DE1439911A1 - Diode mit niedriger Impedanz - Google Patents
Diode mit niedriger ImpedanzInfo
- Publication number
- DE1439911A1 DE1439911A1 DE19601439911 DE1439911A DE1439911A1 DE 1439911 A1 DE1439911 A1 DE 1439911A1 DE 19601439911 DE19601439911 DE 19601439911 DE 1439911 A DE1439911 A DE 1439911A DE 1439911 A1 DE1439911 A1 DE 1439911A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- arrangement
- metallic
- diode
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 7
- 230000001105 regulatory effect Effects 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 238000005275 alloying Methods 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 230000005293 ferrimagnetic effect Effects 0.000 claims description 3
- 238000005192 partition Methods 0.000 claims 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 claims 1
- 230000010355 oscillation Effects 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 6
- 230000001939 inductive effect Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 241001544515 Eretes Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002262 irrigation Effects 0.000 description 1
- 238000003973 irrigation Methods 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- XATZQMXOIQGKKV-UHFFFAOYSA-N nickel;hydrochloride Chemical compound Cl.[Ni] XATZQMXOIQGKKV-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C7/00—Modulating electromagnetic waves
- H03C7/02—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas
- H03C7/025—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas using semiconductor devices
- H03C7/027—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas using semiconductor devices using diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
- H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/02—Varying the frequency of the oscillations by electronic means
- H03B2201/0225—Varying the frequency of the oscillations by electronic means the means being associated with an element comprising distributed inductances and capacitances
- H03B2201/0241—Varying the frequency of the oscillations by electronic means the means being associated with an element comprising distributed inductances and capacitances the element being a magnetically variable element, e.g. an Yttrium Iron Garnet
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measuring Fluid Pressure (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US855426A US3063023A (en) | 1959-11-25 | 1959-11-25 | Modulated oscillator and low impedance diode construction therefor |
| US42894A US3145454A (en) | 1959-11-25 | 1960-07-14 | Fabrication of low impedance diode structures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1439911A1 true DE1439911A1 (de) | 1968-12-19 |
Family
ID=26719746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19601439911 Pending DE1439911A1 (de) | 1959-11-25 | 1960-11-05 | Diode mit niedriger Impedanz |
Country Status (6)
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL277811A (US08066781-20111129-C00013.png) * | 1961-04-27 | 1900-01-01 | ||
| US3247718A (en) * | 1963-02-01 | 1966-04-26 | Pratt & Whitney Inc | Digital output pressure transducer |
| DE1290260B (de) * | 1963-09-30 | 1969-03-06 | Siemens Ag | Anordnung zur Verminderung der Eigeninduktivitaet und Zuleitungsinduktivitaet von Tunneldioden |
| US3343107A (en) * | 1963-12-03 | 1967-09-19 | Bell Telephone Labor Inc | Semiconductor package |
| NL134170C (US08066781-20111129-C00013.png) * | 1963-12-17 | 1900-01-01 | ||
| US3304469A (en) * | 1964-03-03 | 1967-02-14 | Rca Corp | Field effect solid state device having a partially insulated electrode |
| US3274459A (en) * | 1964-05-07 | 1966-09-20 | Sterzer Fred | Low impedance coupled transmission line and solid state tunnel diode structure |
| US3312879A (en) * | 1964-07-29 | 1967-04-04 | North American Aviation Inc | Semiconductor structure including opposite conductivity segments |
| US3600648A (en) * | 1965-04-21 | 1971-08-17 | Sylvania Electric Prod | Semiconductor electrical translating device |
| US3435377A (en) * | 1966-03-04 | 1969-03-25 | Gen Dynamics Corp | Force-to-frequency transducer |
| US3579278A (en) * | 1967-10-12 | 1971-05-18 | Varian Associates | Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor |
| DE1926989A1 (de) * | 1969-05-27 | 1970-12-03 | Beneking Prof Dr Rer Nat Heinz | Hochfrequenzleitung |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2680220A (en) * | 1950-06-09 | 1954-06-01 | Int Standard Electric Corp | Crystal diode and triode |
| US2829422A (en) * | 1952-05-21 | 1958-04-08 | Bell Telephone Labor Inc | Methods of fabricating semiconductor signal translating devices |
| US2713132A (en) * | 1952-10-14 | 1955-07-12 | Int Standard Electric Corp | Electric rectifying devices employing semiconductors |
| US2734154A (en) * | 1953-07-27 | 1956-02-07 | Semiconductor devices | |
| US2879480A (en) * | 1954-11-04 | 1959-03-24 | Western Electric Co | Frequency modulating transistor circuits |
| NL251064A (US08066781-20111129-C00013.png) * | 1955-11-04 | |||
| US2852746A (en) * | 1956-02-02 | 1958-09-16 | Paul F Scheele | Voltage-controlled transistor oscillator |
| US2842831A (en) * | 1956-08-30 | 1958-07-15 | Bell Telephone Labor Inc | Manufacture of semiconductor devices |
| US2981877A (en) * | 1959-07-30 | 1961-04-25 | Fairchild Semiconductor | Semiconductor device-and-lead structure |
-
0
- NL NL257516D patent/NL257516A/xx unknown
- NL NL113570D patent/NL113570C/xx active
-
1959
- 1959-11-25 US US855426A patent/US3063023A/en not_active Expired - Lifetime
-
1960
- 1960-07-14 US US42894A patent/US3145454A/en not_active Expired - Lifetime
- 1960-11-05 DE DE19601439911 patent/DE1439911A1/de active Pending
- 1960-11-23 GB GB40273/60A patent/GB974493A/en not_active Expired
- 1960-11-24 FR FR844905A patent/FR1274197A/fr not_active Expired
- 1960-11-25 CH CH1321960A patent/CH387177A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR1274197A (fr) | 1961-10-20 |
| NL113570C (US08066781-20111129-C00013.png) | |
| GB974493A (en) | 1964-11-04 |
| NL257516A (US08066781-20111129-C00013.png) | |
| US3063023A (en) | 1962-11-06 |
| CH387177A (fr) | 1965-01-31 |
| US3145454A (en) | 1964-08-25 |
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