DE1925971A1 - Halbleiterdetektor fuer Elektronen - Google Patents

Halbleiterdetektor fuer Elektronen

Info

Publication number
DE1925971A1
DE1925971A1 DE19691925971 DE1925971A DE1925971A1 DE 1925971 A1 DE1925971 A1 DE 1925971A1 DE 19691925971 DE19691925971 DE 19691925971 DE 1925971 A DE1925971 A DE 1925971A DE 1925971 A1 DE1925971 A1 DE 1925971A1
Authority
DE
Germany
Prior art keywords
semiconductor detector
layer
electrons
vapor
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691925971
Other languages
German (de)
English (en)
Inventor
Glasow Dipl-Phys Peter
Banerjee Dipl-Phys D Prabuddha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of DE1925971A1 publication Critical patent/DE1925971A1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • EFIXED CONSTRUCTIONS
    • E04BUILDING
    • E04GSCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
    • E04G11/00Forms, shutterings, or falsework for making walls, floors, ceilings, or roofs
    • E04G11/06Forms, shutterings, or falsework for making walls, floors, ceilings, or roofs for walls, e.g. curved end panels for wall shutterings; filler elements for wall shutterings; shutterings for vertical ducts
    • E04G11/08Forms, which are completely dismantled after setting of the concrete and re-built for next pouring
    • E04G11/12Forms, which are completely dismantled after setting of the concrete and re-built for next pouring of elements and beams which are mounted during erection of the shuttering to brace or couple the elements
    • EFIXED CONSTRUCTIONS
    • E04BUILDING
    • E04GSCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
    • E04G11/00Forms, shutterings, or falsework for making walls, floors, ceilings, or roofs
    • E04G11/36Forms, shutterings, or falsework for making walls, floors, ceilings, or roofs for floors, ceilings, or roofs of plane or curved surfaces end formpanels for floor shutterings
    • E04G11/48Supporting structures for shutterings or frames for floors or roofs
    • E04G11/50Girders, beams, or the like as supporting members for forms
    • E04G11/54Girders, beams, or the like as supporting members for forms of extensible type, with or without adjustable supporting shoes, fishplates, or the like
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Mechanical Engineering (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Light Receiving Elements (AREA)
DE19691925971 1968-05-30 1969-05-21 Halbleiterdetektor fuer Elektronen Pending DE1925971A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH804768 1968-05-30

Publications (1)

Publication Number Publication Date
DE1925971A1 true DE1925971A1 (de) 1970-01-08

Family

ID=4334318

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691925971 Pending DE1925971A1 (de) 1968-05-30 1969-05-21 Halbleiterdetektor fuer Elektronen

Country Status (3)

Country Link
DE (1) DE1925971A1 (enExample)
FR (1) FR2009972A1 (enExample)
GB (1) GB1266431A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6486476B1 (en) 1998-12-22 2002-11-26 Hitachi, Ltd. Semiconductor radiation detector and manufacture thereof

Also Published As

Publication number Publication date
FR2009972A1 (fr) 1970-02-13
FR2009972B1 (enExample) 1973-12-21
GB1266431A (enExample) 1972-03-08

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971