DE1300164B - Verfahren zum Herstellen von Zenerdioden - Google Patents
Verfahren zum Herstellen von ZenerdiodenInfo
- Publication number
- DE1300164B DE1300164B DED52101A DED0052101A DE1300164B DE 1300164 B DE1300164 B DE 1300164B DE D52101 A DED52101 A DE D52101A DE D0052101 A DED0052101 A DE D0052101A DE 1300164 B DE1300164 B DE 1300164B
- Authority
- DE
- Germany
- Prior art keywords
- temperature
- junction
- semiconductor
- alloyed
- doping material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000015556 catabolic process Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 238000005275 alloying Methods 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 241001676573 Minium Species 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/983—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DED52101A DE1300164B (de) | 1967-01-26 | 1967-01-26 | Verfahren zum Herstellen von Zenerdioden |
| US695747A US3544397A (en) | 1967-01-26 | 1968-01-04 | Method for the manufacturing of zener diodes |
| GB2691/68A GB1147015A (en) | 1967-01-26 | 1968-01-18 | Semiconductor devices |
| FR1553289D FR1553289A (enExample) | 1967-01-26 | 1968-01-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DED52101A DE1300164B (de) | 1967-01-26 | 1967-01-26 | Verfahren zum Herstellen von Zenerdioden |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1300164B true DE1300164B (de) | 1969-07-31 |
Family
ID=7053905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DED52101A Pending DE1300164B (de) | 1967-01-26 | 1967-01-26 | Verfahren zum Herstellen von Zenerdioden |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3544397A (enExample) |
| DE (1) | DE1300164B (enExample) |
| FR (1) | FR1553289A (enExample) |
| GB (1) | GB1147015A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4822374B1 (enExample) * | 1968-10-17 | 1973-07-05 | ||
| US3881179A (en) * | 1972-08-23 | 1975-04-29 | Motorola Inc | Zener diode structure having three terminals |
| US3988757A (en) * | 1973-10-30 | 1976-10-26 | General Electric Company | Deep diode zeners |
| US3988770A (en) * | 1973-12-14 | 1976-10-26 | General Electric Company | Deep finger diodes |
| JPS5252593A (en) * | 1975-10-27 | 1977-04-27 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light receiving diode |
| DE2916114A1 (de) * | 1978-04-21 | 1979-10-31 | Hitachi Ltd | Halbleitervorrichtung |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1063007B (de) * | 1954-06-24 | 1959-08-06 | Western Electric Co | Verfahren zum Fortbewegen eines fest-fluessigen Grenzbereichs durch einen Koerper aus schmelzbarem Material zwecks Durchfuehrung einer gelenkten Diffusion |
| DE1090330B (de) * | 1958-03-19 | 1960-10-06 | Shockley Transistor Corp | Halbleiteranordnung mit einem Halbleiterkoerper mit zwei Zonen entgegengesetzten Leitfaehigkeitstyps und je einer Elektrode an den beiden Zonen |
| US3025589A (en) * | 1955-11-04 | 1962-03-20 | Fairchild Camera Instr Co | Method of manufacturing semiconductor devices |
| FR1372145A (fr) * | 1963-02-15 | 1964-09-11 | Intermetall | Procédé pour l'établissement d'un passage p-n dans un corps semi-conducteur et éléments semi-conducteurs conformes à ceux ainsi obtenus |
| FR84496E (fr) * | 1963-02-15 | 1965-02-19 | Intermetall Ges Fur Metallurg | Procédé pour l'établissement d'un passage pn dans un corps semi-conducteur et éléments semi-conducteurs conformes à ceux ainsi obtenus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3457469A (en) * | 1965-11-15 | 1969-07-22 | Motorola Inc | Noise diode having an alloy zener junction |
-
1967
- 1967-01-26 DE DED52101A patent/DE1300164B/de active Pending
-
1968
- 1968-01-04 US US695747A patent/US3544397A/en not_active Expired - Lifetime
- 1968-01-18 GB GB2691/68A patent/GB1147015A/en not_active Expired
- 1968-01-25 FR FR1553289D patent/FR1553289A/fr not_active Expired
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1063007B (de) * | 1954-06-24 | 1959-08-06 | Western Electric Co | Verfahren zum Fortbewegen eines fest-fluessigen Grenzbereichs durch einen Koerper aus schmelzbarem Material zwecks Durchfuehrung einer gelenkten Diffusion |
| US3025589A (en) * | 1955-11-04 | 1962-03-20 | Fairchild Camera Instr Co | Method of manufacturing semiconductor devices |
| DE1090330B (de) * | 1958-03-19 | 1960-10-06 | Shockley Transistor Corp | Halbleiteranordnung mit einem Halbleiterkoerper mit zwei Zonen entgegengesetzten Leitfaehigkeitstyps und je einer Elektrode an den beiden Zonen |
| FR1372145A (fr) * | 1963-02-15 | 1964-09-11 | Intermetall | Procédé pour l'établissement d'un passage p-n dans un corps semi-conducteur et éléments semi-conducteurs conformes à ceux ainsi obtenus |
| FR84496E (fr) * | 1963-02-15 | 1965-02-19 | Intermetall Ges Fur Metallurg | Procédé pour l'établissement d'un passage pn dans un corps semi-conducteur et éléments semi-conducteurs conformes à ceux ainsi obtenus |
Also Published As
| Publication number | Publication date |
|---|---|
| US3544397A (en) | 1970-12-01 |
| FR1553289A (enExample) | 1969-01-10 |
| GB1147015A (en) | 1969-04-02 |
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