DE1287711B - - Google Patents

Info

Publication number
DE1287711B
DE1287711B DES108800A DES0108800A DE1287711B DE 1287711 B DE1287711 B DE 1287711B DE S108800 A DES108800 A DE S108800A DE S0108800 A DES0108800 A DE S0108800A DE 1287711 B DE1287711 B DE 1287711B
Authority
DE
Germany
Prior art keywords
layer
electrons
semiconductor
degenerate
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DES108800A
Other languages
German (de)
English (en)
Other versions
DE1287711C2 (cg-RX-API-DMAC7.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DE1967S0108800 priority Critical patent/DE1287711C2/de
Priority to US707118A priority patent/US3506925A/en
Priority to DE19681764638 priority patent/DE1764638A1/de
Priority to DE19681764637 priority patent/DE1764637A1/de
Publication of DE1287711B publication Critical patent/DE1287711B/de
Application granted granted Critical
Publication of DE1287711C2 publication Critical patent/DE1287711C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Bipolar Transistors (AREA)
DE1967S0108800 1967-03-14 1967-03-14 Expired DE1287711C2 (cg-RX-API-DMAC7.html)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE1967S0108800 DE1287711C2 (cg-RX-API-DMAC7.html) 1967-03-14 1967-03-14
US707118A US3506925A (en) 1967-03-14 1968-02-21 Active component for generating and amplifying ultraiiigii frequency signals
DE19681764638 DE1764638A1 (de) 1967-03-14 1968-07-09 Aktives Bauelement zum Erzeugen oder Verstaerken ultrahochfrequenter Signale
DE19681764637 DE1764637A1 (de) 1967-03-14 1968-07-09 Aktives Bauelement zum Erzeugen oder Verstaerken ultrahochfrequenter Signale

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1967S0108800 DE1287711C2 (cg-RX-API-DMAC7.html) 1967-03-14 1967-03-14

Publications (2)

Publication Number Publication Date
DE1287711B true DE1287711B (cg-RX-API-DMAC7.html) 1969-01-23
DE1287711C2 DE1287711C2 (cg-RX-API-DMAC7.html) 1969-09-11

Family

ID=7529050

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1967S0108800 Expired DE1287711C2 (cg-RX-API-DMAC7.html) 1967-03-14 1967-03-14

Country Status (2)

Country Link
US (1) US3506925A (cg-RX-API-DMAC7.html)
DE (1) DE1287711C2 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1917400A1 (de) * 1969-04-03 1970-10-15 Siemens Ag Integriertes optisch-elektronisches Festkoerpersystem
CA1251845A (en) * 1984-08-06 1989-03-28 Ian D. Henning Optical amplification

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3102201A (en) * 1958-12-15 1963-08-27 Rca Corp Semiconductor device for generating modulated radiation
US3369132A (en) * 1962-11-14 1968-02-13 Ibm Opto-electronic semiconductor devices

Also Published As

Publication number Publication date
US3506925A (en) 1970-04-14
DE1287711C2 (cg-RX-API-DMAC7.html) 1969-09-11

Similar Documents

Publication Publication Date Title
DE69020703T2 (de) Optoelektronische Vorrichtungen.
DE68913877T2 (de) Lichtemittierende Halbleitervorrichtungen mit grossem Bandabstand.
DE69630387T2 (de) Phononenresonator
DE2261527C2 (de) Halbleiterkörper mit in einer vorgegebenen Richtung abwechselnd aufeinanderfolgenden n- und p-dotierten Zonen, Verfahren zu seiner Herstellung und Verwendungen des Halbleiterkörpers
Reithmaier et al. InAs/InP quantum-dash lasers and amplifiers
DE3323811A1 (de) Halbleiter-laser
DE4000023C2 (de) Optoelektronisches Quantenhalbleiterbauelement
DE3687102T2 (de) Halbleiterlaser.
DE69020367T2 (de) Licht ausstrahlende Vorrichtung.
DE112014004277T5 (de) Terahertz-Lichtquellenchip, Lichtquellenvorrichtung, Lichtquellenanordnung und ihr Herstellungsverfahren
DE4444980A1 (de) Halbleiterlaservorrichtung
DE1007887B (de) Halbleiterverstaerker
WO2008110329A2 (de) Schneller photoleiter
DE2643503B2 (de) Verfahren zur Herstellung eines Injektionslasers
DE4426594A1 (de) Schaltvorrichtung
DE69911012T2 (de) Flacher elektronenemitter
DE69221664T2 (de) Optoelektronischen Vorrichtung
DE69313033T2 (de) Lichtemittierende Vorrichtung
DE69112288T2 (de) Hochgeschwindigkeitsoptohalbleitervorrichtung mit mehrfachen Quantentöpfen.
DE2008679A1 (de) Festkörperbauteil mit Elektronenübergangseffekt
DE1591224A1 (de) Festkoerperoszillator veraenderbarer Frequenz
DE1489942B1 (de) Schaltungsanordnung zur Frequenzmodulation eines optischen Senders (Laser) mit einer Halbleiterdiode als stimulierbarem Medium
DE69815461T2 (de) Halbleiterlaservorrichtung
DE2657640A1 (de) Guetegeschalteter injektionslaser
Vdovin et al. Effect of the radiation power on the modification of oscillations of the photocurrent in single-barrier p–i–n GaAs/AlAs/GaAs heterostructures with InAs Quantum Dots

Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee