DE1800734A1 - Halbleiter mit elektrolumineszenten Eigenschaften - Google Patents
Halbleiter mit elektrolumineszenten EigenschaftenInfo
- Publication number
- DE1800734A1 DE1800734A1 DE19681800734 DE1800734A DE1800734A1 DE 1800734 A1 DE1800734 A1 DE 1800734A1 DE 19681800734 DE19681800734 DE 19681800734 DE 1800734 A DE1800734 A DE 1800734A DE 1800734 A1 DE1800734 A1 DE 1800734A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- intermediate layer
- layer
- semiconductor material
- compensated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 239000000463 material Substances 0.000 claims description 26
- 239000012535 impurity Substances 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- -1 lead sulfide Chemical class 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6343067 | 1967-10-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1800734A1 true DE1800734A1 (de) | 1969-05-14 |
Family
ID=13229036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19681800734 Pending DE1800734A1 (de) | 1967-10-02 | 1968-10-02 | Halbleiter mit elektrolumineszenten Eigenschaften |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1800734A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1585732A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2420741A1 (de) * | 1973-05-28 | 1975-01-02 | Schores Iwanowitsch Alferow | Leuchtdiode und deren herstellungsverfahren |
-
1968
- 1968-10-01 FR FR1585732D patent/FR1585732A/fr not_active Expired
- 1968-10-02 DE DE19681800734 patent/DE1800734A1/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2420741A1 (de) * | 1973-05-28 | 1975-01-02 | Schores Iwanowitsch Alferow | Leuchtdiode und deren herstellungsverfahren |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1585732A (enrdf_load_stackoverflow) | 1970-01-30 |
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