DE1564222A1 - MOS-Transistor mit zwei Steuerelektroden - Google Patents
MOS-Transistor mit zwei SteuerelektrodenInfo
- Publication number
- DE1564222A1 DE1564222A1 DE19661564222 DE1564222A DE1564222A1 DE 1564222 A1 DE1564222 A1 DE 1564222A1 DE 19661564222 DE19661564222 DE 19661564222 DE 1564222 A DE1564222 A DE 1564222A DE 1564222 A1 DE1564222 A1 DE 1564222A1
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- mos transistor
- transistors
- control
- control electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010168 coupling process Methods 0.000 claims description 16
- 238000005859 coupling reaction Methods 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 8
- 238000004804 winding Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 2
- 210000004072 lung Anatomy 0.000 claims 2
- BHMLFPOTZYRDKA-IRXDYDNUSA-N (2s)-2-[(s)-(2-iodophenoxy)-phenylmethyl]morpholine Chemical compound IC1=CC=CC=C1O[C@@H](C=1C=CC=CC=1)[C@H]1OCCNC1 BHMLFPOTZYRDKA-IRXDYDNUSA-N 0.000 claims 1
- 101150018711 AASS gene Proteins 0.000 claims 1
- 102220352928 c.35C>A Human genes 0.000 claims 1
- 239000010410 layer Substances 0.000 description 19
- 230000008878 coupling Effects 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 210000000056 organ Anatomy 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XKJMBINCVNINCA-UHFFFAOYSA-N Alfalone Chemical compound CON(C)C(=O)NC1=CC=C(Cl)C(Cl)=C1 XKJMBINCVNINCA-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DK2466AA DK134919B (da) | 1966-01-04 | 1966-01-04 | Matrix-kobling. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1564222A1 true DE1564222A1 (de) | 1970-01-22 |
Family
ID=8088879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19661564222 Pending DE1564222A1 (de) | 1966-01-04 | 1966-12-29 | MOS-Transistor mit zwei Steuerelektroden |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1564222A1 (da) |
| DK (1) | DK134919B (da) |
| NO (1) | NO120840B (da) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2104379A1 (de) * | 1971-01-30 | 1972-08-17 | Beneking H | Schaltung zur Realisierung einer steuerbaren Kapazität |
| DE3123242A1 (de) * | 1981-06-11 | 1983-02-03 | Siemens AG, 1000 Berlin und 8000 München | Integrierbare korrelatorschaltung fuer ein bildverarbeitendes system |
| EP0137257A2 (en) * | 1983-09-08 | 1985-04-17 | International Business Machines Corporation | Resistive gate field effect transistor logic family |
| WO2004006338A1 (en) * | 2002-07-02 | 2004-01-15 | Sandisk Corporation | Technique for fabricating logic elements using multiple gate layers |
-
1966
- 1966-01-04 DK DK2466AA patent/DK134919B/da unknown
- 1966-12-29 DE DE19661564222 patent/DE1564222A1/de active Pending
-
1967
- 1967-01-03 NO NO166240A patent/NO120840B/no unknown
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2104379A1 (de) * | 1971-01-30 | 1972-08-17 | Beneking H | Schaltung zur Realisierung einer steuerbaren Kapazität |
| DE3123242A1 (de) * | 1981-06-11 | 1983-02-03 | Siemens AG, 1000 Berlin und 8000 München | Integrierbare korrelatorschaltung fuer ein bildverarbeitendes system |
| EP0137257A2 (en) * | 1983-09-08 | 1985-04-17 | International Business Machines Corporation | Resistive gate field effect transistor logic family |
| EP0137257A3 (en) * | 1983-09-08 | 1986-02-19 | International Business Machines Corporation | Resistive gate field effect transistor logic family |
| WO2004006338A1 (en) * | 2002-07-02 | 2004-01-15 | Sandisk Corporation | Technique for fabricating logic elements using multiple gate layers |
| US7064034B2 (en) | 2002-07-02 | 2006-06-20 | Sandisk Corporation | Technique for fabricating logic elements using multiple gate layers |
| US7265423B2 (en) | 2002-07-02 | 2007-09-04 | Sandisk Corporation | Technique for fabricating logic elements using multiple gate layers |
| US7425744B2 (en) | 2002-07-02 | 2008-09-16 | Sandisk Corporation | Fabricating logic and memory elements using multiple gate layers |
Also Published As
| Publication number | Publication date |
|---|---|
| NO120840B (da) | 1970-12-14 |
| DK134919B (da) | 1977-02-07 |
| DK134919C (da) | 1977-06-27 |
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