SE372659B - - Google Patents
Info
- Publication number
- SE372659B SE372659B SE6908734A SE873469A SE372659B SE 372659 B SE372659 B SE 372659B SE 6908734 A SE6908734 A SE 6908734A SE 873469 A SE873469 A SE 873469A SE 372659 B SE372659 B SE 372659B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73822368A | 1968-06-19 | 1968-06-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE372659B true SE372659B (xx) | 1974-12-23 |
Family
ID=24967098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE6908734A SE372659B (xx) | 1968-06-19 | 1969-06-18 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3549961A (xx) |
DE (1) | DE1931149A1 (xx) |
GB (1) | GB1220306A (xx) |
SE (1) | SE372659B (xx) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3700982A (en) * | 1968-08-12 | 1972-10-24 | Int Rectifier Corp | Controlled rectifier having gate electrode which extends across the gate and cathode layers |
DE2141627C3 (de) * | 1971-08-19 | 1979-06-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
DE2146178C3 (de) * | 1971-09-15 | 1979-09-27 | Brown, Boveri & Cie Ag, 6800 Mannheim | Thyristor mit Steuerstromverstärkung |
US3967308A (en) * | 1971-10-01 | 1976-06-29 | Hitachi, Ltd. | Semiconductor controlled rectifier |
US3725750A (en) * | 1972-02-15 | 1973-04-03 | Bbc Brown Boveri & Cie | Semiconductor disc having tapered edge recess filled with insulation compound and upstanding cylindrical insulating ring embedded in compound to increase avalanche breakdown voltage |
US3881179A (en) * | 1972-08-23 | 1975-04-29 | Motorola Inc | Zener diode structure having three terminals |
US3787719A (en) * | 1972-11-10 | 1974-01-22 | Westinghouse Brake & Signal | Triac |
FR2274140A1 (fr) * | 1974-06-04 | 1976-01-02 | Alsthom Cgee | Thyristor a conduction inverse |
US4021837A (en) * | 1975-04-21 | 1977-05-03 | Hutson Jearld L | Symmetrical semiconductor switch having carrier lifetime degrading structure |
US4238761A (en) * | 1975-05-27 | 1980-12-09 | Westinghouse Electric Corp. | Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode |
JPS52146570A (en) * | 1976-05-31 | 1977-12-06 | Toshiba Corp | Reverse conducting thyristor |
DE2805813C3 (de) * | 1978-02-11 | 1984-02-23 | Semikron Gesellschaft Fuer Gleichrichterbau U. Elektronik Mbh, 8500 Nuernberg | l.PT 23.02.84 Halbleiteranordnung SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg, DE |
US4638342A (en) * | 1982-09-17 | 1987-01-20 | International Business Machines Corporation | Space charge modulation device |
FR2956923A1 (fr) * | 2010-03-01 | 2011-09-02 | St Microelectronics Tours Sas | Composant de puissance vertical haute tension |
EP3616242A4 (en) * | 2017-04-24 | 2020-11-25 | Littelfuse Semiconductor (Wuxi) Co., Ltd. | THYRISTOR STRUCTURE WITH UPGRADED FIELD PANEL AND MANUFACTURING PROCESS |
-
1968
- 1968-06-19 US US738223A patent/US3549961A/en not_active Expired - Lifetime
-
1969
- 1969-06-09 GB GB29000/69A patent/GB1220306A/en not_active Expired
- 1969-06-18 SE SE6908734A patent/SE372659B/xx unknown
- 1969-06-19 DE DE19691931149 patent/DE1931149A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE1931149B2 (xx) | 1975-11-27 |
US3549961A (en) | 1970-12-22 |
DE1931149A1 (de) | 1970-01-02 |
GB1220306A (en) | 1971-01-27 |