DE1439122C3 - - Google Patents
Info
- Publication number
- DE1439122C3 DE1439122C3 DE19511439122 DE1439122A DE1439122C3 DE 1439122 C3 DE1439122 C3 DE 1439122C3 DE 19511439122 DE19511439122 DE 19511439122 DE 1439122 A DE1439122 A DE 1439122A DE 1439122 C3 DE1439122 C3 DE 1439122C3
- Authority
- DE
- Germany
- Prior art keywords
- current
- semiconductor body
- semiconductor
- component according
- semiconductor component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 172
- 239000002800 charge carrier Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 13
- 238000005215 recombination Methods 0.000 claims description 12
- 230000006798 recombination Effects 0.000 claims description 11
- 230000000737 periodic effect Effects 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000005670 electromagnetic radiation Effects 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005421 electrostatic potential Methods 0.000 description 2
- 208000031872 Body Remains Diseases 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004215 lattice model Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000005654 stationary process Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19511439122 DE1439122A1 (de) | 1951-01-28 | 1951-01-28 | Halbleiterbauelement mit veraenderbaren negativen Teilen der Kennlinien |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19511439122 DE1439122A1 (de) | 1951-01-28 | 1951-01-28 | Halbleiterbauelement mit veraenderbaren negativen Teilen der Kennlinien |
| DES0077312 | 1961-12-27 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1439122A1 DE1439122A1 (de) | 1969-01-30 |
| DE1439122B2 DE1439122B2 (US08088918-20120103-C00476.png) | 1974-05-16 |
| DE1439122C3 true DE1439122C3 (US08088918-20120103-C00476.png) | 1975-01-02 |
Family
ID=25752073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19511439122 Granted DE1439122A1 (de) | 1951-01-28 | 1951-01-28 | Halbleiterbauelement mit veraenderbaren negativen Teilen der Kennlinien |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1439122A1 (US08088918-20120103-C00476.png) |
-
1951
- 1951-01-28 DE DE19511439122 patent/DE1439122A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE1439122B2 (US08088918-20120103-C00476.png) | 1974-05-16 |
| DE1439122A1 (de) | 1969-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE814487C (de) | Feste, leitende elektrische Vorrichtung unter Verwendung von Halbleiterschichten zur Steuerung elektrischer Energie | |
| DE2008043C3 (de) | Halbleiteroszillatorelement mit Übergitter | |
| DE961176C (de) | Elektrische Schaltungsanordnung mit fallender Strom-Spannungs-Kennlinie | |
| DE2326751C3 (de) | Halbleiterbauelement zum Speichern und Verfahren zum Betrieb | |
| DE2803795A1 (de) | Halbleiter-speicherelement | |
| DE2607940A1 (de) | Mehrschichtiges halbleiterbauelement | |
| DE2619663B2 (de) | Feldeffekttransistor, Verfahren zu seinem Betrieb und Verwendung als schneller Schalter sowie in einer integrierten Schaltung | |
| DE1042760B (de) | Halbleiteranordnung mit einem Halbleiterkoerper und zwei ohmschen Elektroden an dessen beiden Endflaechen | |
| DE2628381C3 (US08088918-20120103-C00476.png) | ||
| DE1951857A1 (de) | Elektrolumineszenzdiode | |
| DE1950937C3 (de) | Halbleiterbauelement zur Erzeugung von in der Frequenz steuerbaren Mikrowellen | |
| DE1293900B (de) | Feldeffekt-Halbleiterbauelement | |
| DE2124635A1 (de) | Verfahren zur Steuerung eines Bereiches hoher elektrischer Feldstarke in Halblei tem | |
| DE1439122C3 (US08088918-20120103-C00476.png) | ||
| DE1541413C3 (de) | Anordnung zur Erzeugung von elektromagnetischen Schockwellenschwingungen | |
| DE1212221B (de) | Halbleiterbauelement mit einem scheibenfoermigen Halbleiterkoerper und zwei sperrfreien Basiselektroden | |
| DE1489052C2 (de) | Verfahren zum Herstellen von Halbleiterbauelementen | |
| DE977015C (de) | Verfahren zur Herstellung von Transistoren durch elektrische Formierung | |
| DE1589197A1 (de) | Lichtemittierende Halbleiteranordnung | |
| DE1149460B (de) | Elektrische Halbleiteranordnung mit einem eigenleitenden Kristall aus Cadmiumsulfid,Cadmiumselenid, Zinksulfid, Zinkselenid oder Zinkoxyd | |
| DE1591085C3 (de) | Halbleiterbauelement zur Schwingungserzeugung | |
| DE2458735C2 (de) | Transistor mit einem hohen Stromverstärkungsfaktor bei kleinen Kollektorströmen | |
| DE2520282C2 (de) | Frequenzvervielfacher | |
| EP3014658B1 (de) | Feldeffekttransistor-anordnung | |
| DE1464979C3 (de) | Halbleiterschaltelement |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SH | Request for examination between 03.10.1968 and 22.04.1971 | ||
| C3 | Grant after two publication steps (3rd publication) |