DE1271273B - Halbleitervorrichtung, insbesondere photoempfindliche Vorrichtung, mit einem mit Elektroden versehenen Halbleiterkoerper aus Cadmiumtellurid und Verfahren zu deren Herstellung - Google Patents
Halbleitervorrichtung, insbesondere photoempfindliche Vorrichtung, mit einem mit Elektroden versehenen Halbleiterkoerper aus Cadmiumtellurid und Verfahren zu deren HerstellungInfo
- Publication number
- DE1271273B DE1271273B DEP1271A DE1271273A DE1271273B DE 1271273 B DE1271273 B DE 1271273B DE P1271 A DEP1271 A DE P1271A DE 1271273 A DE1271273 A DE 1271273A DE 1271273 B DE1271273 B DE 1271273B
- Authority
- DE
- Germany
- Prior art keywords
- cadmium telluride
- cadmium
- semiconductor
- semiconductor device
- per cubic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims description 46
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 title description 9
- 239000012535 impurity Substances 0.000 claims description 25
- 239000000370 acceptor Substances 0.000 claims description 23
- 229910052793 cadmium Inorganic materials 0.000 claims description 23
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 17
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 11
- 229910017052 cobalt Inorganic materials 0.000 claims description 10
- 239000010941 cobalt Substances 0.000 claims description 10
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052720 vanadium Inorganic materials 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003771 Gold(I) chloride Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL274815 | 1962-02-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1271273B true DE1271273B (de) | 1968-06-27 |
Family
ID=19753609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEP1271A Withdrawn DE1271273B (de) | 1962-02-14 | 1963-02-11 | Halbleitervorrichtung, insbesondere photoempfindliche Vorrichtung, mit einem mit Elektroden versehenen Halbleiterkoerper aus Cadmiumtellurid und Verfahren zu deren Herstellung |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS399221B1 (enrdf_load_stackoverflow) |
| BE (1) | BE628320A (enrdf_load_stackoverflow) |
| CH (1) | CH422997A (enrdf_load_stackoverflow) |
| DE (1) | DE1271273B (enrdf_load_stackoverflow) |
| FR (1) | FR1350998A (enrdf_load_stackoverflow) |
| GB (1) | GB1014901A (enrdf_load_stackoverflow) |
| NL (1) | NL274815A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101720490B (zh) * | 2007-06-29 | 2013-10-23 | 皇家飞利浦电子股份有限公司 | 用于碲化镉部件的电触点 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2817799A (en) * | 1953-11-25 | 1957-12-24 | Rca Corp | Semi-conductor devices employing cadmium telluride |
-
0
- NL NL274815D patent/NL274815A/xx unknown
- BE BE628320D patent/BE628320A/xx unknown
-
1963
- 1963-02-11 CH CH170363A patent/CH422997A/de unknown
- 1963-02-11 DE DEP1271A patent/DE1271273B/de not_active Withdrawn
- 1963-02-11 JP JP678563A patent/JPS399221B1/ja active Pending
- 1963-02-11 GB GB5481/63A patent/GB1014901A/en not_active Expired
- 1963-02-14 FR FR924775A patent/FR1350998A/fr not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2817799A (en) * | 1953-11-25 | 1957-12-24 | Rca Corp | Semi-conductor devices employing cadmium telluride |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1014901A (en) | 1965-12-31 |
| BE628320A (enrdf_load_stackoverflow) | |
| JPS399221B1 (enrdf_load_stackoverflow) | 1964-06-01 |
| CH422997A (de) | 1966-10-31 |
| FR1350998A (fr) | 1964-01-31 |
| NL274815A (enrdf_load_stackoverflow) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3915321C1 (de) | Verfahren zur Bildung eines Passivierungsbereiches auf einer Halbleitervorrichtung aus einer II-VI-Verbindung und Anwendung des Verfahrens | |
| DE1032404B (de) | Verfahren zur Herstellung von Flaechenhalbleiterelementen mit p-n-Schichten | |
| DE2812658C3 (de) | Verfahren zum selektiven Diffundieren von Aluminium in ein Einkristall-Siliciumhalbleitersubstrat | |
| DE2823967C2 (enrdf_load_stackoverflow) | ||
| DE1292256B (de) | Drift-Transistor und Diffusionsverfahren zu seiner Herstellung | |
| DE69005711T2 (de) | Verfahren zur Herstellung von P-Typ-II-VI-Halbleitern. | |
| DE3123234C2 (de) | Verfahren zur Herstellung eines pn-Übergangs in einem Halbleitermaterial der Gruppe II-VI | |
| DE1514376A1 (de) | Halbleiterbauelement und Verfahren zu seiner Herstellung | |
| DE1101624B (de) | Verfahren zur Herstellung einer Legierungselektrode an einer Halbleiteranordnung | |
| DE1150456B (de) | Esaki-Diode und Verfahren zu ihrer Herstellung | |
| DE2424488B2 (de) | Bildaufnahmeroehren-speicherelektrode und verfahren zu deren herstellung | |
| DE1277827B (de) | Verfahren zur Herstellung von dotierten Halbleiterkoerpern | |
| DE2251938A1 (de) | Legierung zur thermoelektrischen energieumwandlung, verfahren zu deren herstellung und daraus gebildeter thermoelektrischer energieumwandler | |
| DE1271841B (de) | Verfahren zum Herstellen eines Galliumarsenid-Transistors | |
| DE1271273B (de) | Halbleitervorrichtung, insbesondere photoempfindliche Vorrichtung, mit einem mit Elektroden versehenen Halbleiterkoerper aus Cadmiumtellurid und Verfahren zu deren Herstellung | |
| DE1105066B (de) | Halbleiteranordnung mit einem wenigstens teilweise hochohmigen Kadmiumtelluridkoerper und Verfahren zu deren Herstellung | |
| DE2522489A1 (de) | Fotoemitter | |
| DE1182750B (de) | Verfahren zum Herstellen von Halbleiterbauelementen | |
| DE1564170B2 (de) | Halbleiterbauelement hoher schaltgeschwindigkeit und ver fahren zu seiner herstellung | |
| DE2244992B2 (de) | Verfahren zum herstellen homogen dotierter zonen in halbleiterbauelementen | |
| DE69027282T2 (de) | Halbleiterbauelement und elektronische Vorrichtung unter Verwendung des Halbleiters | |
| AT233119B (de) | Halbleiteranordnung mit einem im wesentlichen einkristallinen Halbleiterkörper | |
| DE2603745C3 (de) | Mehrschichtiger Metallanschlußkontakt und Verfahren zu seiner Herstellung | |
| DE1199897B (de) | Verfahren zur Herstellung einer Sperrschicht in einem n-leitenden Cadmiumsulfidkoerper | |
| DE1179303B (de) | Halbleiterbauelement und Verfahren zu seiner Herstellung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |