FR2009972A1 - Detecteur d'electrons - Google Patents

Detecteur d'electrons

Info

Publication number
FR2009972A1
FR2009972A1 FR6917360A FR6917360A FR2009972A1 FR 2009972 A1 FR2009972 A1 FR 2009972A1 FR 6917360 A FR6917360 A FR 6917360A FR 6917360 A FR6917360 A FR 6917360A FR 2009972 A1 FR2009972 A1 FR 2009972A1
Authority
FR
France
Prior art keywords
electron detector
electron
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR6917360A
Other languages
English (en)
French (fr)
Other versions
FR2009972B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of FR2009972A1 publication Critical patent/FR2009972A1/fr
Application granted granted Critical
Publication of FR2009972B1 publication Critical patent/FR2009972B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • EFIXED CONSTRUCTIONS
    • E04BUILDING
    • E04GSCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
    • E04G11/00Forms, shutterings, or falsework for making walls, floors, ceilings, or roofs
    • E04G11/06Forms, shutterings, or falsework for making walls, floors, ceilings, or roofs for walls, e.g. curved end panels for wall shutterings; filler elements for wall shutterings; shutterings for vertical ducts
    • E04G11/08Forms, which are completely dismantled after setting of the concrete and re-built for next pouring
    • E04G11/12Forms, which are completely dismantled after setting of the concrete and re-built for next pouring of elements and beams which are mounted during erection of the shuttering to brace or couple the elements
    • EFIXED CONSTRUCTIONS
    • E04BUILDING
    • E04GSCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
    • E04G11/00Forms, shutterings, or falsework for making walls, floors, ceilings, or roofs
    • E04G11/36Forms, shutterings, or falsework for making walls, floors, ceilings, or roofs for floors, ceilings, or roofs of plane or curved surfaces end formpanels for floor shutterings
    • E04G11/48Supporting structures for shutterings or frames for floors or roofs
    • E04G11/50Girders, beams, or the like as supporting members for forms
    • E04G11/54Girders, beams, or the like as supporting members for forms of extensible type, with or without adjustable supporting shoes, fishplates, or the like
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Mechanical Engineering (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Light Receiving Elements (AREA)
FR6917360A 1968-05-30 1969-05-28 Detecteur d'electrons Granted FR2009972A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH804768 1968-05-30

Publications (2)

Publication Number Publication Date
FR2009972A1 true FR2009972A1 (fr) 1970-02-13
FR2009972B1 FR2009972B1 (enExample) 1973-12-21

Family

ID=4334318

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6917360A Granted FR2009972A1 (fr) 1968-05-30 1969-05-28 Detecteur d'electrons

Country Status (3)

Country Link
DE (1) DE1925971A1 (enExample)
FR (1) FR2009972A1 (enExample)
GB (1) GB1266431A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6486476B1 (en) 1998-12-22 2002-11-26 Hitachi, Ltd. Semiconductor radiation detector and manufacture thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
FR2009972B1 (enExample) 1973-12-21
DE1925971A1 (de) 1970-01-08
GB1266431A (enExample) 1972-03-08

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Legal Events

Date Code Title Description
ST Notification of lapse