DE1764099A1 - Device with a getter ion pump and getter ion pump for such a device - Google Patents

Description

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No.

Device ndt an aetterionenpump and aetterionenpump for such a device ^

The invention "relates to an aetterionen pump, in the electrons, which cause the ionization of the existing oasis, under the influence of electrical high-frequency fields pendulum motion auoführon, and where Selcunda'relektrononvervielfaohung occurs.

The invention further relates to one for one Dor-like device includes an ion pump.

An ion pump of the type mentioned in the introduction is known from D ₁ A. 3, 1, "22.8 # 75O i ⁰ *. The secondary electrononemiBaloniolokfcrode surrounds the space in which atomization occurs. This results in this Electrode is either deafened, or bodeoct with atomized material. In both pa'llii, the eecund firemiasion coefficient is lowered

1098 1 6 / OUüO '. ■. ^

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PHII. 2731. - 2 -

Arrangement therefore essentially formed by ionization of the öasoe. This has the consequence that with decreasing gas pressure the electron formation strongly decreases "

The invention now aims to create a device which offers advantages over the known device »

In a device with an oetter ion pump, in which the electrons that cause ionization of the existing qaae under the inflow of electrical high-frequency panels to carry out pendulum movements, and wherein secondary electron multiplication occurs According to the invention the pump has at least three electrodes, one of which the sueaeren are plate-shaped, and the adjacent electrode is gittorforraig, with the HP-PeId between the lattice-shaped electrode and one of the plate-shaped electrodes for electrons with the energies that are generally preserved in the HF field Has secondary remission coefficients greater than 1, is present, where the amplitude and frequency of the RF field »because of the distance, over denaioh this field, have such a wait that the generated ground electrons again after about a given period return to the secondary emission electrode, and with sswis alien the grid and the other plate-shaped electrode an electrostatic Field is present so that the ions are after each electrode be accelerated and cause atomization there.

According to the arrangement according to the invention, it is achieved that nahhu no ions hit the DekundSremliaionaeohioht because these im HF field by whore of great mass absorb only so little energy know and because ausuardom dae electrostatic field somewhat duroh that (jitter can grasp “Although with this arrangement no oh

1Q9816 / Q9U0

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. 2731.

some sputtering occurs through the grid to the secondary ion electrode, but the influence of this atomization can be kept small by the fact that the surface of this electrodo compared to 4er ion-collecting electrode is made large, for example, naoh of the invention oine circular cylindrical arrangement chosen by v.erdon, in the the secondary emission electrode is the larger one and the ion collecting electrode has the smaller diameter · The disadvantage of the low bottom of the sputtered material on the secondary emission electrode can thereby be almost completely avoided according to the invention, daee z-wis oh on the lattice-shaped electrode and the ion collector ek trod « an electrode is arranged, the aua plate-shaped parts, parafcr IeI aura electrootatic fold exists between the two surrounding electrodes, and the voltage is lower between this electrode and the grid-shaped electrodo is made significantly smaller, ale between the grid-shaped electrode and the ion collecting electrode. This additional electrode is somewhat atomized by the low speed of the ions themselves and, on the other hand, by the geometry In the arrangement, the atomized material of the ion trapping electrode intercept.

Preferably, the ion trapping electrode is near the Invention at a temperature of liquid air or liquid Nitrogen cooled.

One embodiment of the invention is in the reward and is described in more detail below. Ea aeigenl

Pig. i a cut perpendicular Bur Aohse an ion pump for a device according to the invention,

- ■ PiC. 2 a sonhood parallel to the same Aohee. 1098 16 / 09UO

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I »Ed. 1 1st but one half and in Fiβ. 2 only one Course Stöok the length shown

In the figures, 3 is one with an oxidized

Silver existing Sohloht 2 covered coat made of stainless steel,, A grid-shaped electrode is indicated by 4. Inside the grating 4 there is a strip 11 arranged on the inside roetfreieta steel consisting of «electrode 10» The inner electrode consists from a Sohioht Titan 8 on one out. stainless steel existing Cylinder in which there is a KohlflÜaeigkeit 14, in this case liquid nitrogen.

The diameters of the electrodes 2, 4 and δ are about 24 cm, 18 <m b'ev «5 cn · The ratios are about massta * blioh, so that the dimensions of the electrode 11 can be derived therefrom.

A voltage with a frequency of about 40 MSs and an amplitude Ton about 150 V is applied between electrodes 2 and 4 placed. In this case, the electrode 2 describes emitted electrons Orbits, 6 in the figure, only one period in time, so that Ver ~ Titlfaohung occurs.

If a backing pump has reduced the vacuum to about 10%, the application of the high-frequency voltage opening of the discharge and thus hectronic emissions of electrode 2 can occur 8 with respect to the electrode 4 negative potentials of 5OÜ V b * w. 3000 V. Titanium, which is in the first place from the electrode 8, is almost completely collected on the electrode 10. In the case of anehee * de aasdruokes, the electron flow drops between 2 \ mL 4 until a balance occurs at a pressure of 10 Torr, since the amount of electrons in the oasis is then low

or no longer has any influence and only the secondary emission is decisive · 1098 16/0900

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Claims (3)

PATEHTAHSHUFFES, 1 / device with a quaternary ion pump in which the electrons, veruraaohen the ionization of the existing oasis, under the Influence of high-frequency electrical oscillations, and wherein secondary electron multiplication occurs, characterized in that that the pump contains at least three electrodes, the outer ones of which are plate-shaped and the electrode in between lattice shape, with the HF-PeId between the lattice-shaped electrode and one of the plate-shaped electrodes that are used for electrons the energies that are obtained on average in the HP-PeId Has secondary emission coefficients greater than 1 is present, where the amplitude and frequency of the »RF field due to the distances», over which si ob, the field extends, has such a value that the generated secondary electrons for about a whole period the secondary remission electrode aurSokkehrtn, and where awisohen den Grid and the other plate-shaped electrode an electrostatic » Field is present, ao daea accelerates the ions towards each electrode and cause atomization there 2. Device naoh claim 1, characterized in that that the arrangement is lcreiaeylindrisoh, with the secondary chemical ion electrode the larger and the ion-collecting electrodes in the smaller ones Has Durohmeeoer. 3. Device naoh claim 1 or 2, characterized gekennzeiohr net, daoo the ionon collecting electrode by means of a volatilized öas is honored. 1098 16/0900 BADÖftlGINAL PHH. 2731. 4 device according to claim 1, 2 or 3, characterized in that that the lattice-shaped electrode and the ion-collecting electrode are identical an electrode is arranged, which consists of plate-shaped parts, parallel to the electrostatic field, between the two surrounding electrodes and the voltage difference between this electrode and the gitterformigeη electrode are significantly smaller is made than between the smooth electrode and the ion capture electrode, BATH ORIGINAL 109816/0900