DE1789155B1 - Leistungshalbleiterbauelement und verfahren zum herstellen - Google Patents
Leistungshalbleiterbauelement und verfahren zum herstellenInfo
- Publication number
- DE1789155B1 DE1789155B1 DE19631789155 DE1789155A DE1789155B1 DE 1789155 B1 DE1789155 B1 DE 1789155B1 DE 19631789155 DE19631789155 DE 19631789155 DE 1789155 A DE1789155 A DE 1789155A DE 1789155 B1 DE1789155 B1 DE 1789155B1
- Authority
- DE
- Germany
- Prior art keywords
- junction
- doped zone
- semiconductor component
- layer
- power semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title description 5
- 230000000903 blocking effect Effects 0.000 claims description 15
- 230000001154 acute effect Effects 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 63
- 230000004888 barrier function Effects 0.000 description 15
- 230000007704 transition Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH202162A CH414866A (de) | 1962-02-20 | 1962-02-20 | Aus p- und n-Schichten aufgebautes Gleichrichterelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1789155B1 true DE1789155B1 (de) | 1976-03-11 |
Family
ID=4224045
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19631789155 Ceased DE1789155B1 (de) | 1962-02-20 | 1963-02-18 | Leistungshalbleiterbauelement und verfahren zum herstellen |
| DE1963S0083800 Granted DE1439215B2 (de) | 1962-02-20 | 1963-02-18 | Leistungshalbleiterbauelement und Verfahren zum Herstellen desselben |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1963S0083800 Granted DE1439215B2 (de) | 1962-02-20 | 1963-02-18 | Leistungshalbleiterbauelement und Verfahren zum Herstellen desselben |
Country Status (6)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6603372A (US06262066-20010717-C00422.png) * | 1965-03-25 | 1966-09-26 | ||
| DE1589529C3 (de) * | 1967-06-19 | 1982-10-14 | Robert Bosch Gmbh, 7000 Stuttgart | Planartransistor |
| US4110780A (en) * | 1973-07-06 | 1978-08-29 | Bbc Brown Boveri & Company, Limited | Semiconductor power component |
| DE7328984U (de) * | 1973-07-06 | 1975-05-15 | Bbc Ag Brown Boveri & Cie | Leistungshalbleiterbauelement |
| CH566643A5 (US06262066-20010717-C00422.png) * | 1973-10-11 | 1975-09-15 | Bbc Brown Boveri & Cie | |
| DE2358937C3 (de) * | 1973-11-27 | 1976-07-15 | Licentia Gmbh | Thyristor fuer hochspannung im kilovoltbereich |
| DE102021116206B3 (de) * | 2021-06-23 | 2022-09-29 | Infineon Technologies Bipolar Gmbh & Co. Kg | Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements |
-
0
- BE BE628619D patent/BE628619A/xx unknown
-
1962
- 1962-02-20 CH CH202162A patent/CH414866A/de unknown
-
1963
- 1963-02-18 DE DE19631789155 patent/DE1789155B1/de not_active Ceased
- 1963-02-18 DE DE1963S0083800 patent/DE1439215B2/de active Granted
- 1963-02-18 AT AT123263A patent/AT255569B/de active
- 1963-02-20 FR FR925466A patent/FR1360744A/fr not_active Expired
- 1963-02-20 GB GB685263A patent/GB1031043A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE628619A (US06262066-20010717-C00422.png) | |
| CH414866A (de) | 1966-06-15 |
| DE1439215A1 (de) | 1968-10-17 |
| AT255569B (de) | 1967-07-10 |
| FR1360744A (fr) | 1964-05-15 |
| GB1031043A (en) | 1966-05-25 |
| DE1439215B2 (de) | 1973-10-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BF | Willingness to grant licences | ||
| 8235 | Patent refused |