DE1464258A1 - Verfahren und Einrichtung zum Herstellen von elektrischen oder optischen Einrichtungen mittels einer Ionenstrahlung - Google Patents

Verfahren und Einrichtung zum Herstellen von elektrischen oder optischen Einrichtungen mittels einer Ionenstrahlung

Info

Publication number
DE1464258A1
DE1464258A1 DE19621464258 DE1464258A DE1464258A1 DE 1464258 A1 DE1464258 A1 DE 1464258A1 DE 19621464258 DE19621464258 DE 19621464258 DE 1464258 A DE1464258 A DE 1464258A DE 1464258 A1 DE1464258 A1 DE 1464258A1
Authority
DE
Germany
Prior art keywords
layer
ionized
electrical
mentioned
substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19621464258
Other languages
German (de)
English (en)
Inventor
Friedrich Dinhobel
Baker Charles E
Leonhard Friedrich W
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
McDonnell Aircraft Corp
Original Assignee
McDonnell Aircraft Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by McDonnell Aircraft Corp filed Critical McDonnell Aircraft Corp
Publication of DE1464258A1 publication Critical patent/DE1464258A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
DE19621464258 1961-05-08 1962-07-27 Verfahren und Einrichtung zum Herstellen von elektrischen oder optischen Einrichtungen mittels einer Ionenstrahlung Pending DE1464258A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US108439A US3245895A (en) 1961-05-08 1961-05-08 Ion beam deposition as a means of making electric circuits and circuit elements

Publications (1)

Publication Number Publication Date
DE1464258A1 true DE1464258A1 (de) 1969-03-27

Family

ID=22322213

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19621464258 Pending DE1464258A1 (de) 1961-05-08 1962-07-27 Verfahren und Einrichtung zum Herstellen von elektrischen oder optischen Einrichtungen mittels einer Ionenstrahlung

Country Status (6)

Country Link
US (1) US3245895A (US07579456-20090825-P00002.png)
BE (1) BE620882A (US07579456-20090825-P00002.png)
DE (1) DE1464258A1 (US07579456-20090825-P00002.png)
GB (1) GB1010209A (US07579456-20090825-P00002.png)
LU (1) LU42151A1 (US07579456-20090825-P00002.png)
NL (1) NL281145A (US07579456-20090825-P00002.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2631881A1 (de) * 1975-07-18 1977-02-03 Futaba Denshi Kogyo Kk Verfahren zur herstellung einer halbleitervorrichtung

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341352A (en) * 1962-12-10 1967-09-12 Kenneth W Ehlers Process for treating metallic surfaces with an ionic beam
US3321390A (en) * 1963-10-17 1967-05-23 Sperry Rand Corp Microcircuits formed by radio-fre-quency brush discharges
US3386909A (en) * 1964-12-08 1968-06-04 Air Force Usa Apparatus for depositing material on a filament from ionized coating material
US3913520A (en) * 1972-08-14 1975-10-21 Precision Thin Film Corp High vacuum deposition apparatus
NL7905720A (nl) * 1979-07-24 1981-01-27 Hazemeijer Bv Werkwijze voor het verbeteren van schakelkontakten, in het bijzonder voor vakuumschakelaars.
US4333808A (en) * 1979-10-30 1982-06-08 International Business Machines Corporation Method for manufacture of ultra-thin film capacitor
DK116681A (da) * 1981-03-16 1982-09-17 G Soerensen Fremgangsmaade til fremstilling af en legering eller en blanding af gundstoffer i et substrats overflade
US4520039A (en) * 1982-09-23 1985-05-28 Sovonics Solar Systems Compositionally varied materials and method for synthesizing the materials
US4664960A (en) * 1982-09-23 1987-05-12 Energy Conversion Devices, Inc. Compositionally varied materials and method for synthesizing the materials
GB2148608B (en) * 1983-10-22 1987-03-18 Stc Plc Forming conductive regions in polymeric materials
US4888202A (en) * 1986-07-31 1989-12-19 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
JPS6353259A (ja) * 1986-08-22 1988-03-07 Mitsubishi Electric Corp 薄膜形成方法
US4804852A (en) * 1987-01-29 1989-02-14 Eaton Corporation Treating work pieces with electro-magnetically scanned ion beams
GB9113023D0 (en) 1991-06-17 1991-08-07 Xaar Ltd Multi-channel arrary droplet deposition apparatus and method of manufacture thereof
JP3177897B2 (ja) 1996-04-23 2001-06-18 ザール テクノロジー リミテッド 液滴デポジット装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2563503A (en) * 1951-08-07 Transistor
US2465715A (en) * 1946-01-22 1949-03-29 Allied Chem & Dye Corp Isolation of styrene by azeotropic distillation with morpholines
US2702863A (en) * 1949-07-12 1955-02-22 Koch Jorgen Method of treating optical elements
BE500536A (US07579456-20090825-P00002.png) * 1950-01-31
US2784115A (en) * 1953-05-04 1957-03-05 Eastman Kodak Co Method of producing titanium dioxide coatings
US2860251A (en) * 1953-10-15 1958-11-11 Rauland Corp Apparatus for manufacturing semi-conductor devices
US2921892A (en) * 1954-12-08 1960-01-19 Amalgamated Growth Ind Inc Apparatus and process for conducting chemical reactions
US3119707A (en) * 1960-03-31 1964-01-28 Space Technology Lab Inc Method for the deposition of thin films by electron deposition
US3117022A (en) * 1960-09-06 1964-01-07 Space Technhology Lab Inc Deposition arrangement

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2631881A1 (de) * 1975-07-18 1977-02-03 Futaba Denshi Kogyo Kk Verfahren zur herstellung einer halbleitervorrichtung

Also Published As

Publication number Publication date
LU42151A1 (US07579456-20090825-P00002.png) 1963-01-31
NL281145A (US07579456-20090825-P00002.png)
GB1010209A (en) 1965-11-17
BE620882A (US07579456-20090825-P00002.png)
US3245895A (en) 1966-04-12

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