DE1489518A1 - Lumineszenzdiode und Verfahren zu ihrer Herstellung - Google Patents
Lumineszenzdiode und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE1489518A1 DE1489518A1 DE19651489518 DE1489518A DE1489518A1 DE 1489518 A1 DE1489518 A1 DE 1489518A1 DE 19651489518 DE19651489518 DE 19651489518 DE 1489518 A DE1489518 A DE 1489518A DE 1489518 A1 DE1489518 A1 DE 1489518A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- junction
- semiconductor body
- emitting diode
- hemispherical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 52
- 239000002800 charge carrier Substances 0.000 claims description 16
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 2
- 241001520820 Joinvillea ascendens Species 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 15
- 230000005855 radiation Effects 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
- 238000004020 luminiscence type Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 239000003708 ampul Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 241000251730 Chondrichthyes Species 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000003292 diminished effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical compound CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 244000221110 common millet Species 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- PSGAAPLEWMOORI-PEINSRQWSA-N medroxyprogesterone acetate Chemical compound C([C@@]12C)CC(=O)C=C1[C@@H](C)C[C@@H]1[C@@H]2CC[C@]2(C)[C@@](OC(C)=O)(C(C)=O)CC[C@H]21 PSGAAPLEWMOORI-PEINSRQWSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0098033 | 1965-07-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1489518A1 true DE1489518A1 (de) | 1969-04-03 |
Family
ID=7521174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19651489518 Pending DE1489518A1 (de) | 1965-07-07 | 1965-07-07 | Lumineszenzdiode und Verfahren zu ihrer Herstellung |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH446527A (enrdf_load_stackoverflow) |
| DE (1) | DE1489518A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1101947A (enrdf_load_stackoverflow) |
| NL (1) | NL6609535A (enrdf_load_stackoverflow) |
| SE (1) | SE301186B (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3009192C2 (de) * | 1980-03-11 | 1984-05-10 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Überlastschutzanordnung |
| DE3041228A1 (de) * | 1980-11-03 | 1982-05-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Leuchtdiode vom mesatyp |
| GB8715211D0 (en) * | 1987-06-29 | 1987-08-05 | Secr Defence | Lensed photo detector |
-
1965
- 1965-07-07 DE DE19651489518 patent/DE1489518A1/de active Pending
-
1966
- 1966-06-09 CH CH837966A patent/CH446527A/de unknown
- 1966-06-14 GB GB26571/66A patent/GB1101947A/en not_active Expired
- 1966-06-28 SE SE8783/66A patent/SE301186B/xx unknown
- 1966-07-07 NL NL6609535A patent/NL6609535A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6609535A (enrdf_load_stackoverflow) | 1967-01-09 |
| SE301186B (enrdf_load_stackoverflow) | 1968-05-27 |
| CH446527A (de) | 1967-11-15 |
| GB1101947A (en) | 1968-02-07 |
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