DE1564545C3 - Asymmetrische Halbleiter-Kippdiode - Google Patents

Asymmetrische Halbleiter-Kippdiode

Info

Publication number
DE1564545C3
DE1564545C3 DE1564545A DE1564545A DE1564545C3 DE 1564545 C3 DE1564545 C3 DE 1564545C3 DE 1564545 A DE1564545 A DE 1564545A DE 1564545 A DE1564545 A DE 1564545A DE 1564545 C3 DE1564545 C3 DE 1564545C3
Authority
DE
Germany
Prior art keywords
zone
semiconductor
diode
layer
breakover diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1564545A
Other languages
German (de)
English (en)
Other versions
DE1564545B2 (de
DE1564545A1 (de
Inventor
Harry Forty Fort Pa. Weisberg (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1564545A1 publication Critical patent/DE1564545A1/de
Publication of DE1564545B2 publication Critical patent/DE1564545B2/de
Application granted granted Critical
Publication of DE1564545C3 publication Critical patent/DE1564545C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
DE1564545A 1965-11-16 1966-11-15 Asymmetrische Halbleiter-Kippdiode Expired DE1564545C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50802865A 1965-11-16 1965-11-16

Publications (3)

Publication Number Publication Date
DE1564545A1 DE1564545A1 (de) 1970-05-14
DE1564545B2 DE1564545B2 (de) 1971-04-22
DE1564545C3 true DE1564545C3 (de) 1974-09-26

Family

ID=24021082

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1564545A Expired DE1564545C3 (de) 1965-11-16 1966-11-15 Asymmetrische Halbleiter-Kippdiode

Country Status (6)

Country Link
US (1) US3427509A (enExample)
DE (1) DE1564545C3 (enExample)
FR (1) FR1499074A (enExample)
GB (1) GB1151517A (enExample)
NL (1) NL6616095A (enExample)
SE (1) SE322846B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4262295A (en) * 1978-01-30 1981-04-14 Hitachi, Ltd. Semiconductor device
DE19604890B4 (de) * 1996-02-10 2007-01-25 Robert Bosch Gmbh Lichtkippdiode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3140438A (en) * 1959-05-08 1964-07-07 Clevite Corp Voltage regulating semiconductor device
US3222530A (en) * 1961-06-07 1965-12-07 Philco Corp Ultra-sensitive photo-transistor device comprising wafer having high resistivity center region with opposite conductivity, diffused, low-resistivity, and translucent outer layers
US3196329A (en) * 1963-03-08 1965-07-20 Texas Instruments Inc Symmetrical switching diode

Also Published As

Publication number Publication date
FR1499074A (fr) 1967-10-20
NL6616095A (enExample) 1967-05-17
DE1564545B2 (de) 1971-04-22
DE1564545A1 (de) 1970-05-14
SE322846B (enExample) 1970-04-20
GB1151517A (en) 1969-05-07
US3427509A (en) 1969-02-11

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)