DE1809303A1 - Verfahren zur Herstellung lichtemittierender Halbleiterbauelemente - Google Patents

Verfahren zur Herstellung lichtemittierender Halbleiterbauelemente

Info

Publication number
DE1809303A1
DE1809303A1 DE19681809303 DE1809303A DE1809303A1 DE 1809303 A1 DE1809303 A1 DE 1809303A1 DE 19681809303 DE19681809303 DE 19681809303 DE 1809303 A DE1809303 A DE 1809303A DE 1809303 A1 DE1809303 A1 DE 1809303A1
Authority
DE
Germany
Prior art keywords
radiation
heat treatment
temperature
diode
period
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19681809303
Other languages
German (de)
English (en)
Inventor
Aare Onton
Lorenz Max Rudolph
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE1809303A1 publication Critical patent/DE1809303A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE19681809303 1967-12-01 1968-11-16 Verfahren zur Herstellung lichtemittierender Halbleiterbauelemente Pending DE1809303A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68726467A 1967-12-01 1967-12-01

Publications (1)

Publication Number Publication Date
DE1809303A1 true DE1809303A1 (de) 1969-08-14

Family

ID=24759731

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681809303 Pending DE1809303A1 (de) 1967-12-01 1968-11-16 Verfahren zur Herstellung lichtemittierender Halbleiterbauelemente

Country Status (5)

Country Link
US (1) US3540941A (OSRAM)
JP (1) JPS5128995B1 (OSRAM)
DE (1) DE1809303A1 (OSRAM)
FR (1) FR1593655A (OSRAM)
GB (1) GB1173850A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3619304A (en) * 1968-08-30 1971-11-09 Tokyo Shibaura Electric Co Method of manufacturing gallium phosphide electro luminescent diodes
US3951699A (en) * 1973-02-22 1976-04-20 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing a gallium phosphide red-emitting device
JPS5137915B2 (OSRAM) * 1973-10-19 1976-10-19
US4609409A (en) * 1980-10-08 1986-09-02 Murata Manufacturing Co., Ltd. Process of heat treating copper film on ceramic body and heat treating apparatus therefor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3365630A (en) * 1965-01-29 1968-01-23 Bell Telephone Labor Inc Electroluminescent gallium phosphide crystal with three dopants
US3470038A (en) * 1967-02-17 1969-09-30 Bell Telephone Labor Inc Electroluminescent p-n junction device and preparation thereof

Also Published As

Publication number Publication date
JPS5128995B1 (OSRAM) 1976-08-23
US3540941A (en) 1970-11-17
GB1173850A (en) 1969-12-10
FR1593655A (OSRAM) 1970-06-01

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Legal Events

Date Code Title Description
OHW Rejection