B2 DE1931149 B2 DE 1931149B2 DE 1931149 A DE1931149 A DE 1931149A DE 1931149 A DE1931149 A DE 1931149A DE 1931149 B2 DE1931149 B2 DE 1931149B2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE1931149A
Other versions
DE1931149A1 (de
Inventor
John M. Manhattan Beach Calif. Gault (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of DE1931149A1 publication Critical patent/DE1931149A1/de
Publication of DE1931149B2 publication Critical patent/DE1931149B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
DE19691931149 1968-06-19 1969-06-19 Triac-Halbleiteranordnung und Verfahren zu ihrer Herstellung Withdrawn DE1931149A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73822368A 1968-06-19 1968-06-19

Publications (2)

Publication Number Publication Date
DE1931149A1 DE1931149A1 (de) 1970-01-02
DE1931149B2 true DE1931149B2 (de) 1975-11-27

Family

ID=24967098

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691931149 Withdrawn DE1931149A1 (de) 1968-06-19 1969-06-19 Triac-Halbleiteranordnung und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (1) US3549961A (de)
DE (1) DE1931149A1 (de)
GB (1) GB1220306A (de)
SE (1) SE372659B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2805813A1 (de) * 1978-02-11 1979-08-16 Semikron Gleichrichterbau Halbleiteranordnung

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700982A (en) * 1968-08-12 1972-10-24 Int Rectifier Corp Controlled rectifier having gate electrode which extends across the gate and cathode layers
DE2141627C3 (de) * 1971-08-19 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
DE2146178C3 (de) * 1971-09-15 1979-09-27 Brown, Boveri & Cie Ag, 6800 Mannheim Thyristor mit Steuerstromverstärkung
US3967308A (en) * 1971-10-01 1976-06-29 Hitachi, Ltd. Semiconductor controlled rectifier
US3725750A (en) * 1972-02-15 1973-04-03 Bbc Brown Boveri & Cie Semiconductor disc having tapered edge recess filled with insulation compound and upstanding cylindrical insulating ring embedded in compound to increase avalanche breakdown voltage
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
US3787719A (en) * 1972-11-10 1974-01-22 Westinghouse Brake & Signal Triac
FR2274140A1 (fr) * 1974-06-04 1976-01-02 Alsthom Cgee Thyristor a conduction inverse
US4021837A (en) * 1975-04-21 1977-05-03 Hutson Jearld L Symmetrical semiconductor switch having carrier lifetime degrading structure
US4238761A (en) * 1975-05-27 1980-12-09 Westinghouse Electric Corp. Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
US4638342A (en) * 1982-09-17 1987-01-20 International Business Machines Corporation Space charge modulation device
FR2956923A1 (fr) * 2010-03-01 2011-09-02 St Microelectronics Tours Sas Composant de puissance vertical haute tension
CN110521000A (zh) * 2017-04-24 2019-11-29 力特半导体（无锡）有限公司 改进的场阻止晶闸管结构及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2805813A1 (de) * 1978-02-11 1979-08-16 Semikron Gleichrichterbau Halbleiteranordnung

Also Published As

Publication number Publication date
GB1220306A (en) 1971-01-27
DE1931149A1 (de) 1970-01-02
US3549961A (en) 1970-12-22
SE372659B (de) 1974-12-23

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Legal Events

Date Code Title Description
BHN Withdrawal