DE1252809B - Halbleiterdiode mit einem einkristallinen Halbleiterkörper und mit Rekombinationszentren in der n- und in der p-Zone und Verfahren zum Herstellen - Google Patents
Halbleiterdiode mit einem einkristallinen Halbleiterkörper und mit Rekombinationszentren in der n- und in der p-Zone und Verfahren zum HerstellenInfo
- Publication number
- DE1252809B DE1252809B DENDAT1252809D DE1252809DA DE1252809B DE 1252809 B DE1252809 B DE 1252809B DE NDAT1252809 D DENDAT1252809 D DE NDAT1252809D DE 1252809D A DE1252809D A DE 1252809DA DE 1252809 B DE1252809 B DE 1252809B
- Authority
- DE
- Germany
- Prior art keywords
- recombination centers
- diode
- semiconductor body
- zone
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 36
- 230000006798 recombination Effects 0.000 title claims description 27
- 238000005215 recombination Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 17
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000000370 acceptor Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 241000158147 Sator Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007592 spray painting technique Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/062—Gold diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US245041A US3337779A (en) | 1962-12-17 | 1962-12-17 | Snap-off diode containing recombination impurities |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1252809B true DE1252809B (de) | 1967-10-26 |
Family
ID=22925065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DENDAT1252809D Pending DE1252809B (de) | 1962-12-17 | Halbleiterdiode mit einem einkristallinen Halbleiterkörper und mit Rekombinationszentren in der n- und in der p-Zone und Verfahren zum Herstellen |
Country Status (6)
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3633059A (en) * | 1966-06-01 | 1972-01-04 | Semiconductor Res Found | Electroluminescent pn junction semiconductor device for use at higher frequencies |
| US3419764A (en) * | 1966-12-12 | 1968-12-31 | Kasugai Takahiko | Negative resistance semiconductor devices |
| US3510734A (en) * | 1967-10-18 | 1970-05-05 | Hughes Aircraft Co | Impatt diode |
| US3662232A (en) * | 1970-12-10 | 1972-05-09 | Fmc Corp | Semiconductor devices having low minority carrier lifetime and process for producing same |
| US3963523A (en) * | 1973-04-26 | 1976-06-15 | Matsushita Electronics Corporation | Method of manufacturing semiconductor devices |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2631356A (en) * | 1953-03-17 | Method of making p-n junctions | ||
| US2680220A (en) * | 1950-06-09 | 1954-06-01 | Int Standard Electric Corp | Crystal diode and triode |
| US2705767A (en) * | 1952-11-18 | 1955-04-05 | Gen Electric | P-n junction transistor |
| US2935781A (en) * | 1955-12-01 | 1960-05-10 | Bell Telephone Labor Inc | Manufacture of germanium translators |
| NL125999C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1958-07-17 | |||
| NL241982A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1958-08-13 | 1900-01-01 | ||
| NL122120C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1959-06-30 | |||
| US3056100A (en) * | 1959-12-04 | 1962-09-25 | Bell Telephone Labor Inc | Temperature compensated field effect resistor |
| US3147152A (en) * | 1960-01-28 | 1964-09-01 | Western Electric Co | Diffusion control in semiconductive bodies |
| DE1295089B (de) * | 1960-12-23 | 1969-05-14 | Philips Patentverwaltung | Verfahren zum Herstellen einer Halbleiteranordnung, insbesondere eines Transistors |
-
0
- DE DENDAT1252809D patent/DE1252809B/de active Pending
- NL NL301451D patent/NL301451A/xx unknown
-
1962
- 1962-12-17 US US245041A patent/US3337779A/en not_active Expired - Lifetime
-
1963
- 1963-11-25 GB GB46508/63A patent/GB996721A/en not_active Expired
- 1963-12-05 JP JP38065111A patent/JPS499266B1/ja active Pending
- 1963-12-10 SE SE13729/63A patent/SE301838B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB996721A (en) | 1965-06-30 |
| US3337779A (en) | 1967-08-22 |
| JPS499266B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-03-02 |
| NL301451A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | |
| SE301838B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1968-06-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1021891C2 (de) | Halbleiterdiode fuer Schaltstromkreise | |
| DE966492C (de) | Elektrisch steuerbares Schaltelement aus Halbleitermaterial | |
| DE3443854A1 (de) | Halbleiteranordnung | |
| DE2607940A1 (de) | Mehrschichtiges halbleiterbauelement | |
| DE1045548B (de) | Verfahren zur Herstellung eines elektrischen Halbleiterkristallgleichrichters mit negativen Widerstandseigenschaften, insbesondere zur Erzeugung von Schwingungen | |
| DE69117889T2 (de) | Verfahren zur Einführung und Diffundierung von Platin-Ionen in einem Siliziumplättchen | |
| DE3428067C2 (de) | Halbleiter-Überspannungsunterdrücker mit genau vorherbestimmbarer Einsatzspannung und Verfahren zur Herstellung desselben | |
| DE2546697A1 (de) | Verfahren zum elektrochemischen abscheiden eines materials auf einem halbleiterkoerper | |
| DE1162488B (de) | Halbleiterbauelement mit zwei Elektroden an einer Zone und Verfahren zum Betrieb | |
| DE1207502B (de) | Flaechenhaftes Halbleiterbauelement mit mindestens einem sperrenden pn-UEbergang und Verfahren zum Herstellen | |
| DE1213920B (de) | Halbleiterbauelement mit fuenf Zonen abwechselnden Leitfaehigkeitstyps | |
| DE1252809B (de) | Halbleiterdiode mit einem einkristallinen Halbleiterkörper und mit Rekombinationszentren in der n- und in der p-Zone und Verfahren zum Herstellen | |
| DE1150456B (de) | Esaki-Diode und Verfahren zu ihrer Herstellung | |
| EP0037005A1 (de) | Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial und Verfahren zu seiner Herstellung | |
| DE1489193B2 (de) | Verfahren zum herstellen einer halbleiteranordnung | |
| EP1095410B1 (de) | Halbleiteranordnung mit ohmscher kontaktierung und verfahren zur kontaktierung einer halbleiteranordnung | |
| DE69001016T2 (de) | Verfahren zur herstellung von wolfram-antimon ohmischen kontakten mit niedrigem widerstand auf iii-iv halbleitermaterialien. | |
| DE2551035C3 (de) | Logische Schaltung in Festkörpertechnik | |
| DE2527191A1 (de) | Thyristor | |
| DE1816009A1 (de) | Thyristor | |
| DE2320412C3 (de) | Verfahren zur Herstellung und Sortierung abschaltbarer Thyristoren | |
| DE1110765B (de) | Legierungstransistor zum Schalten mit einem scheibenfoermigen n- oder p-dotierten Halbleiterkoerper | |
| AT210476B (de) | Halbleitervorrichtung | |
| DE3937329B4 (de) | Halbleiter-Bauelement und seine Verwendung | |
| DE1464633B2 (de) | Doppelbasisdiode |