DE1499614A1 - Lese- und Schreibvorrichtung fuer Tunneldioden-Speicher - Google Patents
Lese- und Schreibvorrichtung fuer Tunneldioden-SpeicherInfo
- Publication number
- DE1499614A1 DE1499614A1 DE19661499614 DE1499614A DE1499614A1 DE 1499614 A1 DE1499614 A1 DE 1499614A1 DE 19661499614 DE19661499614 DE 19661499614 DE 1499614 A DE1499614 A DE 1499614A DE 1499614 A1 DE1499614 A1 DE 1499614A1
- Authority
- DE
- Germany
- Prior art keywords
- tunnel diode
- diode
- transistor
- memory
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 title claims description 18
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 6
- 241000797947 Paria Species 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
- H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR11608A FR1444749A (fr) | 1965-04-01 | 1965-04-01 | Dispositif de lecture-écriture pour mémoire à diodes tunnel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1499614A1 true DE1499614A1 (de) | 1969-11-06 |
Family
ID=8575453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19661499614 Pending DE1499614A1 (de) | 1965-04-01 | 1966-04-01 | Lese- und Schreibvorrichtung fuer Tunneldioden-Speicher |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE678291A (xx) |
| DE (1) | DE1499614A1 (xx) |
| FR (1) | FR1444749A (xx) |
| GB (1) | GB1109575A (xx) |
| LU (1) | LU50771A1 (xx) |
| NL (1) | NL6604147A (xx) |
-
1965
- 1965-04-01 FR FR11608A patent/FR1444749A/fr not_active Expired
-
1966
- 1966-03-23 BE BE678291D patent/BE678291A/xx unknown
- 1966-03-25 LU LU50771A patent/LU50771A1/xx unknown
- 1966-03-29 NL NL6604147A patent/NL6604147A/xx unknown
- 1966-03-30 GB GB1418066A patent/GB1109575A/en not_active Expired
- 1966-04-01 DE DE19661499614 patent/DE1499614A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL6604147A (xx) | 1966-10-03 |
| FR1444749A (fr) | 1966-07-08 |
| LU50771A1 (xx) | 1967-09-25 |
| GB1109575A (en) | 1968-04-10 |
| BE678291A (xx) | 1966-09-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1011181B (de) | Matrix-Schaltung | |
| DE2719462C2 (de) | Transistor-Treiberschaltung | |
| DE1499614A1 (de) | Lese- und Schreibvorrichtung fuer Tunneldioden-Speicher | |
| DE2360378A1 (de) | Speicherzelle | |
| DE1054118B (de) | Regenerative wahlweise ODER-Schaltung | |
| DE2008065B2 (xx) | ||
| DE1474019A1 (de) | Schaltungsanordnung | |
| DE1292198B (de) | Breitbandiger logarithmischer Verstaerker | |
| DE1574496C3 (de) | Symmetrische Digital-Anzeigeschaltung | |
| DE1774813B1 (de) | Speicherelement mit transistoren und matrixspeicher mit diesen speicherelementen | |
| DE1135038B (de) | Bistabile Kippanordnung mit Tunneldioden und Schalttransistoren | |
| DE2310626C3 (de) | Assoziativer Speicher | |
| DE1210912B (de) | Speicherschaltung mit ternaerem Zaehlsystem | |
| DE1164477B (de) | íÀWeder-nochíÂ-Stufe fuer logische Steuereinrichtungen unter Verwendung einer Tunneldiode | |
| DE1499856C (de) | Treiber-Lese-Schaltung für ein transistorbestücktes Speicherflipflop | |
| DE1909186C3 (de) | Assoziativspeicher | |
| DE2238687A1 (de) | Binaere addieranordnung | |
| DE1766617C3 (de) | Schaltungsanordnung zum Vergleich mehrerer Spannungen miteinander, die auf n-Elngangsleitungen angeliefert werden und bei der jeder Eingangsleitung eine Ausgangsleitung zugeordnet Ist | |
| DE1499744A1 (de) | Elektronisches Speicherelement | |
| DE1103968B (de) | Bistabiler Multivibrator | |
| DE1512450A1 (de) | Bistabile Logikschaltung | |
| DE1462504A1 (de) | Mit hoher Geschwindigkeit arbeitende Torschaltung | |
| DE1499857C (de) | Lese Treiber Schaltung für einen Datenspeicher | |
| DE1499720C (de) | Elektronisches Speicherelement | |
| DE1807027A1 (de) | Verfahren und Vorrichtung zum Nachweis von Spitzen und/oder Senken eines veraenderlichen Spannungssignals |