DE1250880B - Aus Feldeffekt-Transistoren aufgebau ter Koppelpunkt - Google Patents
Aus Feldeffekt-Transistoren aufgebau ter KoppelpunktInfo
- Publication number
- DE1250880B DE1250880B DE1965D0048678 DED0048678A DE1250880B DE 1250880 B DE1250880 B DE 1250880B DE 1965D0048678 DE1965D0048678 DE 1965D0048678 DE D0048678 A DED0048678 A DE D0048678A DE 1250880 B DE1250880 B DE 1250880B
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- grid
- effect transistor
- transistor
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims description 59
- 230000008878 coupling Effects 0.000 title claims description 19
- 238000010168 coupling process Methods 0.000 title claims description 19
- 238000005859 coupling reaction Methods 0.000 title claims description 19
- 230000000903 blocking effect Effects 0.000 claims description 18
- 238000006880 cross-coupling reaction Methods 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 3
- 230000002787 reinforcement Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/62—Two-way amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04Q—SELECTING
- H04Q3/00—Selecting arrangements
- H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
- H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
- H04Q3/521—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Electronic Switches (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1965D0048678 DE1250880B (de) | 1965-11-17 | 1965-11-17 | Aus Feldeffekt-Transistoren aufgebau ter Koppelpunkt |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1965D0048678 DE1250880B (de) | 1965-11-17 | 1965-11-17 | Aus Feldeffekt-Transistoren aufgebau ter Koppelpunkt |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1250880B true DE1250880B (de) | 1967-09-28 |
| DE1250880C2 DE1250880C2 (enrdf_load_stackoverflow) | 1968-04-04 |
Family
ID=604418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1965D0048678 Granted DE1250880B (de) | 1965-11-17 | 1965-11-17 | Aus Feldeffekt-Transistoren aufgebau ter Koppelpunkt |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1250880B (enrdf_load_stackoverflow) |
-
1965
- 1965-11-17 DE DE1965D0048678 patent/DE1250880B/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE1250880C2 (enrdf_load_stackoverflow) | 1968-04-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3407975C2 (de) | Normalerweise ausgeschaltete, Gate-gesteuerte, elektrische Schaltungsanordnung mit kleinem Einschaltwiderstand | |
| DE1018460B (de) | Elektrische Kippanordnung mit Kristalltrioden | |
| DE1238574B (de) | Steuerbares und schaltbares Halbleiterbauelement | |
| DE2112842B2 (de) | Schaltungsanordnung für einen Transistor-Gegentaktverstärker | |
| DE1100692B (de) | Bistabile Schaltung | |
| DE1088544B (de) | Schaltungsanordnung mit einem Koinzidenzgatter aus mehreren parallel geschalteten Gleichrichtern zur Ausuebung verschiedener logischer Funktionen | |
| DE1011924B (de) | Schaltungsanordnung fuer Schieberegister unter Verwendung von Transistoren | |
| DE2852200C2 (enrdf_load_stackoverflow) | ||
| EP0292913B1 (de) | Als integrierte Schaltung ausgebildete Schaltereinrichtung | |
| DE3019761C2 (de) | Schaltungsanordnung zum Zuführen von Signalen an eine Fernsprechleitung | |
| DE1190034B (de) | Elektronische Torschaltung | |
| DE2450891C3 (de) | Sprechwegschalter | |
| DE1250880B (de) | Aus Feldeffekt-Transistoren aufgebau ter Koppelpunkt | |
| DE3017566C2 (de) | Verstärker, insbesondere für eine Teilnehmerschaltung | |
| EP0048490B1 (de) | Schaltungsanordnung zum Umsetzen eines binären Eingangssignals in ein Telegrafiersignal | |
| DE2431523C3 (de) | Halbleiter-Sprechweg-Schaltanordnung | |
| DE3026361A1 (de) | Aus mindestens zwei monolitisch zusammengefassten mis-feldeffekttransistoren bestehender elektrischer widerstand fuer integrierte halbleiterschaltungen | |
| DE2539940C3 (de) | Schalter, insbesondere zur Verwendung in Drahtfunksystemen | |
| DE1249922B (de) | Schaltungsanordnung zum wahlweisen Durchschalten zweier je an einem Eingangsleitungszweig anliegender Wechselspannungen zu einem Ausgangsklemmenpaar | |
| DE1161950B (de) | Impulsschaltung mit Verzoegerungsleitung | |
| DE2132616A1 (de) | Tastschaltung fuer die abgabe von fernschreibzeichen mit konstantem ausgangsstrom | |
| DE1762246A1 (de) | Begrenzerschaltung | |
| DE1762246C (de) | Begrenzerschaltung | |
| DE2310243C3 (de) | Logische Schaltung | |
| DE1762547C3 (de) | Elektronischer Schalter für Zeitmultiplex-Nachrichtensysteme, insbesondere für Vermittlungsstellen |