DE1564545C3 - Asymmetrische Halbleiter-Kippdiode - Google Patents
Asymmetrische Halbleiter-KippdiodeInfo
- Publication number
- DE1564545C3 DE1564545C3 DE1564545A DE1564545A DE1564545C3 DE 1564545 C3 DE1564545 C3 DE 1564545C3 DE 1564545 A DE1564545 A DE 1564545A DE 1564545 A DE1564545 A DE 1564545A DE 1564545 C3 DE1564545 C3 DE 1564545C3
- Authority
- DE
- Germany
- Prior art keywords
- zone
- semiconductor
- diode
- layer
- breakover diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 230000000903 blocking effect Effects 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- 230000015556 catabolic process Effects 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- -1 gallium arsenide Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US50802865A | 1965-11-16 | 1965-11-16 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1564545A1 DE1564545A1 (de) | 1970-05-14 |
| DE1564545B2 DE1564545B2 (de) | 1971-04-22 |
| DE1564545C3 true DE1564545C3 (de) | 1974-09-26 |
Family
ID=24021082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1564545A Expired DE1564545C3 (de) | 1965-11-16 | 1966-11-15 | Asymmetrische Halbleiter-Kippdiode |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3427509A (OSRAM) |
| DE (1) | DE1564545C3 (OSRAM) |
| FR (1) | FR1499074A (OSRAM) |
| GB (1) | GB1151517A (OSRAM) |
| NL (1) | NL6616095A (OSRAM) |
| SE (1) | SE322846B (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4262295A (en) * | 1978-01-30 | 1981-04-14 | Hitachi, Ltd. | Semiconductor device |
| DE19604890B4 (de) * | 1996-02-10 | 2007-01-25 | Robert Bosch Gmbh | Lichtkippdiode |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3140438A (en) * | 1959-05-08 | 1964-07-07 | Clevite Corp | Voltage regulating semiconductor device |
| US3222530A (en) * | 1961-06-07 | 1965-12-07 | Philco Corp | Ultra-sensitive photo-transistor device comprising wafer having high resistivity center region with opposite conductivity, diffused, low-resistivity, and translucent outer layers |
| US3196329A (en) * | 1963-03-08 | 1965-07-20 | Texas Instruments Inc | Symmetrical switching diode |
-
1965
- 1965-11-16 US US508028A patent/US3427509A/en not_active Expired - Lifetime
-
1966
- 1966-10-06 GB GB44785/66A patent/GB1151517A/en not_active Expired
- 1966-11-15 NL NL6616095A patent/NL6616095A/xx unknown
- 1966-11-15 SE SE15607/66A patent/SE322846B/xx unknown
- 1966-11-15 DE DE1564545A patent/DE1564545C3/de not_active Expired
- 1966-11-16 FR FR83796A patent/FR1499074A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE322846B (OSRAM) | 1970-04-20 |
| US3427509A (en) | 1969-02-11 |
| NL6616095A (OSRAM) | 1967-05-17 |
| DE1564545A1 (de) | 1970-05-14 |
| DE1564545B2 (de) | 1971-04-22 |
| GB1151517A (en) | 1969-05-07 |
| FR1499074A (fr) | 1967-10-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) |