GB1109575A - Tunnel-diode matrix memory with non-destructive reading and with writing of information - Google Patents

Tunnel-diode matrix memory with non-destructive reading and with writing of information

Info

Publication number
GB1109575A
GB1109575A GB1418066A GB1418066A GB1109575A GB 1109575 A GB1109575 A GB 1109575A GB 1418066 A GB1418066 A GB 1418066A GB 1418066 A GB1418066 A GB 1418066A GB 1109575 A GB1109575 A GB 1109575A
Authority
GB
United Kingdom
Prior art keywords
diode
tunnel
terminal
memory
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1418066A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Publication of GB1109575A publication Critical patent/GB1109575A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
GB1418066A 1965-04-01 1966-03-30 Tunnel-diode matrix memory with non-destructive reading and with writing of information Expired GB1109575A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR11608A FR1444749A (fr) 1965-04-01 1965-04-01 Dispositif de lecture-écriture pour mémoire à diodes tunnel

Publications (1)

Publication Number Publication Date
GB1109575A true GB1109575A (en) 1968-04-10

Family

ID=8575453

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1418066A Expired GB1109575A (en) 1965-04-01 1966-03-30 Tunnel-diode matrix memory with non-destructive reading and with writing of information

Country Status (6)

Country Link
BE (1) BE678291A (xx)
DE (1) DE1499614A1 (xx)
FR (1) FR1444749A (xx)
GB (1) GB1109575A (xx)
LU (1) LU50771A1 (xx)
NL (1) NL6604147A (xx)

Also Published As

Publication number Publication date
NL6604147A (xx) 1966-10-03
FR1444749A (fr) 1966-07-08
LU50771A1 (xx) 1967-09-25
DE1499614A1 (de) 1969-11-06
BE678291A (xx) 1966-09-23

Similar Documents

Publication Publication Date Title
GB1163789A (en) Driver-Sense Circuit Arrangements in Memory Systems
GB848858A (en) Improvements in magnetic core storage devices
GB1065702A (en) Storage cell and memory incorporating such cells
US2917727A (en) Electrical apparatus
US3192510A (en) Gated diode selection drive system
US2926339A (en) Switching apparatus
GB1052290A (xx)
GB1118054A (en) Computer memory circuits
GB1042043A (xx)
GB1109575A (en) Tunnel-diode matrix memory with non-destructive reading and with writing of information
US3078395A (en) Bidirectional load current switching circuit
US3154763A (en) Core storage matrix
GB940966A (en) Tunnel diode memory device
US3305726A (en) Magnetic core driving circuit
US3141097A (en) Tunnel diode address register
GB850845A (en) Magnetic memory device
GB993678A (en) A memory cell for a content addressable memory
US3193807A (en) Electrical sampling switch
US3535701A (en) Addressing apparatus
US3178692A (en) Memory sensing system
GB1211524A (en) Memory-points matrix for reading-writing device
US3231876A (en) Electrical switching means
GB1172369A (en) Improvements in and relating to Data Storage Apparatus
US3231871A (en) Magnetic memory system
GB999047A (en) Memory circuits employing negative resistance elements